Evolution of wetting layer in InAs/GaAs quantum dot system

  • Y.H. Chen1Email author,

    Affiliated with

    • X.L. Ye1 and

      Affiliated with

      • Z.G. Wang1

        Affiliated with

        Nanoscale Research Letters20061:79

        DOI: 10.1007/s11671-006-9013-9

        Published: 26 July 2006


        For InAs/GaAs quantum dot system, the evolution of the wetting layer (WL) with the InAs deposition thickness has been studied by reflectance difference spectroscopy (RDS). Two transitions related to the heavy- and light-hole in the WL have been distinguished in RD spectra. Taking into account the strain and segregation effects, a model has been presented to deduce the InAs amount in the WL and the segregation coefficient of the indium atoms from the transition energies of heavy- and light-holes. The variation of the InAs amount in the WL and the segregation coefficient are found to rely closely on the growth modes. In addition, the huge dots also exhibits a strong effect on the evolution of the WL. The observed linear dependence of In segregation coefficient upon the InAs amount in the WL demonstrates that the segregation is enhanced by the strain in the WL.


        Quantum dots Wetting layer Reflectance difference spectroscopy Segregation 78.67.Hc 68.65.Hb 73.21.Fg




        The work was supported by the National Natural Science Foundation of China (Nos. 60390074 and 60576062).

        Authors’ Affiliations

        Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences


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        © to the authors 2006