Open Access

Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition

  • Rui Wang1,
  • Soon Fatt Yoon1Email author,
  • Fen Lu1,
  • Wei Jun Fan1,
  • Chong Yang Liu1,
  • Ter-Hoe Loh2,
  • Hoai Son Nguyen2 and
  • Balasubramanian Narayanan2
Nanoscale Research Letters20072:149

DOI: 10.1007/s11671-007-9046-8

Received: 24 January 2007

Accepted: 8 February 2007

Published: 27 February 2007


Si/Si0.66Ge0.34coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHV-CVD) system. The samples were characterized using high resolution x-ray diffraction (HRXRD), cross-sectional transmission electron microscopy (XTEM) and photoluminescence (PL) spectroscopy. Blue shift in PL peak energy due to interwell coupling was observed in the CQWs following increase in the Si barrier thickness. The Si/SiGe heterostructure growth process and theoretical band structure model was validated by comparing the energy of the no-phonon peak calculated by the 6 + 2-bandk·p method with experimental PL data. Close agreement between theoretical calculations and experimental data was obtained.


Si/SiGe Coupled quantum well UHV-CVD


Authors’ Affiliations

School of Electrical and Electronic Engineering, Nanyang Technological University
Institute of Microelectronics


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© to the authors 2007