Open Access

Evolution of wetting layer in InAs/GaAs quantum dot system

Nanoscale Research Letters20061:79

DOI: 10.1007/s11671-006-9013-9

Published: 26 July 2006


For InAs/GaAs quantum dot system, the evolution of the wetting layer (WL) with the InAs deposition thickness has been studied by reflectance difference spectroscopy (RDS). Two transitions related to the heavy- and light-hole in the WL have been distinguished in RD spectra. Taking into account the strain and segregation effects, a model has been presented to deduce the InAs amount in the WL and the segregation coefficient of the indium atoms from the transition energies of heavy- and light-holes. The variation of the InAs amount in the WL and the segregation coefficient are found to rely closely on the growth modes. In addition, the huge dots also exhibits a strong effect on the evolution of the WL. The observed linear dependence of In segregation coefficient upon the InAs amount in the WL demonstrates that the segregation is enhanced by the strain in the WL.


Quantum dots Wetting layer Reflectance difference spectroscopy Segregation 78.67.Hc 68.65.Hb 73.21.Fg




The work was supported by the National Natural Science Foundation of China (Nos. 60390074 and 60576062).

Authors’ Affiliations

Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences


  1. Bimberg D, Grundmann M, Ledentsov NN: Quantum dot heterostructures. John Wiley & Sons Ltd., Chichester; 1999.Google Scholar
  2. S. Sanguinetti, M. Henini, M. Grassi Alessi et al., Phys. Rev. B 60, 8276 (1999); S. Sanguinetti, T. Mano, M. Oshima et al., Appl. Phys. Lett. 81, 3067 (2002)View ArticleGoogle Scholar
  3. Toda Y, Moriwaki O, Nishioka M, Arakawa Y: Phys. Rev. Lett.. 1999, 82: 4114. COI number [1:CAS:528:DyaK1MXjtF2gu7k%3D] 10.1103/PhysRevLett.82.4114View ArticleGoogle Scholar
  4. Deppe DG, Huffaker DL: Appl. Phys. Lett.. 2000, 77: 3325. COI number [1:CAS:528:DC%2BD3cXotFGktLk%3D] 10.1063/1.1328090View ArticleGoogle Scholar
  5. Melnik RVN, Willatzen M: Nanotechnology. 2004, 15: 1. COI number [1:CAS:528:DC%2BD2cXjtVWrsbk%3D] 10.1088/0957-4484/15/1/001View ArticleGoogle Scholar
  6. W. Rudno-RudziÒski, SJk G, Ryczko K, et al.: Appl. Phys. Lett.. 2005, 86: 101904. 10.1063/1.1881782View ArticleGoogle Scholar
  7. Shin B, Lita B, Goldman RS, Phillips JD, Bhattacharya PK: Appl. Phys. Lett.. 2002, 81: 1423. COI number [1:CAS:528:DC%2BD38XlvF2nt74%3D] 10.1063/1.1501760View ArticleGoogle Scholar
  8. Offermans P, Koenraad PM, Wolter JH, Pierz K, Roy M, Maksym PA: Physica E. 2005, 26: 236. COI number [1:CAS:528:DC%2BD2MXht1Ontbs%3D] 10.1016/j.physe.2004.08.104View ArticleGoogle Scholar
  9. Sobiesierskiy Z, Westwood DI, Matthai CC: J. Phys. Condens. Matter. 1998, 10: 1. 10.1088/0953-8984/10/1/005View ArticleGoogle Scholar
  10. Y.H. Chen, X.L. Ye, J.Z. Wang, Z.G. Wang, Z. Yang, Phys. Rev. B 66, 195321 (2002); X. Ye, Y.H. Chen, B. Xu, Z.G. Wang, Mater. Sci. Eng. B 91–92, 62 (2002)View ArticleGoogle Scholar
  11. Rosenauer A, Gerthsen D, Van Dyck D, et al.: Phys. Rev. B. 2001, 64: 245334. 10.1103/PhysRevB.64.245334View ArticleGoogle Scholar
  12. da Silva MJ, Quivy AA, González-Borrero PP, Marega E: J. Cryst. Growth. 2002, 236: 41. 10.1016/S0022-0248(01)02109-1View ArticleGoogle Scholar
  13. Herman MA, Sitter H: Molecular beam epitaxy: fundamental and current status. Springer-Verlag, Berlin, Heidelberg; 1989:32.View ArticleGoogle Scholar
  14. Daruka I, Barabási A: Phys. Rev. Lett.. 1997, 79: 3708. COI number [1:CAS:528:DyaK2sXntFGms7o%3D] 10.1103/PhysRevLett.79.3708View ArticleGoogle Scholar
  15. Zhao FA, Chen YH, Ye XL, et al.: J. Phys. Condens. Matter. 2004, 16: 7603. COI number [1:CAS:528:DC%2BD2cXhtVCjsb7M] 10.1088/0953-8984/16/43/004View ArticleGoogle Scholar
  16. Heitz R, Ramachandran TR, Kalburge A, et al.: Phys. Rev. Lett.. 1997, 78: 4071. COI number [1:CAS:528:DyaK2sXjsVelur8%3D] 10.1103/PhysRevLett.78.4071View ArticleGoogle Scholar
  17. Krzyzewski TJ, Joyce PB, Bell GR, Jones TS: Surf. Sci.. 2002, 517: 8. COI number [1:CAS:528:DC%2BD38XntVarsb4%3D] 10.1016/S0039-6028(02)02083-6View ArticleGoogle Scholar
  18. Patella F, Nufris S, Arciprete F, Fanfoni M, Placidi E, Sgarlata A, Balzarotti A: Phys. Rev. B. 2003, 67: 205308. 10.1103/PhysRevB.67.205308View ArticleGoogle Scholar
  19. Offermans P, Koenraad PM, Wolter JH, Pierz K, Roy M, Maksym PA: Physica E. 2005, 26: 236.COI number [1:CAS:528:DC%2BD2MXht1Ontbs%3D] 10.1016/j.physe.2004.08.104View ArticleGoogle Scholar
  20. Offermans P, Koenraad PM, R. Nötzel, Wolter JH, Pierz K: Appl. Phys. Lett.. 2005, 87: 111903. 10.1063/1.2042543View ArticleGoogle Scholar


© to the authors 2006