Gain studies of 1.3-μm dilute nitride HELLISH-VCSOA for optical communications
© Chaqmaqchee and Balkan; licensee Springer. 2012
Received: 9 July 2012
Accepted: 2 September 2012
Published: 25 September 2012
The hot electron light emitting and lasing in semiconductor heterostructure-vertical-cavity semiconductor optical amplifier (HELLISH-VCSOA) device is based on Ga0.35In0.65 N0.02As0.08/GaAs material for operation in the 1.3-μm window of the optical communications. The device has undoped distributed Bragg reflectors (DBRs). Therefore, problems such as those associated with refractive index contrast and current injection, which are common with doped DBRs in conventional VCSOAs, are avoided. The gain versus applied electric field curves are measured at different wavelengths using a tunable laser as the source signal. The highest gain is obtained for the 1.3-μm wavelength when an electric field in excess of 2 kV/cm is applied along the layers of the device.
KeywordsHELLISH VCSOA GaInNAs Luminescence Gain
Currently, GaInNAs quantum wells (QWs) grown on GaAs substrates are subject to wide interest, mainly for applications as vertical-cavity surface-emitting lasers and vertical-cavity semiconductor optical amplifiers (VCSOAs) for operation at the 1.3-μm wavelength region. These devices have numerous advantages over edge-emitting lasers and SOAs including less temperature sensitivity, high coupling efficiency to optical fiber (low noise figure), and low power consumption and cost. Furthermore, these structures allow for on-chip testing and fabrication of two-dimensional arrays. The VCSOAs have numerous applications including optical interconnects, wavelength-selective preamplifiers, and optical switches and modulators.
The object of this work presented here is to achieve high gain at low applied voltages, thus low input powers. This is achieved by keeping the length of the devices short (typically 400 μm). The device is characterized at room temperature through the measurements of integrated electroluminescence (EL), light intensity-voltage characteristics, spectral photoluminescence (PL), EL, and electro-photoluminescence (EPL) techniques.
Results and discussions
We report finite gain from an electrically pumped HELLISH-VCSOA at a wavelength of λ = 1,300 nm. The gain may be improved by a better control of Joule heating at high electric fields.
- λ :
distributed Bragg reflectors
- E :
hot electron light-emitting and lasing in semiconductor heterostructure
- T :
vertical-cavity semiconductor optical amplifier.
FAI Chaqmaqchee would like to thank the Ministry of Higher Education and Scientific Research of Iraq for the financial support during her study at the University of Essex. We are grateful to Professor Mark Hopkinson and Dr. Maxim Hughes for growing the structures. Finally, we are grateful to the COST Action MP0805 for the collaborative research.
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