Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy

Henini, M.

doi:10.1007/s11671-006-9017-5

Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy

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Published: 26 July 2006

Volume 1, article number 32, (2006)
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Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy

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M. Henini¹

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Abstract

One of the main directions of contemporary semiconductor physics is the production and study of structures with a dimension less than two: quantum wires and quantum dots, in order to realize novel devices that make use of low-dimensional confinement effects. One of the promising fabrication methods is to use self-organized three-dimensional (3D) structures, such as 3D coherent islands, which are often formed during the initial stage of heteroepitaxial growth in lattice-mismatched systems. This article is intended to convey the flavour of the subject by focussing on the structural, optical and electronic properties and device applications of self-assembled quantum dots and to give an elementary introduction to some of the essential characteristics.

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Acknowledgments

This work is supported by the Engineering and Physical Sciences Research Council (U.K.) and the SANDiE Network of Excellence of the European Commission (Contract no. NMP4-CT-2004-500101). I am grateful to L. Eaves, A. Patane, A. Polimeni, P.C. Main, K. Takehana, F. Pulizzi, A. Levin, S. Sanguinetti, M. Guzzi, M.D. Upward, P. Moriarty, M. Al-Khafaji, A.G. Cullis, E.E. Vdovin, Yu.N. Khanin, Yu.V. Dubrovskii, G. Hill, D. Granados, J.M. Garcia, N.N. Ledenstov and D. Bimberg for their contribution to this work.

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Henini, M. Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy. Nanoscale Res Lett 1, 32 (2006). https://doi.org/10.1007/s11671-006-9017-5

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Published: 26 July 2006
DOI: https://doi.org/10.1007/s11671-006-9017-5

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Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy

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