Evolution of wetting layer in InAs/GaAs quantum dot system

  • Y.H. Chen1Email author,

    Affiliated with

    • X.L. Ye1 and

      Affiliated with

      • Z.G. Wang1

        Affiliated with

        Nanoscale Research Letters20061:79

        DOI: 10.1007/s11671-006-9013-9

        Published: 26 July 2006

        Abstract

        For InAs/GaAs quantum dot system, the evolution of the wetting layer (WL) with the InAs deposition thickness has been studied by reflectance difference spectroscopy (RDS). Two transitions related to the heavy- and light-hole in the WL have been distinguished in RD spectra. Taking into account the strain and segregation effects, a model has been presented to deduce the InAs amount in the WL and the segregation coefficient of the indium atoms from the transition energies of heavy- and light-holes. The variation of the InAs amount in the WL and the segregation coefficient are found to rely closely on the growth modes. In addition, the huge dots also exhibits a strong effect on the evolution of the WL. The observed linear dependence of In segregation coefficient upon the InAs amount in the WL demonstrates that the segregation is enhanced by the strain in the WL.

        Keywords

        Quantum dots Wetting layer Reflectance difference spectroscopy Segregation 78.67.Hc 68.65.Hb 73.21.Fg

        [120]

        Declarations

        Acknowledgment

        The work was supported by the National Natural Science Foundation of China (Nos. 60390074 and 60576062).

        Authors’ Affiliations

        (1)
        Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences

        References

        1. Bimberg D, Grundmann M, Ledentsov NN: Quantum dot heterostructures. John Wiley & Sons Ltd., Chichester; 1999.
        2. S. Sanguinetti, M. Henini, M. Grassi Alessi et al., Phys. Rev. B 60, 8276 (1999); S. Sanguinetti, T. Mano, M. Oshima et al., Appl. Phys. Lett. 81, 3067 (2002)View Article
        3. Toda Y, Moriwaki O, Nishioka M, Arakawa Y: Phys. Rev. Lett.. 1999, 82: 4114. COI number [1:CAS:528:DyaK1MXjtF2gu7k%3D] 10.1103/PhysRevLett.82.4114View Article
        4. Deppe DG, Huffaker DL: Appl. Phys. Lett.. 2000, 77: 3325. COI number [1:CAS:528:DC%2BD3cXotFGktLk%3D] 10.1063/1.1328090View Article
        5. Melnik RVN, Willatzen M: Nanotechnology. 2004, 15: 1. COI number [1:CAS:528:DC%2BD2cXjtVWrsbk%3D] 10.1088/0957-4484/15/1/001View Article
        6. W. Rudno-RudziÒski, SJk G, Ryczko K, et al.: Appl. Phys. Lett.. 2005, 86: 101904. 10.1063/1.1881782View Article
        7. Shin B, Lita B, Goldman RS, Phillips JD, Bhattacharya PK: Appl. Phys. Lett.. 2002, 81: 1423. COI number [1:CAS:528:DC%2BD38XlvF2nt74%3D] 10.1063/1.1501760View Article
        8. Offermans P, Koenraad PM, Wolter JH, Pierz K, Roy M, Maksym PA: Physica E. 2005, 26: 236. COI number [1:CAS:528:DC%2BD2MXht1Ontbs%3D] 10.1016/j.physe.2004.08.104View Article
        9. Sobiesierskiy Z, Westwood DI, Matthai CC: J. Phys. Condens. Matter. 1998, 10: 1. 10.1088/0953-8984/10/1/005View Article
        10. Y.H. Chen, X.L. Ye, J.Z. Wang, Z.G. Wang, Z. Yang, Phys. Rev. B 66, 195321 (2002); X. Ye, Y.H. Chen, B. Xu, Z.G. Wang, Mater. Sci. Eng. B 91–92, 62 (2002)View Article
        11. Rosenauer A, Gerthsen D, Van Dyck D, et al.: Phys. Rev. B. 2001, 64: 245334. 10.1103/PhysRevB.64.245334View Article
        12. da Silva MJ, Quivy AA, González-Borrero PP, Marega E: J. Cryst. Growth. 2002, 236: 41. 10.1016/S0022-0248(01)02109-1View Article
        13. Herman MA, Sitter H: Molecular beam epitaxy: fundamental and current status. Springer-Verlag, Berlin, Heidelberg; 1989:32.View Article
        14. Daruka I, Barabási A: Phys. Rev. Lett.. 1997, 79: 3708. COI number [1:CAS:528:DyaK2sXntFGms7o%3D] 10.1103/PhysRevLett.79.3708View Article
        15. Zhao FA, Chen YH, Ye XL, et al.: J. Phys. Condens. Matter. 2004, 16: 7603. COI number [1:CAS:528:DC%2BD2cXhtVCjsb7M] 10.1088/0953-8984/16/43/004View Article
        16. Heitz R, Ramachandran TR, Kalburge A, et al.: Phys. Rev. Lett.. 1997, 78: 4071. COI number [1:CAS:528:DyaK2sXjsVelur8%3D] 10.1103/PhysRevLett.78.4071View Article
        17. Krzyzewski TJ, Joyce PB, Bell GR, Jones TS: Surf. Sci.. 2002, 517: 8. COI number [1:CAS:528:DC%2BD38XntVarsb4%3D] 10.1016/S0039-6028(02)02083-6View Article
        18. Patella F, Nufris S, Arciprete F, Fanfoni M, Placidi E, Sgarlata A, Balzarotti A: Phys. Rev. B. 2003, 67: 205308. 10.1103/PhysRevB.67.205308View Article
        19. Offermans P, Koenraad PM, Wolter JH, Pierz K, Roy M, Maksym PA: Physica E. 2005, 26: 236.COI number [1:CAS:528:DC%2BD2MXht1Ontbs%3D] 10.1016/j.physe.2004.08.104View Article
        20. Offermans P, Koenraad PM, R. Nötzel, Wolter JH, Pierz K: Appl. Phys. Lett.. 2005, 87: 111903. 10.1063/1.2042543View Article

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        © to the authors 2006