Bendability optimization of flexible optical nanoelectronics via neutral axis engineering
- Sangmin Lee†1,
- Jang-Yeon Kwon†2,
- Daesung Yoon3,
- Handong Cho1,
- Jinho You3,
- Yong Tae Kang3,
- Dukhyun Choi3Email author and
- Woonbong Hwang1Email author
© Lee et al.; licensee Springer. 2012
Received: 12 February 2012
Accepted: 15 May 2012
Published: 15 May 2012
The enhancement of bendability of flexible nanoelectronics is critically important to realize future portable and wearable nanoelectronics for personal and military purposes. Because there is an enormous variety of materials and structures that are used for flexible nanoelectronic devices, a governing design rule for optimizing the bendability of these nanodevices is required. In this article, we suggest a design rule to optimize the bendability of flexible nanoelectronics through neutral axis (NA) engineering. In flexible optical nanoelectronics, transparent electrodes such as indium tin oxide (ITO) are usually the most fragile under an external load because of their brittleness. Therefore, we representatively focus on the bendability of ITO which has been widely used as transparent electrodes, and the NA is controlled by employing a buffer layer on the ITO layer. First, we independently investigate the effect of the thickness and elastic modulus of a buffer layer on the bendability of an ITO film. Then, we develop a design rule for the bendability optimization of flexible optical nanoelectronics. Because NA is determined by considering both the thickness and elastic modulus of a buffer layer, the design rule is conceived to be applicable regardless of the material and thickness that are used for the buffer layer. Finally, our design rule is applied to optimize the bendability of an organic solar cell, which allows the bending radius to reach about 1 mm. Our design rule is thus expected to provide a great strategy to enhance the bending performance of a variety of flexible nanoelectronics.
KeywordsFlexible optical nanoelectronics Bendability optimization Neutral axis engineering Buffer layer
There has been rapid development in the field of flexible optical nanoelectronics such as organic solar cells (OSCs) and organic light-emitting diodes for future portable and wearable electronic nanodevices, which have potential personal and military applications [1–10]. These optical nanodevices basically require an optically transparent window to absorb or emit light. Indium tin oxide (ITO) thin films have been widely used as transparent electrodes for such optical nanoelectronics because of their high visible transparency, chemical stability, and excellent adhesion to a substrate [11–13]. However, despite its advantages, ITO is still difficult to apply to flexible optical nanodevices without damaging the electronic functionality under an external bending load because of its brittleness. Researchers are thus trying to find substitutes for ITO such as carbon nanotube, graphene, and aluminum-doped zinc oxide (AZO) [10, 12–14]. However, with these alternatives, it is still difficult not only to successfully achieve a high-quality and low-cost production that is as good as ITO with high transparency (higher than 90 %) and low electric resistance (less than 10 Ω), but also to successfully increase bendability due to their brittleness which is common with ITO. Thus, it is critically necessary to develop innovative ideas and solutions to enhance mechanical stability of ITO under external bending loads.
To improve the bendability of flexible nanoelectronics, a buffer layer has been adopted [3, 6, 9, 15]. Researchers have reported that the mechanical bendability of electronic nanodevices can be increased by using a buffer layer above or below the ITO layer. However, they did not suggest an optimized design rule that considers both the thickness and elastic modulus of the buffer material. Because various buffer layers could be used to increase the thermal, chemical, and mechanical stabilities of flexible electronic nanodevices, a governing design rule is crucially needed to optimize the bendability of these flexible nanodevices regardless of the buffer layers that are chosen. In this article, we report a design rule for the bendability optimization of flexible optical nanoelectronics through controlling the neutral axis (NA). If we place the fragile layer such as ITO in a nanodevice at the NA position, the bending stress and strain in the layer are greatly reduced, thus enhancing the bendability of the device. Therefore, we first investigate the behavior of the NA position and the effect on the device bendability by independently considering the elastic modulus and thickness of a buffer layer on the ITO. Because the elastic modulus and thickness of a buffer layer influenced each other when determining the NA, we should consider these parameters together. Therefore, we develop a design rule for the bendability optimization of flexible electronics by controlling the NA position, considering both the thickness and elastic modulus of the buffer layer. Finally, our design rule to optimize the bendability of flexible devices is applied to an inverted OSC with an ITO optical window. We believe that our design rule based on NA engineering will provide a great advantage to improve the bendability of flexible nanoelectronics.
In this equation, the normal stresses acting on the cross section are proportional to the distance, y, from the NA at a given κ. Thus, it is important to locate the most fragile material at the NA position to minimize the stress applied to the material. As shown in Figure 1a,b, when there are homogeneous films with a symmetric cross section, such as ITO and a substrate, we compared the maximum bending stresses of ITO films without and with a buffer layer. Based on Equation 3, the maximum bending stress of the ITO with a buffer layer can be significantly decreased more than that of the ITO without a buffer layer because , as shown in Figure 1c,d. In other words, by adopting a buffer layer, a fragile layer such as ITO can be located at the NA position and the bending stress acting on the fragile layer can be greatly reduced, thus leading to flexible nanoelectronics with high bendability.
Results and discussion
Mechanical properties of ITO, PES, PI, and ZnO
200 × 103
50 × 103
Again, to confirm these results, we performed a simulation of the PI(tb)/ITO/PES structure to determine how the maximum bending stress of ITO changed with the buffer layer thickness. Based on the simulated results, we found when the fracture of the ITO layer occurred for each specimen and compared the simulated results with the experimental results. As shown in Figure 5b, the yield of ITO layers consisting of a buffer layer with thicknesses of 0, 50, and 150 μm respectively occurred at curvatures of about 1.1, 1.3, and 2.6 cm−1, and these results were in close agreement with those of the experiment. However, the structures with a buffer layer showed relatively high-level resistances when the bending curvature was larger than 1 cm−1 (i.e., R/R0 were greater than 100). This might be caused by the imperfect bonding of the buffer layer because the PI adhesive tapes were not firmly bound to one another when the thickness was increased. Even though the structures with a buffer layer showed relatively high resistance, for the above-mentioned reason, the simulation and experiment demonstrated that ITO-based structures with a buffer layer are highly reliable and durable during bending. As stated earlier, to significantly increase the bendability of flexible devices, we should place the ITO layer at the NA position.
This equation shows that tb is inversely proportional to the square root of Eb, as shown in Figure 6. This equation provides the design rule that can optimize the bendability of flexible optical nanoelectronics by tuning both the elastic modulus and thickness of a buffer layer. In other words, when designing flexible optical electronics, we can choose a specific material of any thickness and improve not only the mechanical bendability, but also the electrical efficiency. Because there is an enormous variety of materials and structures in flexible electronics, our design rule can have a great effect on these devices. Even though we assumed that one fragile layer exists between the substrate and buffer layer, this design rule can be applied to optical nanoelectronics with multiple fragile layers such as conductive oxides, including ITO, ZnO, and AZO, because the thickness of the conductive oxides for optical electronics is typically less than a few hundred nanometers and all fragile layers are located near the NA. Although the multiple layers exist in OSCs, their effect in Equation 5 is very small and is negligible. Thus, we can obtain the optimized thickness of each buffer layer from Equation 7 when the buffer layers with various material properties are respectively employed.
In summary, we have clearly demonstrated that the bendability of flexible optical nanodevices could be significantly enhanced by NA engineering, considering both the thickness and elastic modulus of a buffer layer on the ITO layer. Because the material property and geometry of a buffer layer could be different based on the purpose of a flexible electronic nanodevice, our design rule, which considers both the thickness and modulus of a buffer layer, is anticipated to be suitable for the bendability optimization of various flexible nanoelectronics. Furthermore, our design rule was applied to inverted OSCs with various buffer materials, and we confirmed that all of the OSCs showed excellent bendability, whatever buffer materials were chosen. Thus, our strategy may provide a wide range of opportunities for a variety of flexible electronic applications.
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Ministry of Education, Science and Technology (MEST) (Nos. 2010–0029120 and 2010–0018457), the Basic Science Research Program through the NRF funded by the MEST (2011–0008589), and a grant (Code No. 2011–0032154) from the Center for Advanced Soft Electronics under the Global Frontier Research Program of MEST. DC also acknowledges the financial supports by the Energy International Collaboration Research & Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Ministry of Knowledge Economy (MKE) (2011–8520010050) and by the Business for Cooperative R&D between Industry, Academy, and Research Institute funded Korea Small and Medium Business Administration in 2011 (Grant No. 48401).
- Normura K, Ohta H, Takagi A, Kamiya T, Hirano M, Hosono H: Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature 2004, 432: 488–492. 10.1038/nature03090View Article
- Han L, Song K, Mandlik P, Wagner S: Ultraflexible amorphous silicon transistors made with a resilient insulator. Appl Phys Lett 2010, 96: 042111. 10.1063/1.3298364View Article
- Sekitani T, Lba S, Kato Y, Noguchi Y, Someya T: Ultraflexible organic field-effect transistors embedded at a neutral strain position. Appl Phys Lett 2005, 87: 173502. 10.1063/1.2115075View Article
- Jedaa A, Halik M: Toward strain resistant flexible organic thin film transistors. Appl Phys Lett 2009, 95: 103309. 10.1063/1.3216587View Article
- Zschieschang U, Ante F, Yamamoto T, Takimiya K, Kuwabara H, Ikeda M, Sekitani T, Someya T, Kern K, Klauk H: Flexible low voltage organic transistors and circuits based on a high mobility organic semiconductor with good air stability. Adv Mater 2010, 22: 982–985. 10.1002/adma.200902740View Article
- Chiang CJ, Winscom C, Bull S, Monkman A: Electroluminescence characterization of FOLED devices under two type of external stresses caused by bending. Org Electron 2009, 10: 1268–1274. 10.1016/j.orgel.2009.07.003View Article
- Ju S, Facchetti A, Xuan Y, Liu J, Ishikawa F, Ye P, Zhou C, Marks TJ, Janes DB: Fabrication of fully transparent nanowire transistors for transparent and flexible electronics. Nature Nanotech 2007, 2: 378–384. 10.1038/nnano.2007.151View Article
- Wang GF, Tao XM, Wang RX: Flexible organic light-emitting diodes with a polymeric nanocomposite anode. Nanotechnology 2008, 19: 145201. 10.1088/0957-4484/19/14/145201View Article
- Sekitani T, Zschieschang U, Klauk H, Someya T: Flexible organic transistors and circuits with extreme bending stability. Nature Mater 2010, 9: 1015–1022. 10.1038/nmat2896View Article
- Ghosh D, Ghosh P, Tanemura M, Haysahi A, Hayashi Y, Shinji K, Miura N, Yusop MZ, Asaka T: Highly transparent and flexible field emission devices based on single-walled carbon nanotube films. Chem Commun 2011, 47: 4980–4982. 10.1039/c0cc05677dView Article
- Minami T, Yamamoto T, Toda Y, Miyata T: Transparent conducting zinc-co-doped ITO films prepared by magnetron sputtering. Thin Solid Films 2000, 373: 189–194. 10.1016/S0040-6090(00)01132-9View Article
- Yaglioglu B, Yeom HY, Paine DC: Crystallization of amorphous InO–10 wt% ZnO thin films annealed in air. Appl Phy Lett 2005, 86: 261908. 10.1063/1.1977209View Article
- Minami T: Present status of transparent conducting oxide thin-film development for indium-tin-oxide (ITO) substitutes. Thin Solid Films 2008, 502: 104–106.
- Wu J, Becerril HA, Bao Z, Liu Z, Chen Y, Peumans P: Organic solar cells with solution-processed graphene transparent electrodes. Appl Phy Lett 2008, 92: 263302. 10.1063/1.2924771View Article
- Park SK, Han JI, Moon DG, Kim WK: Electrical characteristics of poly (3-hexylthiophene) thin film transistors printed and spin-coated on plastic substrates. Jpn J Appl Phys 2003, 42: 623–629. 10.1143/JJAP.42.623View Article
- Oliver WC, Pharr GM: Improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments. J Mater Res 1992, 7: 1564–1567. 10.1557/JMR.1992.1564View Article
- Seitzman LE: Mechanical properties from instrumented indentation: uncertainties due to tip-shape correction. J Mater Res 1998, 13: 2936–2944. 10.1557/JMR.1998.0401View Article
- Herrmann K, Jennett NM, Wegener W, Meneve J, Hasche K, Seemann R: Progress in determination of the area function of indenters used for nanoindentation. Thin Solid Films 2000, 377: 394–400.View Article
- Thurn J, Cook F: Simplified area function for sharp indenter tips in depth-sensing indentation. J Mater Res 2002, 17: 1143–1149. 10.1557/JMR.2002.0169View Article
- Lu C, Danzer R, Fischer FD: Scaling of fracture strength in ZnO: effects of pore/grain-size interaction and porosity. J Eur Ceram Soc 2004, 24: 3643–3651. 10.1016/j.jeurceramsoc.2003.12.001View Article
- James EM: Polymer Data Handbook. New York: Oxford University Press; 1999.
- Kaiyang Z, Furong Z, Jianqiao H, Lu S, Keran Z, Hao G: Investigation on the origin of green luminescence from laser-ablated ZnO thin film. Thin Solid Films 2003, 443: 60–66. 10.1016/S0040-6090(03)00915-5View Article
- Seitz JT: The estimation of mechanical properties of polymers from molecular structure. J Appl Polym Sci 1993, 49: 1331–1351. 10.1002/app.1993.070490802View Article
- Yang PF, Wen HC, Jian SR, Lai YS, Wu S, Chen RS: Characteristics of ZnO thin films prepared by radio frequency magnetron sputtering. Microelec Relia 2008, 48: 389. 10.1016/j.microrel.2007.08.010View Article
- Qi D, Hinkley J, He G: Molecular dynamics simulation of thermal and mechanical properties of polyimide–carbon-nanotube composites. Modelling Simul Mater Sci Eng 2005, 13: 493–507. 10.1088/0965-0393/13/4/002View Article
- Bouten PCP, Sikkeveer PJ, Leterrier Y: Mechanics of ITO on plastic substrates for flexible displays. In Flexible Flat Panel Displays. Edited by: Crawford GP. Chichester: John Wiley & Sons; 2005:99–120.View Article
- Tahk D, Lee HH, Khang DY: Elastic moduli of organic electronic materials by the buckling method. Marcromolecules 2009, 42: 7079–7083. 10.1021/ma900137kView Article
- Diethiker M, Nyilas RD, Solenthaler C, Spolenak R: Nanoindentation of single-crystalline gold thin films: correlating hardness and the onset of plasticity. Acta Materialia 2008, 56: 3887–3899. 10.1016/j.actamat.2008.04.032View Article
- Chen CQ, Zhu J: Bending strength and flexibility of ZnO nanowires. Appl Phys Lett 2009, 90: 043105.View Article
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