Open Access

Guided self-assembly of lateral InAs/GaAs quantum-dot molecules for single molecule spectroscopy

  • L. Wang1,
  • A. Rastelli1Email author,
  • S. Kiravittaya1,
  • R. Songmuang1,
  • O.G. Schmidt1,
  • B. Krause2 and
  • T.H. Metzger2
Nanoscale Research Letters20061:74

DOI: 10.1007/s11671-006-9003-y

Published: 26 July 2006


We report on the growth and characterization of lateral InAs/GaAs (001) quantum-dot molecules (QDMs) suitable for single QDM optical spectroscopy. The QDMs, forming by depositing InAs on GaAs surfaces with self-assembled nanoholes, are aligned along the [ ] direction. The relative number of isolated single quantum dots (QDs) is substantially reduced by performing the growth on GaAs surfaces containing stepped mounds. Surface morphology and X-ray measurements suggest that the strain produced by InGaAs-filled nanoholes superimposed to the strain relaxation at the step edges are responsible for the improved QDM properties. QDMs are Ga-richer compared to single QDs, consistent with strain- enhanced intermixing. The high optical quality of single QDMs is probed by micro-photoluminescence spectroscopy in samples with QDM densities lower than 108 cm−2.


Lateral quantum-dot molecules Quantum dots Quantum dot composition Self-assembled growth




This work was financially supported by SFB/TR21 and BMBF (03N8711).

Authors’ Affiliations

Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1
European Synchrotron Radiation Facility


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© to the authors 2006