Synthesis of SnS nanocrystals by the solvothermal decomposition of a single source precursor

  • Dmitry S Koktysh1, 2Email author,

    Affiliated with

    • James R McBride1 and

      Affiliated with

      • Sandra J Rosenthal1, 2

        Affiliated with

        Nanoscale Research Letters20072:144

        DOI: 10.1007/s11671-007-9045-9

        Received: 29 November 2006

        Accepted: 5 February 2007

        Published: 24 February 2007

        Abstract

        SnS nanocrystals (NCs) were synthesized from bis(diethyldithiocarbamato) tin(II) in oleylamine at elevated temperature. High-resolution transmission electron microscopy (HRTEM) investigation and X-ray diffraction (XRD) analysis showed that the synthesized SnS particles are monocrystalline with an orthorhombic structure. The shape and size tunability of SnS NCs can be achieved by controlling the reaction temperature and time, and the nature of the stabilizing ligands. The comparison between experimental optical band gap values shows evidence of quantum confinement of SnS NCs. Prepared SnS NCs display strong absorption in the visible and near-infrared (NIR) spectral regions making them promising candidates for solar cell energy conversion.

        Keywords

        Tin sulfide Collodal nanocrystals Chemical synthesis Optical properties Solar energy conversion

        [133]

        Declarations

        Acknowledgments

        This work was supported by the Vanderbilt Institute of Nanoscale Science and Engineering and DOE grant # DE-FG02-02ER45957.

        Authors’ Affiliations

        (1)
        Department of Chemistry, Vanderbilt University
        (2)
        Vanderbilt Institute of Nanoscale Science and Engineering, Vanderbilt University

        References

        1. Rudel H: Ecotoxicol. Environ. Saf. 2003, 56: 180. COI number [1:CAS:528:DC%2BD3sXmt1Wqu7s%3D] 10.1016/S0147-6513(03)00061-7View Article
        2. Winship KA: Adverse Drug React. Acute. Poisoning. Rev. 1988, 7: 19.
        3. Albers W, Haas C, van der Maesen F: Phys. Chem. Solid. 1960, 15: 306. COI number [1:CAS:528:DyaF3MXmvV2ruw%3D%3D] 10.1016/0022-3697(60)90253-5View Article
        4. El-Nahass MM, Zeyada HM, Aziz MS, El-Ghamaz NA: Opt. Mater. 2002, 20: 159. COI number [1:CAS:528:DC%2BD38XnsVais7w%3D] 10.1016/S0925-3467(02)00030-7View Article
        5. Tanusevski A: Semicond. Sci. Technol. 2003, 18: 501. COI number [1:CAS:528:DC%2BD3sXlsV2ktLo%3D] 10.1088/0268-1242/18/6/318View Article
        6. Tanusevski A, Poelman D: Sol. Energy Mater. Sol. Cells. 2003, 80: 297. COI number [1:CAS:528:DC%2BD3sXot1OmsLk%3D] 10.1016/j.solmat.2003.06.002View Article
        7. Loferski JJ: J. Appl. Phys.. 1956, 27: 777. COI number [1:CAS:528:DyaG28Xos12mtg%3D%3D] 10.1063/1.1722483View Article
        8. Nair MTS, Nair PK: Semicond. Sci. Technol. 1991, 6: 132. COI number [1:CAS:528:DyaK3MXhtlelsr8%3D] 10.1088/0268-1242/6/2/014View Article
        9. Koteswara Reddy N, Ramakrishna Reddy KT: Thin Solid Films. 1998, 325: 4. COI number [1:CAS:528:DyaK1cXksVWrtL0%3D] 10.1016/S0040-6090(98)00431-3View Article
        10. Pramanik P, Basu PK, Biswas S: Thin Solid Films. 1987, 150: 269. COI number [1:CAS:528:DyaL2sXmtV2rsbY%3D] 10.1016/0040-6090(87)90099-XView Article
        11. Thangaraju B, Kaliannan P: J. Appl. Phys. D. 2000, 33: 1054. COI number [1:CAS:528:DC%2BD3cXjsVKntLs%3D] 10.1088/0022-3727/33/9/304View Article
        12. Zainal Z, Hussein MZ, Ghazali A: Sol. Energy Mater. Sol. Cells. 1996, 40: 347. COI number [1:CAS:528:DyaK28XktlShtLg%3D] 10.1016/0927-0248(95)00157-3View Article
        13. Perry D, Geanangel RA: Inorg. Chim. Acta.. 1975, 13: 185. COI number [1:CAS:528:DyaE2MXksFamtbo%3D] 10.1016/S0020-1693(00)90196-8View Article
        14. Bratspies GK, Smith JF, Hill JO, Magee RJ: Thermochim. Acta.. 1978, 27: 307. COI number [1:CAS:528:DyaE1MXkslOhtw%3D%3D] 10.1016/0040-6031(78)85046-1View Article
        15. Zhao Y, Zhang Z, Dang H, Liu W: Mater. Sci. Eng. B. 2004, B113: 175. COI number [1:CAS:528:DC%2BD2cXnvVKgt7k%3D] 10.1016/j.mseb.2004.08.003View Article
        16. Schlecht S, Kienle L: Inorg. Chem. 2001, 40: 5719. COI number [1:CAS:528:DC%2BD3MXms1Cjsrw%3D] 10.1021/ic0103852View Article
        17. An C, Tang K, Shen G, Wang C, Yang Q, Hai B, Qian Y: J. Cryst. Growth. 2002, 244: 333. COI number [1:CAS:528:DC%2BD38Xnt1Wks78%3D] 10.1016/S0022-0248(02)01613-5View Article
        18. An C, Tang K, Jin Y, Liu Q, Chen X, Qian Y: J. Cryst. Growth. 2003, 252: 581. COI number [1:CAS:528:DC%2BD3sXis1GrtLo%3D] 10.1016/S0022-0248(03)00961-8View Article
        19. Hu H, Yang B, Zeng J, Qian Y: Mater. Chem. Phys. 2004, 86: 233. COI number [1:CAS:528:DC%2BD2cXkt1CrtL8%3D] 10.1016/j.matchemphys.2004.04.001View Article
        20. Li Q, Ding Y, Wu H, Liu X, Qian Y: Mater. Res. Bull. 2002, 37: 925. COI number [1:CAS:528:DC%2BD38XktVWht70%3D] 10.1016/S0025-5408(02)00705-5View Article
        21. Greyson EC, Barton JE, Odom TW: Small. 2006, 2: 368. COI number [1:CAS:528:DC%2BD28Xhs1aqsL8%3D] 10.1002/smll.200500460View Article
        22. Malik M, O’Brien P, Revaprasadu N: Phosphorus, Sulfur Silicon Relat. Elem. 2005, 180: 689. COI number [1:CAS:528:DC%2BD2MXivFeku7Y%3D] 10.1080/10426500590907426View Article
        23. Pickett NL, O’Brien P: Chemical Record. 2001, 1: 467. COI number [1:CAS:528:DC%2BD3MXptFCrtrw%3D] 10.1002/tcr.10002View Article
        24. Pradhan N, Katz B, Efrima S: J. Phys. Chem. B. 2003, 107: 13843. COI number [1:CAS:528:DC%2BD3sXptVKnt78%3D] 10.1021/jp035795lView Article
        25. Masala O, Seshadri R: Annu. Rev. Mater. Res. 2004, 34: 41. COI number [1:CAS:528:DC%2BD2cXmvVOju74%3D] 10.1146/annurev.matsci.34.052803.090949View Article
        26. Hines MA, Scholes GD: Adv. Mater. 2003, 15: 1844. COI number [1:CAS:528:DC%2BD3sXpt1ylsrg%3D] 10.1002/adma.200305395View Article
        27. Yu WW, Peng X: Angew. Chem. Int. Ed. 2002, 41: 2368. COI number [1:CAS:528:DC%2BD38XlsVyqtrs%3D] 10.1002/1521-3773(20020703)41:13<2368::AID-ANIE2368>3.0.CO;2-GView Article
        28. Mirkovic T, Hines MA, Nair PS, Scholes GD: Chem. Mater. 2005, 17: 3451. COI number [1:CAS:528:DC%2BD2MXksVers7Y%3D] 10.1021/cm048064mView Article
        29. Cho KS, Talapin DV, Gaschler W, Murray CB: J. Am. Chem. Soc. 2005, 127: 7140. COI number [1:CAS:528:DC%2BD2MXjs1Sisb8%3D] 10.1021/ja050107sView Article
        30. J. Bardeen, F.J. Blatt, L.H. Hall, ed. by R. Breckenridge, B. Russel, T. Hahn, Proc. of Photoconductivity Conference (Wiley, New York, 1956)
        31. Lambros AP, Geraleas D, Economou NA: J. Phys. Chem. Solids. 1974, 35: 537. COI number [1:CAS:528:DyaE2cXhtlyqsr8%3D] 10.1016/S0022-3697(74)80008-9View Article
        32. Alivisatos AP: J. Phys. Chem. 1996, 100: 13226. COI number [1:CAS:528:DyaK28Xkt1agu7o%3D] 10.1021/jp9535506View Article
        33. Brus L: J. Phys. Chem. 1986, 90: 2555. COI number [1:CAS:528:DyaL28XktFagtr0%3D] 10.1021/j100403a003View Article

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