Experimental investigation on the bi-directional growing mechanism of the foils laminate approach in AAO fabrication

  • Jen-Yi Fan1,

    Affiliated with

    • Ming-Chun Chien2 and

      Affiliated with

      • Gou-Jen Wang1Email author

        Affiliated with

        Nanoscale Research Letters20062:49

        DOI: 10.1007/s11671-006-9029-1

        Received: 4 August 2006

        Accepted: 23 October 2006

        Published: 28 November 2006


        The foils laminate approach can be implemented to grow bi-directional porous pattern from both the top and bottom surfaces of an aluminum foil. It was intuitively inferred that leakage of etchant from the clamped area can be a feasible cause to have the upward pores grow in the notches of the unpolished surface. This leakage hypothesis has been disproved by the leakage blocking and triple layers laminate experiments. It is further inferred that the non-uniformity of the thickness or material properties of the aluminum foil causes non-uniformed anodization rate along the sample surface. The fast oxidized areas create a pathway for leakage such that a shorter porous array from the back side is observed. Experiments with the process time being reduced by two hours validate this inference


        Anodic aluminum oxide Foils laminate approach Non-uniformed anodization




        The authors would like to express their gratitude to the reviewers for their valuable comments and suggestions. The authors also would like to thank the National Science Council of Taiwan, for financially supporting this work under Contract No. NSC-94–2212-E-005–010. The Center of Nanoscience and Nanotechnology at National Chung-Hsing University, Taiwan, is appreciated for use of its facilities.

        Authors’ Affiliations

        Department of Mechanical Engineering, National Chung-Hsing University
        Department of Electronic Engineering, Chung Chou Institute of Technology


        1. Hwang SK, Lee J, Jeong SH, Lee PS, Lee KH: Nanotechnology. 2005, 16: 850–858. COI number [1:CAS:528:DC%2BD2MXnsl2mtL0%3D] 10.1088/0957-4484/16/6/040View Article
        2. Yu WJ, Cho YS, Choi GS, Kim D: Nanotechnology. 2005, 16: S291-S295. COI number [1:CAS:528:DC%2BD2MXmt1CqtL4%3D] 10.1088/0957-4484/16/5/029View Article
        3. Yanagishita T, Nishio K, Masuda H: Adv. Mater.. 2005,17(18):2241–2243. COI number [1:CAS:528:DC%2BD2MXhtVKqsbvK] 10.1002/adma.200500249View Article
        4. Kim L, Yoon SM, Kim J, Suh JS: Synthetic Met.. 2004, 140: 135–138. COI number [1:CAS:528:DC%2BD2cXhsVOntbw%3D] 10.1016/S0379-6779(03)00351-5View Article
        5. Bae EJ, Choi WB, Jeong KS, Chu JU, Park GS, Song S, Yoo IK: Adv. Mater.. 2002,14(4):277–279. COI number [1:CAS:528:DC%2BD38XhvFKjs7w%3D] 10.1002/1521-4095(20020219)14:4<277::AID-ADMA277>3.0.CO;2-AView Article
        6. Li AP, Miller F, Birner A, Nielsch K, Gösele U: Adv. Mater.. 1999,11(6):483–486. COI number [1:CAS:528:DyaK1MXjtFejsbg%3D] 10.1002/(SICI)1521-4095(199904)11:6<483::AID-ADMA483>3.0.CO;2-IView Article
        7. Krishnan R, Nguyen HQ, Thompson CV, Choi WK, Foo YL: Nanotechnology. 2005, 16: 841–845. COI number [1:CAS:528:DC%2BD2MXnsl2mt7c%3D] 10.1088/0957-4484/16/6/038View Article
        8. Jeong SH, Lee KH: Synthetic Met.. 2003, 139: 385–390. COI number [1:CAS:528:DC%2BD3sXlsl2iurw%3D] 10.1016/S0379-6779(03)00187-5View Article
        9. Yan J, Rao GV, Barela M, Brevnov DA, Jiang Y, Xu H, Lopez GP, Atanassov PB: Adv. Mater.. 2003,15(23):2015–2018. COI number [1:CAS:528:DC%2BD3sXhtVWgt77F] 10.1002/adma.200305360View Article
        10. Sun Z, Kim HK: Appl. Phys. Lett.. 2002,81(18):3458–3460. COI number [1:CAS:528:DC%2BD38Xot1Sls78%3D] 10.1063/1.1517719View Article
        11. Wang GJ, Peng CS: J. Nanosci. Nanotechnol.. 2006,6(4):1004–1008. COI number [1:CAS:528:DC%2BD28XksV2jtb4%3D] 10.1166/jnn.2006.148View Article


        © to the authors 2006