Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition

  • Rui Wang1,

    Affiliated with

    • Soon Fatt Yoon1Email author,

      Affiliated with

      • Fen Lu1,

        Affiliated with

        • Wei Jun Fan1,

          Affiliated with

          • Chong Yang Liu1,

            Affiliated with

            • Ter-Hoe Loh2,

              Affiliated with

              • Hoai Son Nguyen2 and

                Affiliated with

                • Balasubramanian Narayanan2

                  Affiliated with

                  Nanoscale Research Letters20072:149

                  DOI: 10.1007/s11671-007-9046-8

                  Received: 24 January 2007

                  Accepted: 8 February 2007

                  Published: 27 February 2007

                  Abstract

                  Si/Si0.66Ge0.34coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHV-CVD) system. The samples were characterized using high resolution x-ray diffraction (HRXRD), cross-sectional transmission electron microscopy (XTEM) and photoluminescence (PL) spectroscopy. Blue shift in PL peak energy due to interwell coupling was observed in the CQWs following increase in the Si barrier thickness. The Si/SiGe heterostructure growth process and theoretical band structure model was validated by comparing the energy of the no-phonon peak calculated by the 6 + 2-bandk·p method with experimental PL data. Close agreement between theoretical calculations and experimental data was obtained.

                  Keywords

                  Si/SiGe Coupled quantum well UHV-CVD

                  [120]

                  Authors’ Affiliations

                  (1)
                  School of Electrical and Electronic Engineering, Nanyang Technological University
                  (2)
                  Institute of Microelectronics

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                  © to the authors 2007