Open Access

Multi-scale ordering of self-assembled InAs/GaAs(001) quantum dots

  • S Kiravittaya1Email author,
  • R Songmuang1,
  • A Rastelli1,
  • H Heidemeyer1 and
  • OG Schmidt1
Nanoscale Research Letters20061:1

DOI: 10.1007/s11671-006-9014-8

Published: 25 July 2006


Ordering phenomena related to the self-assembly of InAs quantum dots (QD) grown on GaAs(001) substrates are experimentally investigated on different length scales. On the shortest length-scale studied here, we examine the QD morphology and observe two types of QD shapes, i.e., pyramids and domes. Pyramids are elongated along the [110] directions and are bounded by {137} facets, while domes have a multi-facetted shape. By changing the growth rates, we are able to control the size and size homogeneity of freestanding QDs. QDs grown by using low growth rate are characterized by larger sizes and a narrower size distribution. The homogeneity of buried QDs is measured by photoluminescence spectroscopy and can be improved by low temperature overgrowth. The overgrowth induces the formation of nanostructures on the surface. The fabrication of self-assembled nanoholes, which are used as a template to induce short-range positioning of QDs, is also investigated. The growth of closely spaced QDs (QD molecules) containing 2–6 QDs per QD molecule is discussed. Finally, the long-range positioning of self-assembled QDs, which can be achieved by the growth on patterned substrates, is demonstrated. Lateral QD replication observed during growth of three-dimensional QD crystals is reported.


Self-assembly Semiconductor quantum dots Photoluminescence




The technical support of U. Waizmann, T. Reindl, and M. Riek is acknowledged. The authors would like to thank K. von Klitzing for continuous interest and support. This work was financially supported by the Bundesministerium für Bildung und Forschung (contract number: 03N8711).

Authors’ Affiliations

Max-Planck-Institut für Festkörperforschung


  1. Bimberg D, Grundmann M, Ledentsov NN: Quantum Dot Heterostructures. Wiley, Chichester; 1999.
  2. Masumoto Y, Takagahara T: Semiconductor Quantum Dots: Physics, Spectroscopy and Applications. Springer, Berlin Heidelberg; 2002.View Article
  3. Gérard JM, Sermage B, Gayral B, Legrand B, Costard E, Thierry-Mieg V: Phys. Rev. Lett.. 1998, 81: 1110. 10.1103/PhysRevLett.81.1110View Article
  4. Yoshie T, Scherer A, Hendrickson J, Khitrova G, Gibbs H. M, Rupper G, Ell C, Shchekin OB, Deppe DG: Nature. 2004, 432: 2000. 10.1038/nature03119View Article
  5. M. Sugawara, Semiconductors and Semimetals, vol. 60, ed. by R.K. Willardson, A.C. Beer (Academic Press, London 1999)
  6. Schmidt OG, Kiravittaya S, Nakamura Y, Heidemeyer H, Songmuang R, Müller C, Jin-Phillipp NY, Eberl K, Wawra H, Christiansen S, Gräbeldinger H, Schweizer H: Surf. Sci.. 2002, 514: 10. COI number [1:CAS:528:DC%2BD38Xls12gsLk%3D] COI number [1:CAS:528:DC%2BD38Xls12gsLk%3D] 10.1016/S0039-6028(02)01601-1View Article
  7. Shchukin VA, Bimberg D: Rev. Mod. Phy.. 1999, 71: 1125. COI number [1:CAS:528:DyaK1MXlvVaisbs%3D] COI number [1:CAS:528:DyaK1MXlvVaisbs%3D] 10.1103/RevModPhys.71.1125View Article
  8. Stangl J, Holý V, Bauer G: Rev. Mod. Phys.. 2004, 76: 725. COI number [1:CAS:528:DC%2BD2MXkslKqug%3D%3D] COI number [1:CAS:528:DC%2BD2MXkslKqug%3D%3D] 10.1103/RevModPhys.76.725View Article
  9. Márquez J, Geelhaar L, Jacobi K: Appl. Phys. Lett.. 2001, 78: 2309. 10.1063/1.1365101View Article
  10. Kaizu T, Yamaguchi K: Jpn. J. Appl. Phys.. 2003, 42: 4166. COI number [1:CAS:528:DC%2BD3sXlsVOis7k%3D] COI number [1:CAS:528:DC%2BD3sXlsVOis7k%3D] 10.1143/JJAP.42.4166View Article
  11. Ruvimov S, Werner P, Scheerschmidt K, Gösele U, Heydenreich J, Richter U, Ledentsov NN, Grundmann M, Bimberg D, Ustinov VM, Egorov AY, Kop’ev PS, Alferov ZhI: Phys. Rev. B. 1995, 51: 14766. COI number [1:CAS:528:DyaK2MXmtVKhs7o%3D] COI number [1:CAS:528:DyaK2MXmtVKhs7o%3D] 10.1103/PhysRevB.51.14766View Article
  12. Costantini G, Manzano C, Songmuang R, Schmidt OG, Kern K: Appl. Phys. Lett.. 2003, 82: 3194. COI number [1:CAS:528:DC%2BD3sXjs1Gksr0%3D] COI number [1:CAS:528:DC%2BD3sXjs1Gksr0%3D] 10.1063/1.1572534View Article
  13. Costantini G, Rastelli A, Manzano C, Songmuang R, Schmidt OG, Kern K, von Känel H: Appl. Phys. Lett.. 2004, 85: 5673. COI number [1:CAS:528:DC%2BD2cXhtVKqsLnO] COI number [1:CAS:528:DC%2BD2cXhtVKqsLnO] 10.1063/1.1829164View Article
  14. Costantini G, Rastelli A, Manzano C, Acosta-Diaz P, Katsaros G, Songmuang R, Schmidt OG, von Känel H, Kern K: J. Cryst. Growth. 2005, 278: 38. COI number [1:CAS:528:DC%2BD2MXjsVeltL4%3D] COI number [1:CAS:528:DC%2BD2MXjsVeltL4%3D] 10.1016/j.jcrysgro.2004.12.047View Article
  15. A. Rastelli, H. von Ka¨ nel, Surf. Sci. 532–535, 769 (2003)
  16. Mukhametzhanov I, Wei Z, Heitz R, Madhukar A: Appl. Phys. Lett.. 1999, 75: 85. COI number [1:CAS:528:DyaK1MXktVSit78%3D] COI number [1:CAS:528:DyaK1MXktVSit78%3D] 10.1063/1.124284View Article
  17. Medeiros-Ribeiro G, Bratkovski AM, Kamins TI, Ohlberg DAA, Williams RS: Science. 1998, 279: 353. COI number [1:CAS:528:DyaK1cXmtlOiuw%3D%3D] COI number [1:CAS:528:DyaK1cXmtlOiuw%3D%3D] 10.1126/science.279.5349.353View Article
  18. Leonard D, Krishnamurthy M, Reaves CM, Denbaars SP, Petroff PM: Appl. Phys. Lett.. 1993, 63: 3203. COI number [1:CAS:528:DyaK2cXht1WrtbY%3D] COI number [1:CAS:528:DyaK2cXht1WrtbY%3D] 10.1063/1.110199View Article
  19. Songmuang R, Kiravittaya S, Sawadsaringkarn M, Panyakeow S, Schmidt OG: J. Cryst. Growth. 2003, 251: 166. COI number [1:CAS:528:DC%2BD3sXitlWmu7c%3D] COI number [1:CAS:528:DC%2BD3sXitlWmu7c%3D] 10.1016/S0022-0248(02)02474-0View Article
  20. Nakata Y, Mukai K, Sugawara M, Ohtsubo K, Ishikawa H, Yokoyama N: J. Cryst. Growth. 2000, 208: 93. COI number [1:CAS:528:DyaK1MXotVKls78%3D] COI number [1:CAS:528:DyaK1MXotVKls78%3D] 10.1016/S0022-0248(99)00466-2View Article
  21. Chen Y, Washburn J: Phys. Rev. Lett.. 1996, 77: 4046. COI number [1:CAS:528:DyaK28XmvVKiurw%3D] COI number [1:CAS:528:DyaK28XmvVKiurw%3D] 10.1103/PhysRevLett.77.4046View Article
  22. Kiravittaya S, Nakamura Y, Schmidt OG: Physica E. 2002, 13: 224. COI number [1:CAS:528:DC%2BD38XksFOitLc%3D] COI number [1:CAS:528:DC%2BD38XksFOitLc%3D] 10.1016/S1386-9477(01)00525-2View Article
  23. Songmuang R, Kiravittaya S, Schmidt OG: J. Cryst. Growth. 2003, 249: 416. COI number [1:CAS:528:DC%2BD3sXpsFSnsg%3D%3D] COI number [1:CAS:528:DC%2BD3sXpsFSnsg%3D%3D] 10.1016/S0022-0248(02)02222-4View Article
  24. Rastelli A, Müller E, von Känel H: Appl. Phys. Lett.. 2002, 80: 1438. COI number [1:CAS:528:DC%2BD38XhsVCntbs%3D] COI number [1:CAS:528:DC%2BD38XhsVCntbs%3D] 10.1063/1.1453476View Article
  25. Nishi K, Saito H, Sugou S, Lee J-S: Appl. Phys. Lett.. 1999, 74: 1111. COI number [1:CAS:528:DyaK1MXhtF2ht7Y%3D] COI number [1:CAS:528:DyaK1MXhtF2ht7Y%3D] 10.1063/1.123459View Article
  26. Shiraishi K: Appl. Phys. Lett.. 1992, 60: 1363. COI number [1:CAS:528:DyaK38XhvVWqu7g%3D] COI number [1:CAS:528:DyaK38XhvVWqu7g%3D] 10.1063/1.107292View Article
  27. Xie Q, Chen P, Madhukar A: Appl. Phys. Lett.. 1994, 65: 2051. COI number [1:CAS:528:DyaK2cXntFejurc%3D] COI number [1:CAS:528:DyaK2cXntFejurc%3D] 10.1063/1.112790View Article
  28. Burkard G, Seelig G, Loss D: Phys. Rev. B. 2000, 62: 1581. 10.1103/PhysRevB.62.2581View Article
  29. Stievater TH, Li X, Steel DG, Gammon D, Katzer DS, Park D, Piermarocchi C, Sham LJ: Phys. Rev. Lett.. 2001, 87: 133603. COI number [1:STN:280:DC%2BD3MrjtlOrug%3D%3D] COI number [1:STN:280:DC%2BD3MrjtlOrug%3D%3D] 10.1103/PhysRevLett.87.133603View Article
  30. Zrenner A, Beham E, Stufler S, Findeis F, Bichler M, Abstreiter G: Nature. 2002, 418: 612. COI number [1:CAS:528:DC%2BD38XlvVyltL4%3D] COI number [1:CAS:528:DC%2BD38XlvVyltL4%3D] 10.1038/nature00912View Article
  31. Li X, Wu Y, Steel D, Gammon D, Stievater TH, Katzer DS, Park D, Piermarocchi C, Sham LJ: Science. 2003, 301: 809. COI number [1:CAS:528:DC%2BD3sXmtVGqsrc%3D] COI number [1:CAS:528:DC%2BD3sXmtVGqsrc%3D] 10.1126/science.1083800View Article
  32. Xie Q, Madhukar A, Chen P, Kobayashi NP: Phys. Rev. Lett.. 1995, 75: 2542. COI number [1:CAS:528:DyaK2MXot1Oht7Y%3D] COI number [1:CAS:528:DyaK2MXot1Oht7Y%3D] 10.1103/PhysRevLett.75.2542View Article
  33. Schuler H, Jin-Phillipp NY, Phillipp F, Eberl K: Semicond. Sci. Technol.. 1998, 13: 1341. COI number [1:CAS:528:DyaK1cXnsVWjsbw%3D] COI number [1:CAS:528:DyaK1cXnsVWjsbw%3D] 10.1088/0268-1242/13/11/001View Article
  34. Kiravittaya S, Songmuang R, Schmidt OG: J. Cryst. Growth. 2003, 251: 258. COI number [1:CAS:528:DC%2BD3sXitlWls7g%3D] COI number [1:CAS:528:DC%2BD3sXitlWls7g%3D] 10.1016/S0022-0248(02)02475-2View Article
  35. L. Wang, A. Rastelli, S. Kiravittaya, R. Songmuang, O.G. Schmidt, B. Krause, T.H. Metzger, Nanoscale Res. Lett.(in press)
  36. Penev E, Stojković S, Kratzer P, Scheffler M: Phys. Rev. B. 2004, 69: 115335. 10.1103/PhysRevB.69.115335View Article
  37. Schmidt OG, Deneke Ch, Kiravittaya S, Songmuang R, Heidemeyer H, Nakamura Y, Zapf-Gottwick R, Müller C, Jin-Phillipp NY: IEEE J. Sel. Top. Quantum Electron.. 2002, 8: 1025. COI number [1:CAS:528:DC%2BD38XpsVOgtb0%3D] COI number [1:CAS:528:DC%2BD38XpsVOgtb0%3D] 10.1109/JSTQE.2002.804235View Article
  38. Songmuang R, Kiravittaya S, Schmidt OG: Appl. Phys. Lett.. 2003, 82: 2892. COI number [1:CAS:528:DC%2BD3sXjtlSisrw%3D] COI number [1:CAS:528:DC%2BD3sXjtlSisrw%3D] 10.1063/1.1569992View Article
  39. Kiravittya S, Heidemeyer H, Schmidt OG: Physica E. 2004, 23: 253. 10.1016/j.physe.2003.10.013View Article
  40. Heidemeyer H, Müller C, Schmidt OG: J. Cryst. Growth. 2004, 261: 444. COI number [1:CAS:528:DC%2BD2cXisFOrtw%3D%3D] COI number [1:CAS:528:DC%2BD2cXisFOrtw%3D%3D] 10.1016/j.jcrysgro.2003.09.030View Article
  41. Kiravittaya S, Schmidt OG: Appl. Phys. Lett.. 2005, 86: 206101. 10.1063/1.1925771View Article
  42. Kiravittaya S, Heidemeyer H, Schmidt OG: Appl. Phys. Lett.. 2005, 86: 263113. 10.1063/1.1954874View Article


© to the authors 2006