Open Access

Ultra violet sensors based on nanostructured ZnO spheres in network of nanowires: a novel approach

  • SS Hullavarad1Email author,
  • NV Hullavarad1,
  • PC Karulkar1,
  • A Luykx2 and
  • P Valdivia2
Nanoscale Research Letters20072:161

DOI: 10.1007/s11671-007-9048-6

Received: 3 December 2006

Accepted: 9 February 2007

Published: 3 March 2007


The ZnO nanostructures consisting of micro spheres in a network of nano wires were synthesized by direct vapor phase method. X-ray Photoelectron Spectroscopy measurements were carried out to understand the chemical nature of the sample. ZnO nanostructures exhibited band edge luminescence at 383 nm. The nanostructure based ZnO thin films were used to fabricate UV sensors. The photoresponse measurements were carried out and the responsivity was measured to be 50 mA W−1. The rise and decay time measurements were also measured.


UV Sensor Nano structures Micro-spheres Nanowire network Rise/Decay time Photoresponse Photoluminescence




SSH is thankful to Dr. Diane Pugel and Dr. R.D. Vispute for fruitful discussions. Authors would like to acknowledge the support from Defense Micro Electronic Agency (DMEA) at University of Alaska, Fairbanks.

Authors’ Affiliations

Office of Electronic Miniaturization, University of Alaska Fairbanks
Center for Superconductivity Research, University of Maryland


  1. Ozgur U, Alivov YI, Liu C, Teke A, Reshchikov MA, Do S, Doan S, Avrutin V, Cho S-J, Morkoc H: J. Appl. Phys.. 2005, 98: 041301. 10.1063/1.1992666View ArticleGoogle Scholar
  2. Park YS, Litton CW, Collins TC, Reynolds DC: Phys. Rev.. 1966, 143: 512. COI number [1:CAS:528:DyaF28XmsVWitg%3D%3D] 10.1103/PhysRev.143.512View ArticleGoogle Scholar
  3. Ravinder D, Sharma JK: J. Appl. Phys.. 1985, 58: 838. 10.1063/1.336310View ArticleGoogle Scholar
  4. Wang J S, Lakin KM: Appl. Phys. Lett.. 1983, 42: 352. COI number [1:CAS:528:DyaL3sXpvFKitg%3D%3D] 10.1063/1.93930View ArticleGoogle Scholar
  5. Goncalves G, Pimentel A, Fortunato E, Martins R, Queiroz EL, Bianchi RF, Faria RM: J. Non-Crystalline Solids. 2006, 352: 1444. COI number [1:CAS:528:DC%2BD28Xltl2ltbc%3D] 10.1016/j.jnoncrysol.2006.02.021View ArticleGoogle Scholar
  8. Makino T, Segawa Y, Kawasaki M, Ohtomo A, Shiroki R, Tamura K, Yasuda T, Koinuma H: Appl. Phys. Lett.. 2001, 78: 1237. COI number [1:CAS:528:DC%2BD3MXhtl2gu74%3D] 10.1063/1.1350632View ArticleGoogle Scholar
  9. Hullavarad SS, Dhar S, Varughese B, Takeuchi I, Venkatesan T, Vispute RD: J. Vac. Sci. Technol. A. 2005, 23: 982. COI number [1:CAS:528:DC%2BD2MXmt1Ogt70%3D] 10.1116/1.1913677View ArticleGoogle Scholar
  10. Pearton SJ, Norton DP, Ip K, Heo YW, Steiner T: Prog. Mater. Sci.. 2005, 50: 293. COI number [1:CAS:528:DC%2BD2cXovFWrsbc%3D] 10.1016/j.pmatsci.2004.04.001View ArticleGoogle Scholar
  11. Auret FD, Goodman SA, Hayes M, Legodi MJ, van Laarhoven HA, Look DC: Appl. Phys. Lett.. 2001, 79: 3074. COI number [1:CAS:528:DC%2BD3MXotVCqtbk%3D] 10.1063/1.1415050View ArticleGoogle Scholar
  12. Liang S, Sheng H, Liu Y, Huo Z, Lu Y, Shen H: J. Cryst. Growth. 2001, 225: 110. COI number [1:CAS:528:DC%2BD3MXjvV2murY%3D] 10.1016/S0022-0248(01)00830-2View ArticleGoogle Scholar
  13. Makino T, Ohtomo A, Chia CH, Segawa Y, Koinuma H, Kawasaki M: Physica E: Low-dimensional Syst. Nanostruct.. 2004, 21: 671. COI number [1:CAS:528:DC%2BD2cXitlKjur4%3D] 10.1016/j.physe.2003.11.110View ArticleGoogle Scholar
  14. Chen NB, Sui CH: Mater. Sci. Eng. B. 2006, 126: 16. COI number [1:CAS:528:DC%2BD2MXht1Cqu7nF] 10.1016/j.mseb.2005.08.112View ArticleGoogle Scholar
  15. Service RF: Science. 1997, 276: 895. COI number [1:CAS:528:DyaK2sXjt1Wlt7o%3D] 10.1126/science.276.5314.895View ArticleGoogle Scholar
  16. Huang MH, Mao S, Feick H, Yan H, Wu Y, Kind H, Weber E, Russo R, Yang P: Science. 2001, 292: 1897. COI number [1:CAS:528:DC%2BD3MXksVaqsb0%3D] 10.1126/science.1060367View ArticleGoogle Scholar
  17. Kovtyukhova NI, Mallouk TE: Chem. – Eur. J.. 2002, 8: 4354. COI number [1:CAS:528:DC%2BD38XotVKhurk%3D] 10.1002/1521-3765(20021004)8:19<4354::AID-CHEM4354>3.0.CO;2-1View ArticleGoogle Scholar
  18. Liu B, Ren T, Zhang J, Chen H, Zhu J, Burda C: Electrochem. Commun.. 2007, 9: 551. 10.1016/j.elecom.2006.08.056View ArticleGoogle Scholar
  19. Cheng XL, Zhao H, Huo LH, Gao S, Zhao JG: Sensor Actuator B. 2004, 102: 248. 10.1016/j.snb.2004.04.080View ArticleGoogle Scholar
  20. C. Ge, C. Xie, S. Cai, Mater. Sci. Eng. B, Doi:10.1016/j.mseb.2006.10.006 (2006)Google Scholar
  21. Zhang Y, Yu K, Jiang D, Zhu Z, Geng H, Luo L: Appl. Surf. Sci.. 2005, 242: 212. COI number [1:CAS:528:DC%2BD2MXktFKkuw%3D%3D] 10.1016/j.apsusc.2004.08.013View ArticleGoogle Scholar
  22. H. Wang, C. Xie, D. Zeng, Z. Yang, J. Colloid Interface Sci. DOI: yjcis 11765 (2006)Google Scholar
  23. Umar A, Kim SH, Im YH, Hahn YB: Superlattic. Microstruct.. 2006, 39: 238. COI number [1:CAS:528:DC%2BD28XjsVeh] 10.1016/j.spmi.2005.08.046View ArticleGoogle Scholar
  24. Liu J, Huang X, Li Y, Zhong Q, Ren L: Mater. Lett.. 2006, 60: 1354. COI number [1:CAS:528:DC%2BD28XhvVWhsbY%3D] 10.1016/j.matlet.2005.11.056View ArticleGoogle Scholar
  25. L. Luo, Y. Zhang, S.S. Mao, L. Lin, Sensor Actuator A, 127, 2006, 201 (2005)Google Scholar
  26. Ding S, Guo J, Yan X, Lin T, Xuan K: J. Crystal Growth. 2005, 284: 142. COI number [1:CAS:528:DC%2BD2MXhtVartLfL] 10.1016/j.jcrysgro.2005.07.003View ArticleGoogle Scholar
  27. Mo. M, Yu JC, Zhang L, Li SA: Adv Mater.. 2005, 17: 756. COI number [1:CAS:528:DC%2BD2MXivVClur8%3D] 10.1002/adma.200401477View ArticleGoogle Scholar
  28. Umar A, Kim SH, Lee Y-S, Nahm KS, Hahn YB: J. Crystal Growth. 2005, 282: 131. COI number [1:CAS:528:DC%2BD2MXmtlOitrs%3D] 10.1016/j.jcrysgro.2005.04.095View ArticleGoogle Scholar
  29. C.D. Wagner, W.M. Riggs, L.E. Davis, J.F. Moulder, G.E. Mullenberg, Handbook of X-ray Photoelectron Spectroscopy, (Perkin-Elmer Corp., Eden Prairie, MN, USA, 1979)Google Scholar
  30. Zou BS, Liu RB, Wang FF, Pan AL, Cao L, Wang ZL: J. Phys. Chem. B. 2006, 110: 12865. COI number [1:CAS:528:DC%2BD28XlsFShs7o%3D] 10.1021/jp061357dView ArticleGoogle Scholar
  31. Leiter F, Alves H, Pfisterer D, Romanov NG, Hofmann DM, Meyer BK: Physica B. 2003, 340–342: 201. 10.1016/j.physb.2003.09.031View ArticleGoogle Scholar
  32. Banerjee D, Lao JY, Wang DZ, Huang JY, Ren ZF, Steeves D, Kimball B, Sennett M: Appl. Phys. Lett.. 2003, 83: 2061. COI number [1:CAS:528:DC%2BD3sXntVCksr8%3D] 10.1063/1.1609036View ArticleGoogle Scholar
  33. Kim TW, Kawazoe T, Yamazaki S, Ohtsu M, Sekiguchi T: Appl. Phys. Lett.. 2004, 84: 3358. COI number [1:CAS:528:DC%2BD2cXjsVKltr4%3D] 10.1063/1.1723696View ArticleGoogle Scholar
  34. Wang X, Li Q, Liu Z, Zhang J, Liu Z, Wang R: Appl. Phys. Lett.. 2004, 84: 4941. COI number [1:CAS:528:DC%2BD2cXks1aqurg%3D] 10.1063/1.1760594View ArticleGoogle Scholar
  35. Yang W, Hullavarad SS, Nagaraj B, Takeuchi I, Sharma RP, Venkatesan T, Vispute RD, Shen H: Appl. Phys. Lett.. 2003, 82: 3424. COI number [1:CAS:528:DC%2BD3sXjvVSmurk%3D] 10.1063/1.1576309View ArticleGoogle Scholar
  36. Keem K, Kim H, Kim GT, Lee JS, Min B, Cho K, Sung M-Y, Kim S: Appl. Phys. Lett.. 2004, 84: 4376. COI number [1:CAS:528:DC%2BD2cXkt1Kiurw%3D] 10.1063/1.1756205View ArticleGoogle Scholar
  37. Ahn SE, Lee JS, Kim H, Kim S, Kang BH, Kim KH, Kim GT: Appl. Phys. Lett.. 2004, 84: 5022. COI number [1:CAS:528:DC%2BD2cXks1ejs70%3D] 10.1063/1.1763633View ArticleGoogle Scholar
  38. Li QH, Wan Q, Liang YX, Wang TH: Appl. Phys. Lett.. 2004, 84: 4556. COI number [1:CAS:528:DC%2BD2cXkt1Khtrw%3D] 10.1063/1.1759071View ArticleGoogle Scholar


© to the authors 2007