Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation

  • S. F. Yoon1Email author,

    Affiliated with

    • C. Y. Liu1,

      Affiliated with

      • Z. Z. Sun1 and

        Affiliated with

        • K. C. Yew1

          Affiliated with

          Nanoscale Research Letters20061:20

          DOI: 10.1007/s11671-006-9009-5

          Published: 26 July 2006


          Self-assembled GaInNAs quantum dots (QDs) were grown on GaAs (001) substrate using solid-source molecular-beam epitaxy (SSMBE) equipped with a radio-frequency nitrogen plasma source. The GaInNAs QD growth characteristics were extensively investigated using atomic-force microscopy (AFM), photoluminescence (PL), and transmission electron microscopy (TEM) measurements. Self-assembled GaInNAs/GaAsN single layer QD lasers grown using SSMBE have been fabricated and characterized. The laser worked under continuous wave (CW) operation at room temperature (RT) with emission wavelength of 1175.86 nm. Temperature-dependent measurements have been carried out on the GaInNAs QD lasers. The lowest obtained threshold current density in this work is ∼1.05 kA/cm2from a GaInNAs QD laser (50 × 1,700 µm2) at 10 °C. High-temperature operation up to 65 °C was demonstrated from an unbonded GaInNAs QD laser (50 × 1,060 µm2), with high characteristic temperature of 79.4 K in the temperature range of 10–60 °C.


          GaInNAs Quantum dot Laser diodes Molecular beam epitaxy (MBE)




          The authors are grateful to A*STAR for providing financial support in this research through the ONFIG-II program. TEM support from Tung Chih-Hang, Du An Yan and Doan My The of the Institute of Microelectronics, Singapore, as well as discussions with Prof. B.X. Bo of Changchun University of Science and Technology, Dr Mei Ting, Nie Dong, and Dr Tong Cunzhu of the School of Electrical and Electronic Engineering, Nanyang Technological University, is acknowledged.

          Authors’ Affiliations

          Compound Semiconductor and Quantum Information Group School of Electrical and Electronic Engineering, Nanyang Technological University


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          © to the authors 2006