Self-organization of quantum-dot pairs by high-temperature droplet epitaxy

  • Zhiming M. Wang1Email author,

    Affiliated with

    • Kyland Holmes1,

      Affiliated with

      • Yuriy I. Mazur1,

        Affiliated with

        • Kimberly A. Ramsey1 and

          Affiliated with

          • Gregory J. Salamo1

            Affiliated with

            Nanoscale Research Letters20061:57

            DOI: 10.1007/s11671-006-9002-z

            Published: 25 July 2006

            Abstract

            The spontaneously formation of epitaxial GaAs quantum-dot pairs was demonstrated on an AlGaAs surface using Ga droplets as a Ga nano-source. The dot pair formation was attributed to the anisotropy of surface diffusion during high-temperature droplet epitaxy.

            Keywords

            Quantum dots Droplet epitaxy
            http://static-content.springer.com/image/art%3A10.1007%2Fs11671-006-9002-z/MediaObjects/11671_2006_Article_9002_Equa_HTML.gif

            [120]

            Declarations

            Acknowledgments

            We thank Dr. John L. Shultz for his technical assistance regarding the MBE system.

            Authors’ Affiliations

            (1)
            Department of Physics, University of Arkansas

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            © to the authors 2006