Study of the omnidirectional photonic bandgap for dielectric mirrors based on porous silicon: effect of optical and physical thickness
© Ariza-Flores et al; licensee Springer. 2012
Received: 30 April 2012
Accepted: 29 June 2012
Published: 13 July 2012
We report the theoretical comparison of the omnidirectional photonic bandgap (OPBG) of one-dimensional dielectric photonic structures, using three different refractive index profiles: sinusoidal, Gaussian, and Bragg. For different values of physical thickness (PT) and optical thickness (OT), the tunability of the OPBG of each profile is shown to depend on the maximum/minimum refractive indices. With an increase in the value of the maximum refractive index, the structures with the same PT showed a linear increment of the OPBG, in contrast to the structures with the same OT, showing an optimal combination of refractive indices for each structure to generate the maximum OPBG. An experimental verification was carried out with a multilayered dielectric porous silicon structure for all the three profiles.
KeywordsOmnidirectional mirrors Porous silicon Multilayered mirrors Dielectric mirrors
Omnidirectional mirrors (OM) can reflect all the incident light independent of the incidence angle, within a certain wavelength range[1–10]. Omnidirectional properties have been shown using one-dimensional photonic crystals, cladded superlattice structures, multilayered heterostructures, ternary photonic bandgap materials, etc. for different systems (for example, Na3AlF6/Ge, SiO2, BaF2/PbS, GaAs, etc.)[3–5, 7]. Due to their potential applications in optical telecommunications and light-emitting systems, OMs from SiO2, polypropylene, Si, GaN, etc.[11–13] have been reported. Several groups have fabricated OMs from porous silicon (PS) in the near-infrared range due to their advantage over metallic mirrors of being non-absorbing and non-dispersive[14–18]. Usually, PS multilayered structures are designed by alternating low- and high-porosity layers like a Bragg mirror or a mechanically stable, gradually varying Gaussian-like periodic profile[15, 16]. However, for a required physical thickness and omnidirectional photonic bandgap (OPBG), the best choice of the refractive index profile and the combination of indices are still not known. In this work, we report a comparative study of the dependence of OPBG as a function of maximum refractive index for three different refractive index profiles: sinusoidal, Gaussian, and Bragg type. The comparison was carried out between the structures with the same optical thickness (OT) and physical thickness (PT). An experimental verification was performed with the help of PS multilayered photonic structures.
All PS multilayered structures were prepared through anodic etching of a (100)-oriented p-type crystalline Si wafer (resistivity 2 to 5 mΩ cm), under galvanostatic conditions. For the electrochemical anodization process at room temperature, the electrolyte mixture was 1:1 (v/v) of HF (48 wt.%)/ethanol (98 wt.%), respectively. The current density and the etching duration of each layer were controlled by a computer-interfaced electronic circuit where the current density varied from 8.8 to 327 mA/cm2, corresponding to the refractive indices of 2.5 and 1.48, respectively. All the structures consisted of 40 periodic unit cells with a sinusoidal, Gaussian, or Bragg refractive index profile. The reflectivity measurements were carried out with a PerkinElmer Lambda 950 UV/VIS spectrophotometer with a variable angle accessory, Universal Reflectance Accessory (URA; Waltham, MA, USA), for 8° and 68°. The maximum and minimum values of the incidence angle were limited due to the angular range covered by URA.
We used Equation 8 to compute the reflectivity spectrum for a multilayered dielectric structure. The refractive index profiles were obtained from the following equations:
where nmax and nmin are the maximum and minimum refractive indices, respectively, P is the number of periods, N is the number of layers, i is the label representing an arbitrary layer within a certain interval, d is the width of each layer, and σ2 is the variance.
Results and discussion
The nmax was varied from 2.2 to 2.9, while the miminum refractive index (nmin) was adjusted to keep the OT constant as (a) 24, (b) 25, and (c) 26 μ m. The computed range of nmax was limited by the experimental capability to obtain high refractive indices (keeping PS as a possible reference material) and the adjusted values of nmin to keep the same OT of all the structures. Figure1a,b,c demonstrates that for each OT, one can find a particular value of nmax at which the profile corresponding to the higher value of OPBG changes. For example, in Figure1b, the largest OPBG for nmax range of 2.25 to 2.45, the Bragg-type profile has to be the preferred choice. For 2.45 < nmax < 2.57, the sinusoidal profile has the largest OPBG, but the Gaussian profile prevails for nmax > 2.57. A similar behavior is observed for higher OTs (Figure1c). For the OT of 24 μ m, the Bragg-type profile fails to demonstrate any OPBG (Figure1a). Although the Gaussian structure shows the largest OPBG, the corresponding value of nmax is also very high.
Figure1d,e,f shows the comparison of the OPBG for the structures with the same PT, i.e., 7.76 μ m. The nmax was varied from 2.3 to 2.9, while the nmin was kept constant as (a) 1.1, (b) 1.35, and (c) 1.5. Figure1a,b,c demonstrates that the Gaussian refractive index profile always requires higher refractive index values to obtain the same OPBG as compared to the sinusoidal refractive index profile. Equivalently, the OPBG obtained for the sinusoidal profile is always higher as compared to that for the Gaussian profile for a given nmax. In spite of the failure of the Bragg-type profile to demonstrate any OPBG for nmin = 1.1 (see Figure1d), the tunability to increase/decrease the OPBG for nmin = 1.35 as compared to the sinusoidal and Gaussian profiles is shown in Figure1e. One can identify three particular intervals for the Bragg profile (2.35 < nmax < 2.51, 2.51 < nmax < 2.72, and 2.72 < nmax < 2.9) at which the OPBG is higher/lower as compared to the sinusoidal and Gaussian profiles (Figure1e). For a higher nmin, Figure1f shows a significant enhancement for the Bragg-type structure, revealing a larger OPBG as compared to the other profiles. Hence, one can obtain the tunability of the OPBG in a certain refractive index range, depending on the available refractive indices and the profile of the photonic structure.
The result shows that no particular profile can be designated as the best profile for the complete range of maximum refractive indices discussed in this work. Apart from that, one can obtain the tunability of the OPBG in a certain refractive index range, depending on the available refractive indices and the profile of the photonic structure. The vertical dashed line in Figure1b corresponds to nmax = 2.5 and the particular OT incorporated in the forthcoming experimental and simulated results.
We demonstrate that the width of the OPBG depends on the choice of the maximum, the minimum, and the difference of the refractive indices for any given profile (sinusoidal, Gaussian, or Bragg-type refractive index profiles). The structures with the same OT showed an optimal combination of refractive indices to generate the largest OPBG, as compared to the structures with the same PT which showed a linear increase in the OPBG. An experimental verification performed with the nanostructured porous silicon dielectric multilayered structures confirmed the superiority of the sinusoidal profile over the Gaussian profile to enhance the OPBG and reduce the structural stress compared to the Bragg structure. This study can be useful to design the required OPBG structures for photonic applications.
ADA is a Ph.D. student (in Physics) registered at the Faculty of Sciences, UAEM and doing his research work at CIICAp-UAEM, Mexico. LMGS is a professor investigator at the Faculty of Sciences, UAEM and working on the electronic properties of semiconductors from a theoretical point of view. VA is working as a professor investigator at CIICAp UAEM in the field of nanostructured silicon (fabrication, characterization, and applications).
This work has been partially supported by CONACyT under scholarship no. 39986 and project no. 128953.
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