Electronic structures of GaAs/Al x Ga1-x As quantum double rings

  • Shu-Shen Li1Email author and

    Affiliated with

    • Jian-Bai Xia1

      Affiliated with

      Nanoscale Research Letters20061:167

      DOI: 10.1007/s11671-006-9010-z

      Published: 11 August 2006

      Abstract

      In the framework of effective mass envelope function theory, the electronic structures of GaAs/Al x Ga1-x As quantum double rings (QDRs) are studied. Our model can be used to calculate the electronic structures of quantum wells, wires, dots, and the single ring. In calculations, the effects due to the different effective masses of electrons and holes in GaAs and Al x Ga1-x As and the valence band mixing are considered. The energy levels of electrons and holes are calculated for different shapes of QDRs. The calculated results are useful in designing and fabricating the interrelated photoelectric devices. The single electron states presented here are useful for the study of the electron correlations and the effects of magnetic fields in QDRs.

      Keywords

      Electronic structures GaAs Quantum double rings Nanostructures Effective-mass theory Band mixing 78.20.Bh 78.66.Fd

      [16]

      Declarations

      Acknowledgments

      This work was supported by the National Natural Science Foundation of China and the Special Foundations for State Major Basic Research Program of China (Grant No. G2001CB309500).

      Authors’ Affiliations

      (1)
      State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences

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      Copyright

      © to the authors 2006