Open Access

Site-controlled quantum dots fabricated using an atomic-force microscope assisted technique

  • HZ Song1Email author,
  • T Usuki1,
  • T Ohshima1,
  • Y Sakuma2,
  • M Kawabe2,
  • Y Okada3,
  • K Takemoto1,
  • T Miyazawa1,
  • S Hirose1,
  • Y Nakata1,
  • M Takatsu1 and
  • N Yokoyama1
Nanoscale Research Letters20061:160

DOI: 10.1007/s11671-006-9012-x

Published: 3 August 2006

Abstract

An atomic-force microscope assisted technique is developed to control the position and size of self-assembled semiconductor quantum dots (QDs). Presently, the site precision is as good as ± 1.5 nm and the size fluctuation is within ± 5% with the minimum controllable lateral diameter of 20 nm. With the ability of producing tightly packed and differently sized QDs, sophisticated QD arrays can be controllably fabricated for the application in quantum computing. The optical quality of such site-controlled QDs is found comparable to some conventionally self-assembled semiconductor QDs. The single dot photoluminescence of site-controlled InAs/InP QDs is studied in detail, presenting the prospect to utilize them in quantum communication as precisely controlled single photon emitters working at telecommunication bands.

Keywords

Quantum dot Site-Control Atomic-force microscope Local oxidation Quantum computer Quantum communication

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Authors’ Affiliations

(1)
Nanotechnology Research center, Fujitsu Lab. Ltd.
(2)
Nanomaterials Laboratory, National Institute for Materials Science (NIMS)
(3)
Institute of Applied Physics, University of Tsukuba

References

  1. Bimberg D, Grundmann M, Ledentsov NN: Quantum Dot Heterostructures. Widley, New York; 1999.Google Scholar
  2. Sakaki H: Jpn. J. Appl. Phys.. 1989, 28: L314. 10.1143/JJAP.28.L314View ArticleGoogle Scholar
  3. Takagahara T: Surf. Sci.. 1992, 267: 310. COI number [1:CAS:528:DyaK38XisVCksrw%3D] 10.1016/0039-6028(92)91144-ZView ArticleGoogle Scholar
  4. Song HZ, Akahane K, Lan S, Xu HZ, Okada Y, Kawabe M: Phys. Rev. B. 2001, 64: 085303. 10.1103/PhysRevB.64.085303View ArticleGoogle Scholar
  5. Bonadeo NH, Erland J, Gammon D, Park D, Katzer DS, Steel DG: Science. 1998, 282: 1473. COI number [1:CAS:528:DyaK1cXns1ymsro%3D] 10.1126/science.282.5393.1473View ArticleGoogle Scholar
  6. Besombes L, Baumberg JJ, Motohisa J: Phys. Rev. Lett.. 2003, 90: 257402. COI number [1:STN:280:DC%2BD3szivVGgtw%3D%3D] 10.1103/PhysRevLett.90.257402View ArticleGoogle Scholar
  7. Santori C, Fattal D, Vučković J, Solomon GS, Yamamoto Y: Nature. 2002, 419: 594. COI number [1:CAS:528:DC%2BD38Xns1Ont78%3D] 10.1038/nature01086View ArticleGoogle Scholar
  8. Yuan Z, Kardynal BE, Stevenson RM, Shields AJ, Lobo CJ, Cooper K, Beattie NS, Ritchie DA, Pepper M: Science. 2002, 295: 102. COI number [1:CAS:528:DC%2BD38XksVeruw%3D%3D] 10.1126/science.1066790View ArticleGoogle Scholar
  9. Loss D, DiVincenzo DP: Phys. Rev. A. 1998, 57: 120. COI number [1:CAS:528:DyaK1cXitlamug%3D%3D] 10.1103/PhysRevA.57.120View ArticleGoogle Scholar
  10. Ishikawa T, Nishimura T, Kohmoto S, Asakawa K: Appl. Phys. Lett.. 2000, 76: 167. COI number [1:CAS:528:DC%2BD3cXitFWrtg%3D%3D] 10.1063/1.125691View ArticleGoogle Scholar
  11. Lee H, Johnson JA, He MY, Speck JS, Petroff PM: Appl. Phys. Lett.. 2001, 78: 105. COI number [1:CAS:528:DC%2BD3MXmvVCm] 10.1063/1.1336554View ArticleGoogle Scholar
  12. Chithrani D, Williams RL, Lefebvre J, Poole PJ, Aers GC: Appl. Phys. Lett.. 2004, 84: 978. COI number [1:CAS:528:DC%2BD2cXhtVGms7Y%3D] 10.1063/1.1646455View ArticleGoogle Scholar
  13. H.Z. Song, T. Ohshima, Y. Okada, K. Akahane, T. Miyazawa, M. Kawabe, N. Yokoyama in Proceedings of the 26th ICPS, Edinburgh, 29 July- 2 August 2002, P.32
  14. Keyser UF, Schumacher HW, Zeitler U, Haug RJ, Zberl K: Appl. Phys. Lett.. 2000, 76: 457. COI number [1:CAS:528:DC%2BD3cXlvVaqtQ%3D%3D] 10.1063/1.125786View ArticleGoogle Scholar
  15. Song HZ, Nakata Y, Okada Y, Miyazawa T, Ohshima T, Takatsu M, Kawabe M, Yokoyama N: Phys. E. 2004, 21: 625. COI number [1:CAS:528:DC%2BD2cXitlKjtb8%3D] 10.1016/j.physe.2003.11.092View ArticleGoogle Scholar
  16. Song HZ, Usuki T, Hirose S, Takemoto K, Nakata Y, Yokoyama N, Sakuma Y: Appl. Phys. Lett.. 2005, 86: 113118. 10.1063/1.1887826View ArticleGoogle Scholar
  17. Hirai A, Itoh KM: Physica E. 2004, 23: 248. COI number [1:CAS:528:DC%2BD2cXlvFCrtbs%3D] 10.1016/j.physe.2003.12.130View ArticleGoogle Scholar
  18. Okada Y, Iuchi Y, Kawabe M, Harris JS: J. Appl. Phys.. 2000, 88: 1136. COI number [1:CAS:528:DC%2BD3cXksV2itb8%3D] 10.1063/1.373788View ArticleGoogle Scholar
  19. Wang ZhM, Mazur YI, Seydmohamadi Sh, Salamo GJ, Kissel H: Appl. Phys. Lett.. 2005, 87: 213105. 10.1063/1.2131198View ArticleGoogle Scholar
  20. Song HZ, Lan S, Akahane K, Jang KY, Okada Y, Kawabe M: Solid State Communications. 2000, 115: 195. COI number [1:CAS:528:DC%2BD3cXkt1artLw%3D] 10.1016/S0038-1098(00)00153-8View ArticleGoogle Scholar
  21. Huffaker DL, Deppe DG: Appl. Phys. Lett.. 1998, 73: 366. COI number [1:CAS:528:DyaK1cXks12isLo%3D] 10.1063/1.121836View ArticleGoogle Scholar
  22. Ohshima T, Song HZ, Okada Y, Akahane K, Miyazawa T, Kawabe M, Yokoyama N: Phys. Stat. Sol. (c). 2003, 4: 1364. 10.1002/pssc.200303096View ArticleGoogle Scholar
  23. Ohshima T: Phy. Rev. A. 2000, 62: 062316. 10.1103/PhysRevA.62.062316View ArticleGoogle Scholar
  24. Takemoto K, Sakuma Y, Hirose S, Usuki T, Yokoyama N: Jpn. J. Appl. Phys. (part B). 2004, 43: L349. COI number [1:CAS:528:DC%2BD2cXivFaru7s%3D] 10.1143/JJAP.43.L349View ArticleGoogle Scholar
  25. Takemoto K, Sakuma Y, Hirose S, Usuki T, Yokoyama N, Miyazawa T, Takatsu M, Arakawa Y: Jpn J. Appl. Phys. (part B). 2004, 43: L993. COI number [1:CAS:528:DC%2BD2cXmtlGjtbY%3D] 10.1143/JJAP.43.L993View ArticleGoogle Scholar
  26. Panranthoen C, Bertru N, Dehaese O, LeCorre A, Loualiche S, Lambert B, Patriarche G: Appl. Phys. Lett.. 2001, 78: 1751. 10.1063/1.1356449View ArticleGoogle Scholar
  27. Raymond S, Studenikin S, Cheng SJ, Pioro-Ladrière M, Ciorga M, Poole PJ, Robertson MD: Semicond. Sci. Technol.. 2003, 18: 385. COI number [1:CAS:528:DC%2BD3sXjtl2gtLY%3D] 10.1088/0268-1242/18/4/332View ArticleGoogle Scholar
  28. Sakuma Y, Takemoto K, Hirose S, Usuki T, Yokoyama N: Physica E. 2005, 26: 81. COI number [1:CAS:528:DC%2BD2MXht1Ontrs%3D] 10.1016/j.physe.2004.08.028View ArticleGoogle Scholar
  29. Sakuma Y, Takeguchi M, Takemoto K, Hirose S, Usuki T, Yokoyama N: J. Vac. Sci. Technol. B. 2005, 23: 1741. COI number [1:CAS:528:DC%2BD2MXntFSjs7c%3D] 10.1116/1.1949216View ArticleGoogle Scholar
  30. Yokoi T, Adachi S, Sasakura H, Muto S, Song HZ, Usuki T, Hirose S: Phys. Rev. B. 2005, 71: 041307R. 10.1103/PhysRevB.71.041307View ArticleGoogle Scholar
  31. Feng W, Wang Y, Wang J, Ge WK, Huang Q, Zhou JM: Appl. Phys. Lett.. 1998, 72: 1463. COI number [1:CAS:528:DyaK1cXhsl2rs7o%3D] 10.1063/1.120593View ArticleGoogle Scholar
  32. Karlsson KF, Moskalenko ES, Holtz PO, Monemar B, Schoenfled WV, Garcia JM, Petroff PM: Appl. Phys. Lett.. 2001, 78: 2952. COI number [1:CAS:528:DC%2BD3MXjt1ejtb4%3D] 10.1063/1.1370547View ArticleGoogle Scholar
  33. Ignatiev VI, Kozin EI, Nair SV, Ren HW, Sugou S, Masumoto Y: Phys. Rev. B. 2000, 61: 15633. COI number [1:CAS:528:DC%2BD3cXktV2murY%3D] 10.1103/PhysRevB.61.15633View ArticleGoogle Scholar
  34. Pepper M: J. Phys. C. 1980, 13: L709. COI number [1:CAS:528:DyaL3MXhtVeksQ%3D%3D] 10.1088/0022-3719/13/26/004View ArticleGoogle Scholar
  35. Kimura S, Kumano H, Endo M, Suemune I, Yokoi T, Sasakura H, Adachi S, Muto S, Song HZ, Hirose S, Usuki T: Jpn. J. Appl. Phys.. 2005, 44: L793. COI number [1:CAS:528:DC%2BD2MXmvVemsbg%3D] 10.1143/JJAP.44.L793View ArticleGoogle Scholar

Copyright

© to the authors 2006