Electrically tunable solid-state silicon nanopore ion filter

  • Julien Vidal1, 2,

    Affiliated with

    • Maria E. Gracheva2 and

      Affiliated with

      • Jean-Pierre Leburton1, 2Email author

        Affiliated with

        Nanoscale Research Letters20062:61

        DOI: 10.1007/s11671-006-9031-7

        Received: 27 September 2006

        Accepted: 8 November 2006

        Published: 19 December 2006

        Abstract

        We show that a nanopore in a silicon membrane connected to a voltage source can be used as an electrically tunable ion filter. By applying a voltage between the heavily doped semiconductor and the electrolyte, it is possible to invert the ion population inside the nanopore and vary the conductance for both cations and anions in order to achieve selective conduction of ions even in the presence of significant surface charges in the membrane. Our model based on the solution of the Poisson equation and linear transport theory indicates that in narrow nanopores substantial gain can be achieved by controlling electrically the width of the charge double layer.

        Keywords

        Ion channels Artificial nanopore Silicon materials Nanofluidics

        [122]

        Declarations

        Acknowledgements

        This work was supported by the NIRT-NSF Grant No. CCR 02-10843 and the NIH Grant PHS1-R01-HG003713A.

        Authors’ Affiliations

        (1)
        Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign
        (2)
        Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign

        References

        1. Hodgson AL, Huxley AF, Katz B: J. Physiol.. 1952, 116: 424.View Article
        2. Doyle DA, Cabral JM, Ofuetzner RA, Kuo A, Gulbis JM, Cohen SL, Chait BT, MacKinnon R: Science. 1998, 280: 69. COI number [1:CAS:528:DyaK1cXitlWksrY%3D] 10.1126/science.280.5360.69View Article
        3. Li J, Gershow M, Stein D, Brandin E, Golovchenko JA: Nat Mater. 2003, 2: 611. COI number [1:CAS:528:DC%2BD3sXmvVCrsb8%3D] 10.1038/nmat965View Article
        4. Ho C, Qiao R, Heng JB, Chatterjee A, Timp RJ, Aluru NR, Timp G: Proc. Natl. Acad. Sci.. 2005, 102: 10445. COI number [1:CAS:528:DC%2BD2MXntVSit7s%3D] 10.1073/pnas.0500796102View Article
        5. Heng JB, Ho C, Kim T, Timp R, Aksimentiev A, Grinkova YV, Sligar S, Sprosch T, Schulten K, Timp G: Biophys. J.. 2004, 87: 2905. COI number [1:CAS:528:DC%2BD2cXot12mtrc%3D] 10.1529/biophysj.104.041814View Article
        6. Gracheva ME, Xiong A, Leburton JP, Aksimentiev A, Schulten K, Timp G: Nanotechnology. 2006, 17: 622. COI number [1:CAS:528:DC%2BD28Xis1yhsrs%3D] 10.1088/0957-4484/17/3/002View Article
        7. Nishizawa M, Martin CR, Menon VP: Science. 1995, 268: 700. COI number [1:CAS:528:DyaK2MXlsVGisbk%3D] 10.1126/science.268.5211.700View Article
        8. Daiguji H, Oka Y, Shirono K: Nano Lett.. 2005, 5: 2274. COI number [1:CAS:528:DC%2BD2MXhtVGqsL%2FF] 10.1021/nl051646yView Article
        9. Fan R, Yue M, Karnik R, Majumdar A, Yang P: Phys. Rev. Lett.. 2005, 95: 086607. 10.1103/PhysRevLett.95.086607View Article
        10. Siwy ZS, Powell MR, Petrov A, Kalman E, Trautmann C, Eisenberg RS: Nano Lett.. 2006, 6: 1729. COI number [1:CAS:528:DC%2BD28XntVWrtr8%3D] 10.1021/nl061114xView Article
        11. Siwy ZS: Adv. Funct. Mater.. 2006, 16: 735. COI number [1:CAS:528:DC%2BD28XjvVCmurk%3D] 10.1002/adfm.200500471View Article
        12. Li H, Zheng Y, Akin D, Bashir R: J. Microelectromech. Syst.. 2005, 14: 103. COI number [1:CAS:528:DC%2BD2MXhtFWrsb3E] 10.1109/JMEMS.2004.839124View Article
        13. Kralj JG, Lis MTW, Schmidt MA, Jensen KF: Anal. Chem.. 2006, 78: 5019. COI number [1:CAS:528:DC%2BD28XlvFWnu7w%3D] 10.1021/ac0601314View Article
        14. Li J, Stein D, McMullan C, Branton D, Aziz MJ, Golovchenko JA: Nature. 2001, 412: 166. COI number [1:CAS:528:DC%2BD3MXlsFWms7o%3D] 10.1038/35084037View Article
        15. Stein D, Li J, Golovchenko JA: Phys. Rev. Lett.. 2002, 89: 276106. 10.1103/PhysRevLett.89.276106View Article
        16. Storm AJ, Chen JH, Ling XS, Zandbergen HW, Dekker C: Nat. Mater.. 2003, 8: 537. 10.1038/nmat941View Article
        17. Gardner CL, Nonner W, Eisenberg RS: J. Comput. Electron.. 2004, 3: 25. COI number [1:CAS:528:DC%2BD2cXntlOkurc%3D] 10.1023/B:JCEL.0000029453.09980.fbView Article
        18. S.M. Sze, Physics of Semiconductor Devices (Wiley-Interscience, 1981)
        19. R.S. Muller, T.I. Kamins, M. Chan, Device Electronics for Integrated Circuits (John Wiley and sons Inc., 2003)
        20. Zhou JD, Cui ST, Cochran HD: Mol. Phys.. 2003, 101: 1089. COI number [1:CAS:528:DC%2BD3sXjtlSms7k%3D] 10.1080/0026897031000068479View Article
        21. Lynden-Bell RM, Rasaiah J: J. Chem. Phys.. 1996, 105: 9266. COI number [1:CAS:528:DyaK28XntF2ns7g%3D] 10.1063/1.472757View Article
        22. Heng JB, Aksimentiev A, Ho C, Marks P, Grinkova YV, Sligar S, Schulten K, Timp G: Biophys. J.. 2006, 90: 1098. COI number [1:CAS:528:DC%2BD28XhtFGhsbg%3D] 10.1529/biophysj.105.070672View Article

        Copyright

        © to the authors 2006