Fabrication of CuO nanoparticle interlinked microsphere cages by solution method

  • Jian Quan Qi1, 2Email author,

    Affiliated with

    • Hu Yong Tian2,

      Affiliated with

      • Long Tu Li1 and

        Affiliated with

        • Helen Lai Wah Chan2

          Affiliated with

          Nanoscale Research Letters20072:107

          DOI: 10.1007/s11671-007-9039-7

          Received: 21 November 2006

          Accepted: 4 January 2007

          Published: 3 February 2007

          Abstract

          Here we report a very simple method to convert conventional CuO powders to nanoparticle interlinked microsphere cages by solution method. CuO is dissolved into aqueous ammonia, and the solution is diluted by alcohol and dip coating onto a glass substrate. Drying at 80 °C, the nanostructures with bunchy nanoparticles of Cu(OH)2can be formed. After the substrate immerges into the solution and we vaporize the solution, hollow microspheres can be formed onto the substrate. There are three phases in the as-prepared samples, monoclinic tenorite CuO, orthorhombic Cu(OH)2, and monoclinic carbonatodiamminecopper(II) (Cu(NH3)2CO3). After annealing at 150 °C, the products convert to CuO completely. At annealing temperature above 350 °C, the hollow microspheres became nanoparticle interlinked cages.

          Keywords

          CuO Microsphere Narnoparticle

          [137]

          Authors’ Affiliations

          (1)
          Department of Materials Sciences and Engineering, Tsinghua University
          (2)
          Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University

          References

          1. Liu B, Zeng HC: J. Am. Chem. Soc.. 2004,126(26):8124. COI number [1:CAS:528:DC%2BD2cXks1GisLk%3D] COI number [1:CAS:528:DC%2BD2cXks1GisLk%3D] 10.1021/ja048195oView Article
          2. Liang ZH, Zhu YJ: Chem. Lett.. 2005,34(2):214. COI number [1:CAS:528:DC%2BD2MXhsVCis7o%3D] 10.1246/cl.2005.214View Article
          3. Liu QY, Liu ZY, Fan J: Chinese. J. Catal.. 2005,26(1):59.
          4. Morales J, Sanchez L, Martin F, Ramos-Barrado J, Sanchez M: Thin. Solid.. 2005,474(1–2):133. COI number [1:CAS:528:DC%2BD2cXhtFeit7fM] 10.1016/j.tsf.2004.08.071View Article
          5. Zhu YW, Yu T, Cheong FC, Xui XJ, Lim CT, Tan VBC, Thong JTL, Sow CH: Nanotechnology. 2005,16(1):88. COI number [1:CAS:528:DC%2BD2MXitVaksLk%3D] 10.1088/0957-4484/16/1/018View Article
          6. Chang Y, Teo JJ, Zeng HC: Langmuir. 2005,21(3):1074. COI number [1:CAS:528:DC%2BD2MXkvFSnsw%3D%3D] 10.1021/la047671lView Article
          7. Suarez S, Martin JA, Yates M, Avila R, Blanco J: J. Catal.. 2005,229(1):227. COI number [1:CAS:528:DC%2BD2MXjtFKq] 10.1016/j.jcat.2004.10.019View Article
          8. Hou HW, Xie Y, Li Q: Cryst. Growth Des.. 2005,5(1):201. COI number [1:CAS:528:DC%2BD2cXpt1Cqs7Y%3D] 10.1021/cg049972zView Article
          9. Yu T, Cheong FC, Sow CH: Nanotechnology. 2004,15(12):1732. COI number [1:CAS:528:DC%2BD2MXhtFGitr4%3D] 10.1088/0957-4484/15/12/005View Article
          10. Li SZ, Zhang H, Ji YJ, Yang DR: Nanotechnology. 2004,15(11):1428. COI number [1:CAS:528:DC%2BD2MXhsV2gsw%3D%3D] 10.1088/0957-4484/15/11/007View Article
          11. Xu CH, Woo CH, Shi SQ: Chem. Phys. Lett.. 2004,399(1–3):62. COI number [1:CAS:528:DC%2BD2cXpvVels7s%3D] 10.1016/j.cplett.2004.10.005View Article
          12. Bennici S, Carniti P, Gervasini A: Catal. Lett.. 2004,98(4):187. COI number [1:CAS:528:DC%2BD2cXhtVSkt7zL] 10.1007/s10562-004-8679-9View Article
          13. Lu CH, Qi LM, Yang JH, Zhang DY, Wu NZ, Ma JM: J. Phys. Chem. B. 2004,108(46):17825. COI number [1:CAS:528:DC%2BD2cXoslSgt7k%3D] 10.1021/jp046772pView Article
          14. Cao MH, Wang YH, Guo CX, Qi YJ, Hu Wang CW: J. NanoSci. Nanotech.. 2004,4(7):824. COI number [1:CAS:528:DC%2BD2cXovVent7k%3D] 10.1166/jnn.2004.822View Article
          15. Zhu JW, Chen HQ, Liu HB, Yang XJ, Lu LD, Xin W: Mater. Sci. Engr. A. 2004,384(1–2):172. 10.1016/j.msea.2004.06.011View Article
          16. Liang ZH, Zhu YJ: Chem. Lett.. 2004,33(10):1314. COI number [1:CAS:528:DC%2BD2cXosVyns78%3D] 10.1246/cl.2004.1314View Article
          17. Yang R, Gao L: Chem. Lett.. 2004,33(9):1194. COI number [1:CAS:528:DC%2BD2cXnslSqsrk%3D] 10.1246/cl.2004.1194View Article
          18. Du GH, Van Tendeloo G: Chem. Phys. Lett.. 2004,393(1–3):64. COI number [1:CAS:528:DC%2BD2cXlsFKgtbk%3D] 10.1016/j.cplett.2004.06.017View Article
          19. Musa AO, Akomolafe T, Carter MJ: Sol. Energ. Mater. Sol. C. 1998, 51: 305. COI number [1:CAS:528:DyaK1cXhs1Krtrg%3D] 10.1016/S0927-0248(97)00233-XView Article
          20. Muhibbullah M, Hakim MO, Choudhury MGM: Thin Solid Films. 2003, 423: 103. COI number [1:CAS:528:DC%2BD38XpsFSrtrk%3D] 10.1016/S0040-6090(02)00970-7View Article
          21. Ziolo J, Borsa F, Corti M, Rigamonti A, Parmigiani F: J. Appl. Phys.. 1990, 67: 5864. COI number [1:CAS:528:DyaK3cXktlenurs%3D] 10.1063/1.345996View Article
          22. Huang TJ, Yu TC: Appl. Catal.. 1991, 71: 275. COI number [1:CAS:528:DyaK3MXisFeis7g%3D] 10.1016/0166-9834(91)85085-AView Article
          23. Hamada H, Kintaichi Y, Sasaki M, Ito T, Tabata M: Appl. Catal.. 1991, 75: L1. COI number [1:CAS:528:DyaK3MXlsVWmsL8%3D] 10.1016/S0166-9834(00)83117-6View Article
          24. He H, Bourges P, Sidis Y, Ulrich C, Regnault LP, Pailhes S, Berzigiarova NS, Kolesnikov NN, Keimer B: Science. 2002, 295: 1045. COI number [1:CAS:528:DC%2BD38Xht1Grt7c%3D] 10.1126/science.1067877View Article
          25. Lang KM, Madhavan V, Hoffman JE, Hudson EW, Eisaki H, Uchida S, Davis C: Nature. 2002, 415: 412. COI number [1:CAS:528:DC%2BD38XhtVCgtrY%3D] 10.1038/415412aView Article
          26. Novak P: Electrochim. Acta.. 1986, 31: 1167. COI number [1:CAS:528:DyaL28Xls1Sktbs%3D] 10.1016/0013-4686(86)80129-3View Article
          27. Ortiz JR, Ogura T, Medina-Valtierra J, Acosta-Ortiz SE, Bosh P, de las Reyes JA, Lara VH: Appl. Surf. Sci.. 2001, 174: 177. 10.1016/S0169-4332(00)00822-9View Article
          28. Kharas KCC: Appl. Catal. B Environ.. 1993, 2: 207. COI number [1:CAS:528:DyaK3sXksFGjsbo%3D] 10.1016/0926-3373(93)80049-JView Article
          29. Vasiliev RB, Rumyantseva MN, Yakovlev NV, Gaskov AM: Sens. Actua. B Chem.. 1998, 50: 186. 10.1016/S0925-4005(98)00235-4View Article
          30. Nakamura Y, Zhuang H, Kishimoto A, Okada O, Yanagida H: J Electrochem. Soc.. 1998, 145: 632. COI number [1:CAS:528:DyaK1cXpsF2lsQ%3D%3D] 10.1149/1.1838315View Article
          31. Kim DW, Park B, Chung JH, Hong KS: Jpn. J. Appl. Phys.. 2000, 39: 2696. COI number [1:CAS:528:DC%2BD3cXjs12itrs%3D] 10.1143/JJAP.39.2696View Article
          32. Zhengwei Pan, Zurong Dai, Zhonglin Wang: Science. 2000, 291: 1947.
          33. Zhou Y, Yu SH, Cui XP, Wang CY, Chen ZY: Chem. Mater.. 1999, 11: 545. 10.1021/cm981122hView Article
          34. Zhu JJ, Liu SW, Palchik O, Koltypin Y, Gedanken A: Langmuir. 2000, 16: 6396. COI number [1:CAS:528:DC%2BD3cXks1WntL8%3D] 10.1021/la991507uView Article
          35. Du GH, Chen Q, Han PD, Peng LM: Phys. Rew. B. 2003, 67: 035323. 10.1103/PhysRevB.67.035323View Article
          36. Du GH, Peng LM, Chen Q, Zhang S, Zhou WZ: Appl. Phys. Lett.. 2003, 83: 1638. COI number [1:CAS:528:DC%2BD3sXms1Cjsrk%3D] 10.1063/1.1605235View Article
          37. Qi JQ, Zhang T, Lu M, Wang Y, Chen WP, Li LT, Chan HLW: Chem. Lett.. 2005,34(2):180. COI number [1:CAS:528:DC%2BD2MXhsVCju7k%3D] 10.1246/cl.2005.180View Article

          Copyright

          © To the authors 2007