Effect of doping on single-walled carbon nanotubes network of different metallicity
© Tey et al.; licensee Springer. 2012
Received: 16 August 2012
Accepted: 13 September 2012
Published: 3 October 2012
Effects of doping on single-walled carbon nanotubes (SWNT) networks with different metallicity are reported through the study of sheet resistance changes upon annealing and acid treatment. SWNT film with high metallic tube content is found to have relatively good chemical stability against post treatments, as demonstrated from its stable film performance in ambient after annealing, and merely 15% reduction in sheet resistance upon sulfuric acid treatment. Conversely, film stability of SWNT film with low metallic content which comprises largely of semiconducting SWNT varies with days in ambient, and its sheet resistance changes drastically after treated with acid, indicating the extreme sensitivity of semiconducting SWNT to surrounding environment. The results suggest that annealing removes unintentional oxygen doping from the ambient and shifts the Fermi level towards the intrinsic Fermi level. Acid treatment, on the other hand, introduces physisorbed and chemisorbed oxygen and shifts the Fermi level away from the intrinsic level and increases the hole doping.
Carbon nanotube (CNT) is an interesting nanomaterial. Ever since its discovery, single-walled carbon nanotube (SWNT) has been exhaustively studied with all types of characterization tools to understand its unique electrical, mechanical, and thermal properties [1–3]. Among all potential applications, the use of carbon nanotube for flexible transparent conducting film has shown to be a promising area [4–6]. The film conductivity of SWNT thin film arises from the carrier transport along the cylindrical sidewall and the carrier hopping from one tube to another: the higher the tube density, the better the conductivity, which can be understood in the framework of the percolation theory . Intrinsically, single nanotube possesses supremely high electrical conductivity of approximately 106 S/cm at room temperature , a value better than the conductivity of metals such as copper at room temperature. However, the interaction between numerous nanotubes of different properties in 2-D or 3-D networks complicates and alters the transport behavior. The tunneling barrier at the junction of two metallic-SWNTs contact and the junction of two semiconducting SWNTs contact, as well as the Schottky barrier between a metallic SWNT (M-SWNT) and semiconducting SWNT (S-SWNT) , results in that the random CNT network conducting films being unable to meet the film performance as expected theoretically.
CNT has been shown to be sensitive to chemical doping [10, 11]. For film conductivity improvement, acid treatments have been proven effective. Studies of CNT films treated with nitric acid [12, 13], thionyl chloride [12, 13], sulfuric acid , etc. demonstrated increased electrical conductivity. It was understood that these redox dopants introduce hole doping into the CNT network and lower the Fermi level . Very often, annealing step is performed after acid treatment, and hence the sheet resistivity change is a combined effect of both treatment processes. It is then interesting to look into the individual contribution of acid treatment and annealing to the conductivity of CNT network.
In this study, we investigated the impact of vacuum annealing and acid treatment on the SWNT network. In the process of evaluating the film performance, it was interesting to find that SWNT films of heterogeneous electronic types respond differently to the treatment process. We therefore included in this study the performance assessment of SWNT films with three different metallic tubes content, i.e., SWNT films prepared from 5%, 50%, and 90% M-SWNT (or 95%, 50%, and 10% S-SWNT).
CNT films preparation and post-treatment steps
Where ρ is the resistivity; W and L refer to the width and length of the CNT area, respectively; t is the thickness of the film. One drawback of this measurement is that the contact resistance contributes to the measured resistance. Hence, the reported sheet resistance value might be higher than the actual sheet resistance. Nevertheless, since our objective is to understand the impact of post treatments and the changes are usually normalized to the original value, the trends and conclusions drawn from the experiment should not be affected.
After the electrode deposition, the SWNT films were subjected to thermal annealing at 200°C in vacuum, followed by acid treatment in 9 M H2SO4 for different durations. Sheet resistance of the each SWNT pad was recorded for as-prepared condition, after electrode deposition, after annealing step, and after acid treatment to observe the change in value after treatments. This is same for optical characterization.
Electrical and optical characterization of CNT films
The sheet resistance of CNT was measured using Keithley 2600 sourcemeter (Keithley Instruments Inc., Cleveland, OH, USA). The recorded resistance value is equal to sheet resistance due to the patterning of the pad to ensure W = L. For optical characterization, UV-Vis spectrometer was used to estimate the film transparency and enable us to evaluate the changes in film properties by comparing the absorbance peaks before and after various treatment processes.
Results and discussion
After annealing, the films were then immersed in 9 M sulfuric acid for 1 h. Sheet resistances were measured again after the films were taken out from the acid solution, rinsed with DI water, and blown-dried with N2 gas. Measurement results showed that the degree of sheet resistance changes after acid treatment is different from annealing: S-SWNT responded a >90% reduction in resistance after sulfuric acid treatment, while M-SWNT only gave approximately 15% reduction.
Summary of measured sheet resistances from different post treatments for SWNT films of varied metallic/semiconducting content
5% M-SWNT (95% S-SWNT) (%)
50% M-SWNT (50% S-SWNT) (%)
90% M-SWNT (10% S-SWNT) (%)
After acid treatment
For the case of M-SWNT, since M-SWNT has constant DOS near the Fermi level, the Fermi level shift has little effect on the doping. Nevertheless, we still observed improved electrical conductivity in 90% M-SWNT. The improvement could be contributed from the drying of residual surfactant and film densification  after annealing, which leads to a better tube to tube contact (Rcnt-cnt). In addition, annealing also leads to lower surface work function of M-SWNT. For Nanointegris M-SWNT with tube diameter range of 1.2 to 1.7 nm, the work functions are calculated to be 4.75 to 4.77 eV based on first principles calculations . Annealing shifts the work function towards the intrinsic value, making it more compatible with Ti interface (4.33 eV), and facilitates the junction conductance.
The subsequent acid treatment in strong oxidizing sulfulric acid, on the other way, shifts the Fermi level away from the intrinsic level. The treatment has low impact on M-SWNT because of the constant DOS throughout the Fermi level shifting (−15% in Rs) but was significant on S-SWNT. Acid treatment leads to O2 doping either through physisorption on the SWNT surface, or chemisorptions with hydroxyl (-OH) or carboxyl (-COOH) formation on the dangling bonds or defects . Oxygen, with strong electronegativity, acts as electron acceptor and increases hole density in SWNTs. This is clearly illustrated in Figure 6b, which shows the shifting of Fermi level into the second vHS band of S-SWNT (Eacid-treat), and is evidenced by the quench of S11 peak and reduced S22 peak from UV-Vis spectra (Figure 5b). Thus, carrier density increases and conductivity improves.
In summary, we evaluated the effects of annealing and acid treatment on SWNT films of different M-SWNT content. It was found that M-SWNT is more chemically stable than S-SWNT, as was shown from their response to acid treatment and doping, as well as the performance stability in ambient. Annealing removes absorbed O2 and water molecules from the SWNT network, shifts the Fermi level towards intrinsic Fermi level, and reduces hole carrier density. The impact is visible for S-SWNT from the considerable worsened sheet resistance after annealing. For M-SWNT, de-doping has not much effect on the carrier density. Reduction in sheet resistance is hence assumed to be from the better tube-to-tube contact (Rcnt-cnt) and lowered surface work function of annealed M-SWNT, which leads to better carrier flow at the interface. Acid treatment, on the other hand, improves the conductivity through few means: (1) introduces O2 doping to increase hole density, (2) reduces tunneling barriers at tube-tube intersection (Rcnt-cnt), and (3) increases the degree of carrier delocalization to facilitate charge hopping. The impact of acid treatment is very prominent in S-SWNT due to its higher chemical reactivity as compared to M-SWNT. Although the total improvement in S-SWNT is higher than M-SWNT, we found in our experiment that the conductivity of treated M-SWNT film is still superior. Nevertheless, the better chemical reactivity of S-SWNT allows for further potential improvement from doping treatment with other acids or strong oxidizers.
JNT is a scientist of the Joining Technology Group in Singapore Institute of Manufacturing Technology. Her research interest is on carbon nanomaterials development, device fabrication, and characterization. Her recent research focuses on carbon nanotube-based organic electronics for biosensing and photovoltaic application. JW is a senior scientist and group manager of the Joining Technology Group in Singapore Institute of Manufacturing Technology. His research interests include carbon nanotubes, graphene, and other 1D and 2D nanomaterials used for the development and applications of devices and nanocomposites.
The work is supported by Singapore Institute of Manufacturing Technology.
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