Open Access

Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices

  • V.G. Talalaev1, 2, 3Email author,
  • G.E. Cirlin1, 4,
  • A.A. Tonkikh1, 4,
  • N.D. Zakharov1,
  • P. Werner1,
  • U. Gösele1,
  • J.W. Tomm2 and
  • T. Elsaesser2
Nanoscale Research Letters20061:137

DOI: 10.1007/s11671-006-9004-x

Published: 1 August 2006

Abstract

The luminescence properties of highly strained, Sb-doped Ge/Si multi-layer heterostructures with incorporated Ge quantum dots (QDs) are studied. Calculations of the electronic band structure and luminescence measurements prove the existence of an electron miniband within the columns of the QDs. Miniband formation results in a conversion of the indirect to a quasi-direct excitons takes place. The optical transitions between electron states within the miniband and hole states within QDs are responsible for an intense luminescence in the 1.4–1.8 µm range, which is maintained up to room temperature. At 300 K, a light emitting diode based on such Ge/Si QD superlattices demonstrates an external quantum efficiency of 0.04% at a wavelength of 1.55 µm.

PACS

73.21.Cd 73.21.La 73.40.Gk 73.63.Kv 78.67.Hc 78.67.Pt

[194]

Declarations

Acknowledgments

We gratefully acknowledge helpful discussions with V. Kveder, D. Kovalev, G. Abstreiter and D. Grützmacher. We would like to thank A. Frommfeld for supporting the MBE growth and S. Schwirzke-Schaaf for contributions to Raman measurements. This work was supported by the EU project SANDiE (Network of Ecxellence, contract N. 500101). The Russian authors thank for support of the Russian Foundation of Basic Research (Grant N. 05-02-17780).

Authors’ Affiliations

(1)
Max-Planck-Institut für Mikrostrukturphysik
(2)
Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie
(3)
V.A. Fock Institute of Physics, St. Petersburg State University
(4)
Ioffe Physico-Technical Institute RAS

References

  1. Satpathy S, Martin RM, Van de Walle CG: Phys. Rev. B. 1988, 38: 13237. COI number [1:CAS:528:DyaL1MXht1Wlurg%3D] COI number [1:CAS:528:DyaL1MXht1Wlurg%3D] 10.1103/PhysRevB.38.13237View Article
  2. Turton RJ, Jaros M: Mat. Sci. Eng. B. 1990, 7: 37. 10.1016/0921-5107(90)90007-XView Article
  3. Zachai R, Eberl K, Abstreiter G, Kasper E, Kibbel H: Phys. Rev. Lett.. 1990, 64: 1055. COI number [1:CAS:528:DyaK3cXhsVyhtLw%3D] COI number [1:CAS:528:DyaK3cXhsVyhtLw%3D] 10.1103/PhysRevLett.64.1055View Article
  4. Presting H, Kibbel H, Jaros M, Turton RM, Menczigar U, Abstreiter G, Grimmeiss HG: Semicond. Sci. Technol.. 1992, 7: 1127. COI number [1:CAS:528:DyaK38XlvVSks7g%3D] COI number [1:CAS:528:DyaK38XlvVSks7g%3D] 10.1088/0268-1242/7/9/001View Article
  5. Ghosh S, Weber J, Presting H: Phys. Rev. B. 2000, 61: 15625. COI number [1:CAS:528:DC%2BD3cXktV2murg%3D] COI number [1:CAS:528:DC%2BD3cXktV2murg%3D] 10.1103/PhysRevB.61.15625View Article
  6. Fukatsu S, Akiyama H, Shiraki Y, Sakaki H: J. Cryst. Growth. 1995, 157: 1. COI number [1:CAS:528:DyaK28XovFyjuw%3D%3D] COI number [1:CAS:528:DyaK28XovFyjuw%3D%3D] 10.1016/0022-0248(95)00365-7View Article
  7. Dehlinger G, Diehl L, Gennser U, Sigg H, Faist J, Ensslin K, Grützmacher D, Müller E: Science. 2000, 290: 2277. COI number [1:CAS:528:DC%2BD3cXptFSnurk%3D] COI number [1:CAS:528:DC%2BD3cXptFSnurk%3D] 10.1126/science.290.5500.2277View Article
  8. Sunamura H, Fukatsu S, Usami N, Shiraki Y: J. Cryst. Growth. 1995, 157: 265. COI number [1:CAS:528:DyaK28XovFymtQ%3D%3D] COI number [1:CAS:528:DyaK28XovFymtQ%3D%3D] 10.1016/0022-0248(95)00324-XView Article
  9. Eberl K, Schmidt OG, Duschl R, Kienzle O, Ernst E, Rau Y: Thin Solid Films. 2000, 369: 33. COI number [1:CAS:528:DC%2BD3cXltVCqu7o%3D] COI number [1:CAS:528:DC%2BD3cXltVCqu7o%3D] 10.1016/S0040-6090(00)00830-0View Article
  10. Brunhes T, Boucaud P, Sauvage S, Lourtioz J-M, Hernandez C, Campidelli Y, Kermarrec O, Bensahel D, Faini G, Sagnes I: Appl. Phys. Lett.. 2000, 77: 1822. COI number [1:CAS:528:DC%2BD3cXmsV2qsb8%3D] COI number [1:CAS:528:DC%2BD3cXmsV2qsb8%3D] 10.1063/1.1308526View Article
  11. Vescan L, Chretien O, Stoica T, Mateeva E, Mück A: Mater. Sci. Semicond. Proc.. 2000, 3: 383. COI number [1:CAS:528:DC%2BD3MXhsVyjs78%3D] COI number [1:CAS:528:DC%2BD3MXhsVyjs78%3D] 10.1016/S1369-8001(00)00059-7View Article
  12. Stoffel M, Denker U, Schmidt OG: Appl. Phys. Lett.. 2003, 82: 3236. COI number [1:CAS:528:DC%2BD3sXjs1Gks7k%3D] COI number [1:CAS:528:DC%2BD3sXjs1Gks7k%3D] 10.1063/1.1572479View Article
  13. Chang W-H, Chou AT, Chen WY, Chang HS, Hsu TM, Pei Z, Chen PS, Lee SW, Lai LS, Lu SC, Tsai M-J: Appl. Phys. Lett.. 2003, 83: 2958. COI number [1:CAS:528:DC%2BD3sXnvVGntbw%3D] COI number [1:CAS:528:DC%2BD3sXnvVGntbw%3D] 10.1063/1.1616665View Article
  14. Rieger MM, Vogl P: Phys. Rev. B. 1993, 48: 14276. COI number [1:CAS:528:DyaK2cXos1ymtA%3D%3D] COI number [1:CAS:528:DyaK2cXos1ymtA%3D%3D] 10.1103/PhysRevB.48.14276View Article
  15. Yakimov AI, Stepina NP, Dvurechenskii AV, Nikiforov AI, Nenashev AV: Semicond. Sci. Technol.. 2000, 15: 1125. COI number [1:CAS:528:DC%2BD3MXot12q] COI number [1:CAS:528:DC%2BD3MXot12q] 10.1088/0268-1242/15/12/305View Article
  16. G. Cirlin, V. Egorov, V. Talalaev, P. Werner, N. Zakharov, USA Patent Application, No 10/723.285 (2003)
  17. Tan PH, Bougeard D, Abstreiter G, Brunner K: Appl. Phys. Lett.. 2004, 84: 2632. COI number [1:CAS:528:DC%2BD2cXivVaqtLo%3D] COI number [1:CAS:528:DC%2BD2cXivVaqtLo%3D] 10.1063/1.1691171View Article
  18. Schorer R, Abstreiter G, de Gironcoli S, Molinari E, Kibbel H, Presting H: Phys. Rev. B. 1994, 49: 5406. COI number [1:CAS:528:DyaK2cXisFKhtLc%3D] COI number [1:CAS:528:DyaK2cXisFKhtLc%3D] 10.1103/PhysRevB.49.5406View Article
  19. Milekhin AG, Nikiforov AI, Pchelyakov OP, Schulze S, Zahn DRT: JETP Lett.. 2001, 73: 461. COI number [1:CAS:528:DC%2BD3MXkslyntrs%3D] COI number [1:CAS:528:DC%2BD3MXkslyntrs%3D] 10.1134/1.1385658View Article
  20. Kwok SH, Yu PY, Tung CH, Zhang YH, Li MF, Peng CS, Zhou JM: Phys. Rev. B. 1999, 59: 4980. COI number [1:CAS:528:DyaK1MXhtVKnt7k%3D] COI number [1:CAS:528:DyaK1MXhtVKnt7k%3D] 10.1103/PhysRevB.59.4980View Article
  21. Liu JL, Jin G, Tang YS, Luo YH, Wang KL: Appl. Phys. Lett.. 2000, 76: 586. COI number [1:CAS:528:DC%2BD3cXnsVaktA%3D%3D] COI number [1:CAS:528:DC%2BD3cXnsVaktA%3D%3D] 10.1063/1.125825View Article
  22. Alonso VI, Winer K: Phys. Rev. B. 1989, 39: 10056. COI number [1:CAS:528:DyaL1MXks1Krtb8%3D] COI number [1:CAS:528:DyaL1MXks1Krtb8%3D] 10.1103/PhysRevB.39.10056View Article
  23. Schröter W, Cerva H: Solid State Phenom.. 2002, 85–86: 67.View Article
  24. Kveder VV, Steinman EA, Shevchenko SA, Grimmeiss HG: Phys. Rev. B. 1995, 51: 10520. COI number [1:CAS:528:DyaK2MXlsVSgt7o%3D] COI number [1:CAS:528:DyaK2MXlsVSgt7o%3D] 10.1103/PhysRevB.51.10520View Article
  25. Zakharov ND, Talalaev VG, Werner P, Tonkikh AA, Cirlin GE: Appl. Phys. Lett.. 2003, 83: 3084. COI number [1:CAS:528:DC%2BD3sXotVartbo%3D] COI number [1:CAS:528:DC%2BD3sXotVartbo%3D] 10.1063/1.1618377View Article
  26. Chang W-H, Chen W-Y, Chou A-T, Hsu T-M, Chen P-S, Pei Z, Lai L-S: J. Appl. Phys.. 2003, 93: 4999. COI number [1:CAS:528:DC%2BD3sXjtVyjs7k%3D] COI number [1:CAS:528:DC%2BD3sXjtVyjs7k%3D] 10.1063/1.1564883View Article
  27. Fukatsu S, Sunamura H, Shiraki Y, Komiyama S: Appl. Phys. Lett.. 1997, 71: 258. COI number [1:CAS:528:DyaK2sXksFOlu78%3D] COI number [1:CAS:528:DyaK2sXksFOlu78%3D] 10.1063/1.119514View Article
  28. Schittenhelm P, Engel C, Findeis F, Abstreiter G, Darhuber AA, Bauer G, Kosogov AO, Werner P: J. Vac. Sci. Technol. B. 1998, 16: 1575. COI number [1:CAS:528:DyaK1cXjsFKlu7w%3D] COI number [1:CAS:528:DyaK1cXjsFKlu7w%3D] 10.1116/1.589942View Article
  29. Schmidt OG, Kienzle O, Hao Y, Eberl K, Ernst F: Appl. Phys. Lett.. 1999, 74: 1272. COI number [1:CAS:528:DyaK1MXhtlektrw%3D] COI number [1:CAS:528:DyaK1MXhtlektrw%3D] 10.1063/1.123522View Article
  30. Vescan L: Mater. Sci. Eng. A. 2001, 302: 6. 10.1016/S0921-5093(00)01346-0View Article
  31. Loo R, Meunier-Beillard P, Vanhaeren D, Bender H, Caymax M, Vandervorst W, Dentel D, Goryll M, Vescan L: J. Appl. Phys.. 2001, 90: 2565. COI number [1:CAS:528:DC%2BD3MXmt1Wrsb8%3D] COI number [1:CAS:528:DC%2BD3MXmt1Wrsb8%3D] 10.1063/1.1389335View Article
  32. Novikov AV, Lobanov DN, Yablonsky AN, Drozdov YN, Vostokov NV, Krasilnik ZF: Physica E. 2003, 16: 467. COI number [1:CAS:528:DC%2BD3sXhs1egs70%3D] COI number [1:CAS:528:DC%2BD3sXhs1egs70%3D] 10.1016/S1386-9477(02)00658-6View Article
  33. Lubyshev DI, González-Borrero PP, Marega E, Petitprez E, La Scala N, Basmaji P: Appl. Phys. Lett.. 1996, 68: 205. COI number [1:CAS:528:DyaK28XivVGmsg%3D%3D] COI number [1:CAS:528:DyaK28XivVGmsg%3D%3D] 10.1063/1.116461View Article
  34. Lobo C, Leon R, Marcinkevicius S, Yang W, Sercel PC, Liao XZ, Zou J, Cockayne DJH: Phys. Rev. B. 1999, 60: 16647. COI number [1:CAS:528:DC%2BD3cXislKhtg%3D%3D] COI number [1:CAS:528:DC%2BD3cXislKhtg%3D%3D] 10.1103/PhysRevB.60.16647View Article
  35. Talalaev VG, Novikov BV, Smirnov MA, Kachkanov VV, Gobsch G, Goldhahn R, Winzer A, Cirlin GE, Egorov VA, Ustinov VM: Nanotechnology. 2002, 13: 143. COI number [1:CAS:528:DC%2BD38XktlGltLk%3D] COI number [1:CAS:528:DC%2BD38XktlGltLk%3D] 10.1088/0957-4484/13/2/303View Article
  36. Dvurechenskii AV, Yakimov AI: Semiconductors. 2001, 35: 1143. COI number [1:CAS:528:DC%2BD3MXmsFalu7w%3D] COI number [1:CAS:528:DC%2BD3MXmsFalu7w%3D] 10.1134/1.1403575View Article
  37. Wan J, Luo YH, Jiang ZM, Jin G, Liu JL, Wang KL, Liao XZ, Zou J: Appl. Phys. Lett.. 2001, 79: 1980. COI number [1:CAS:528:DC%2BD3MXntVWitbY%3D] COI number [1:CAS:528:DC%2BD3MXntVWitbY%3D] 10.1063/1.1405152View Article
  38. Kveder VV, Steinman EA, Shevchenko SA, Grimmeiss HG: Phys. Rev. B. 1995, 51: 10520. COI number [1:CAS:528:DyaK2MXlsVSgt7o%3D] COI number [1:CAS:528:DyaK2MXlsVSgt7o%3D] 10.1103/PhysRevB.51.10520View Article
  39. Schröter W, Cerva H: Solid State Phenom.. 2002, 85–86: 67. 10.4028/www.scientific.net/SSP.85-86.67View Article
  40. Discussion with V.V. Kveder and M. Seibt. Institute of Physics, Georg-August-University Güttingen, 25 November 2004
  41. Cirlin GE, Talalaev VG, Zakharov ND, Egorov VA, Werner P: . Phys. Stat. Sol. (b) 2002, 232: R1. COI number [1:CAS:528:DC%2BD38Xls1OisLo%3D] COI number [1:CAS:528:DC%2BD38Xls1OisLo%3D] 10.1002/1521-3951(200207)232:1<R1::AID-PSSB99991>3.0.CO;2-ZView Article
  42. G. Cirlin, A. Tonkikh, V. Talalaev, N. Zakharov, P. Werner, in Proceedings of SPIE, 5946 ‘‘Optical Materials and Applications’’, 266, 2005
  43. Talalaev VG, Cirlin GE, Tonkikh AA, Zakharov ND, Werner P: . Phys. Stat. Sol. (a) 2003, 198: R4. COI number [1:CAS:528:DC%2BD3sXmtlymtrk%3D] 10.1002/pssa.200309006View Article
  44. Vescan L, Stoica T, Chretien O, Goryll M, Mateeva E, Mück A: J. Appl. Phys.. 2000, 87: 7275. COI number [1:CAS:528:DC%2BD3cXivVOjsbo%3D] 10.1063/1.372980View Article
  45. Ong TC, Terrill KW, Tam S, Hu C: IEEE Elec. Dev. Lett.. 1983, 4: 460.View Article
  46. Sveinbjörnsson EÖ, Weber J: Appl. Phys. Lett.. 1996, 69: 2686. 10.1063/1.117678View Article
  47. Kveder V, Badylevich M, Steinman E, Izotov A, Seibt M, Schröter W: Appl. Phys. Lett.. 2004, 84: 2106. COI number [1:CAS:528:DC%2BD2cXitlKktbY%3D] 10.1063/1.1689402View Article
  48. Peng CS, Huang Q, Cheng WQ, Zhou JM, Zhang YH, Sheng TT, Tung CH: Appl. Phys. Lett.. 1998, 72: 2541. COI number [1:CAS:528:DyaK1cXislyru70%3D] 10.1063/1.121412View Article
  49. Engvall J, Olajos J, Grimmeiss HG, Presting H, Kibbel H, Kasper E: Appl. Phys. Lett.. 1993, 63: 491. COI number [1:CAS:528:DyaK3sXls12ls7o%3D] 10.1063/1.110780View Article
  50. Presting H, Zinke T, Brux O, Gail M, Abstreiter G, Kibbel H, Jaros M: J. Cryst. Growth. 1995, 157: 15. COI number [1:CAS:528:DyaK28XovFyisw%3D%3D] 10.1016/0022-0248(95)00367-3View Article
  51. Kasper E: Surf. Sci.. 1986, 174: 630. COI number [1:CAS:528:DyaL28Xls1ansrw%3D] 10.1016/0039-6028(86)90484-XView Article
  52. Tonkikh AA, Talalaev VG, Zakharov ND, Cirlin GE, Ustinov VM, Werner P: Tech. Phys. Lett.. 2003, 29: 739. COI number [1:CAS:528:DC%2BD3sXnsVWmtb4%3D] 10.1134/1.1615551View Article
  53. Scmidt OG, Eberl K, Rau Y: Phys. Rev. B. 2000, 62: 16715. 10.1103/PhysRevB.62.16715View Article
  54. Egorov VA, Cirlin GE, Tonkikh AA, Talalaev VG, Makarov AG, Ledentsov NN, Ustinov VM, Zakharov ND, Werner P: Phys. Solid State. 2004, 46: 49. COI number [1:CAS:528:DC%2BD2cXitlOrsA%3D%3D] 10.1134/1.1641919View Article
  55. Cirlin GE, Tonkikh AA, Ptitsyn VE, Dubrovskii VG, Masalov SA, Evtikhiev VP, Denisov DV, Ustinov VM, Werner P: Phys. Solid State. 2005, 47: 58. COI number [1:CAS:528:DC%2BD2MXhsVyls7s%3D] 10.1134/1.1853445View Article
  56. Guffarth F, Heitz R, Schliwa A, Pötschke K, Bimberg D: Physica E. 2004, 21: 326. COI number [1:CAS:528:DC%2BD2cXitlKjs7g%3D] 10.1016/j.physe.2003.11.045View Article
  57. Grahn H.T. (Ed): Semiconductor Superlattices, Growth and Electronic Properties. World Scientific, Singapore; 1995.
  58. Sibille A, Minot C, Laruelle F: Int. J. Mod. Phys. B. 2000, 14: 909. COI number [1:CAS:528:DC%2BD3cXlsleiu7w%3D]
  59. Wacker A: Phys. Rep.. 2002, 357: 1. COI number [1:CAS:528:DC%2BD3MXosFGgsb4%3D] 10.1016/S0370-1573(01)00029-1View Article
  60. Esaki L, Tsu R: IBM J. Res. Dev.. 1970, 14: 61. COI number [1:CAS:528:DyaE3cXnt1aitw%3D%3D] 10.1147/rd.141.0061View Article
  61. Kazarinov RF, Suris RA: Semiconductors. 1972, 6: 120.
  62. Tsu R, Esaki L: Appl. Phys. Lett.. 1973, 22: 562. COI number [1:CAS:528:DyaE3sXltF2nu7o%3D] 10.1063/1.1654509View Article
  63. Tsu R, Döhler G: Phys. Rev. B. 1975, 12: 680. 10.1103/PhysRevB.12.680View Article
  64. Chang LL, Esaki L, Tsu R: Appl. Phys. Lett.. 1974, 24: 593. COI number [1:CAS:528:DyaE2cXksVaqtrw%3D] 10.1063/1.1655067View Article
  65. Esaki L, Chang LL: Phys. Rev. Lett.. 1974, 33: 495. COI number [1:CAS:528:DyaE2cXlsValsbs%3D] 10.1103/PhysRevLett.33.495View Article
  66. Colocci M, Vinattieri A, Lippi L, Bogani F, Rosa-Clot M, Taddei S, Bosacchi A, Franchi S, Frigeri P: Appl. Phys. Lett.. 1999, 74: 564. COI number [1:CAS:528:DyaK1MXltlGjtQ%3D%3D] 10.1063/1.123146View Article
  67. Solomon GS, Trezza JA, Marshall AF, Harris JS: Phys. Rev. Lett.. 1996, 76: 952. COI number [1:CAS:528:DyaK28Xotl2htw%3D%3D] 10.1103/PhysRevLett.76.952View Article
  68. Ilahi B, Sfaxi L, Hassen F, Bouzaiene L, Maaref H, Salem B, Bremond G, Marty O: Phys. Stat. Sol. (a). 2003, 199: 457. COI number [1:CAS:528:DC%2BD3sXovFCnsbc%3D] 10.1002/pssa.200306681View Article
  69. Liu BL, Xu ZY, Liu HY, Wang ZG: J. Cryst. Growth. 2000, 220: 51. COI number [1:CAS:528:DC%2BD3cXnvVCltb8%3D] 10.1016/S0022-0248(00)00770-3View Article
  70. Lan S, Akahane K, Jang K-Y, Kawamura T, Okada Y, Kawabe M, Nishimura T, Wada O: Jpn. J. Appl. Phys.. 1999, 38: 2934. COI number [1:CAS:528:DyaK1MXjs12qsbs%3D] 10.1143/JJAP.38.2934View Article
  71. Song HZ, Akahane K, Lan S, Xu HZ, Okada Y, Kawabe M: Phys. Rev. B. 2001, 64: 085303. COI number [1:CAS:528:DC%2BD3MXlvVegur0%3D] 10.1103/PhysRevB.64.085303View Article
  72. Lazarenkova OL, Balandin AA: J. Appl. Phys.. 2001, 89: 5509. COI number [1:CAS:528:DC%2BD3MXjt1eiurg%3D] 10.1063/1.1366662View Article
  73. Bao Y, Balandin AA, Liu JL, Liu J, Xie YH: Appl. Phys. Lett.. 2004, 84: 3355. COI number [1:CAS:528:DC%2BD2cXjsVKlsbc%3D] 10.1063/1.1713049View Article
  74. Perales Á, Bonilla LL, Escobedo R: Nanotechnology. 2004, 15: S229. COI number [1:CAS:528:DC%2BD2cXmtlGkurk%3D] 10.1088/0957-4484/15/4/021View Article
  75. Kawashima K, Takata M, Fujiwara K, Kagawa T, Tadanaga O, Iwamura H: Microelectron. Eng.. 2000, 51–52: 143. 10.1016/S0167-9317(99)00463-3View Article
  76. Shimada Y, Sekine N, Hirakawa K: Physica E. 2004, 21: 661. COI number [1:CAS:528:DC%2BD2cXitlKjtbY%3D] 10.1016/j.physe.2003.11.099View Article
  77. Takagahara T: Surf. Sci.. 1992, 267: 310. COI number [1:CAS:528:DyaK38XisVCksrw%3D] 10.1016/0039-6028(92)91144-ZView Article
  78. N.V. Sibirev, V.G. Talalaev, A.A. Tonkikh, G.E. Cirlin, V.G. Dubrovskii, N.D. Zakharov, P. Werner, Semiconductors 40, 224 (2006)
  79. Grundmann M, Stier O, Bimberg D: Phys. Rev. B. 1995, 52: 11969. COI number [1:CAS:528:DyaK2MXptVSqtr0%3D] 10.1103/PhysRevB.52.11969View Article
  80. Wan J, Jin GL, Jiang ZM, Luo YH, Liu JL, Wang KL: Appl. Phys. Lett.. 2001, 78: 1763. COI number [1:CAS:528:DC%2BD3MXhvVyltbw%3D] 10.1063/1.1356454View Article
  81. Bremond G, Serpentini M, Souifi A, Guillot G, Jacquier B, Abdallah M, Berbezier I, Joyce B: Microelectron. J.. 1999, 30: 357. COI number [1:CAS:528:DyaK1MXjtFyqsL4%3D] 10.1016/S0026-2692(98)00135-9View Article
  82. Heitz R, Ledentsov NN, Bimberg D, Egorov AY, Maximov MV, Ustinov VM, Zhukov AE, Alferov ZhI, Cirlin GE, Soshnikov IP, Zakharov ND, Werner P, Gösele U: Appl. Phys. Lett.. 1999, 74: 1701. COI number [1:CAS:528:DyaK1MXhvV2ntL0%3D] 10.1063/1.123660View Article
  83. V.G. Talalaev, J.W. Tomm, A.S. Sokolov, I.V. Shtrom, B.V. Novikov, A. Winzer, R. Goldhahn, G. Gobsch, N.D. Zakharov, P. Werner, U. Go¨ sele, G.E. Cirlin, A.A. Tonkikh, V.M. Ustinov, G.G. Tarasov, J. Appl. Phys., 2006 (in press).
  84. Lenchyshyn LC, Thewalt MLW, Sturm JC, Xiao X: Phys. Rev. B. 1993, 47: 16659. COI number [1:CAS:528:DyaK3sXkvVansLc%3D] 10.1103/PhysRevB.47.16659View Article
  85. Leo K, Shah J, Göbel EO, Gordon JP, Schmitt-Rink S: Semicond. Sci. Technol.. 1992, 7: B394. COI number [1:CAS:528:DyaK38XitVGmsLk%3D] 10.1088/0268-1242/7/3B/103View Article
  86. Haacke S, Pelekanos NT, Mariette H, Zigone M, Heberle AP, Rühle WW: Phys. Rev. B. 1993, 47: 16643. COI number [1:CAS:528:DyaK3sXkvVansLk%3D] 10.1103/PhysRevB.47.16643View Article
  87. Mendez EE, Agulló-Rueda F, Hong JM: Phys. Rev. Lett.. 1988, 60: 2426. COI number [1:CAS:528:DyaL1cXkt12ntrg%3D] 10.1103/PhysRevLett.60.2426View Article
  88. Agulló-Rueda F, Mendez EE, Hong JM: Phys. Rev. B. 1989, 40: 1357. 10.1103/PhysRevB.40.1357View Article
  89. Bleuse J, Bastard G, Voisin P: Phys. Rev. Lett.. 1988, 60: 220. COI number [1:CAS:528:DyaL1cXosVCmtg%3D%3D] 10.1103/PhysRevLett.60.220View Article
  90. Yakimov AI, Adkins CJ, Boucher R, Dvurechenskii AV, Nikiforov AI, Pchelyakov OP, Biskupski G: Phys. Rev. B. 1999, 59: 12598. COI number [1:CAS:528:DyaK1MXjtVeltb0%3D] 10.1103/PhysRevB.59.12598View Article
  91. Yakimov AI, Dvurechenskii AV, Nikiforov AI, Adkins CJ: Phys. Stat. Sol. (b). 2000, 218: 99. COI number [1:CAS:528:DC%2BD3cXitFWksL8%3D] 10.1002/(SICI)1521-3951(200003)218:1<99::AID-PSSB99>3.0.CO;2-7View Article
  92. Rauch C, Strasser G, Unterrainer K, Boxleitner W, Gornik E, Wacker A: Phys. Rev. Lett.. 1998, 81: 3495. COI number [1:CAS:528:DyaK1cXmvVCisLg%3D] 10.1103/PhysRevLett.81.3495View Article
  93. Sibille A, Palmier JF, Hadjazi M, Wang H, Etemadi G, Dutisseuil E, Mollot F: Superlatt. Microstruct.. 1993, 13: 247. COI number [1:CAS:528:DyaK2cXkt12ksQ%3D%3D] 10.1006/spmi.1993.1049View Article
  94. Larsson M, Elfving A, Holtz P-O, Hansson GV, Ni W-X: Physica E.. 2003, 16: 476. COI number [1:CAS:528:DC%2BD3sXhs1egs7s%3D] 10.1016/S1386-9477(02)00652-5View Article

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