Time-dependent universal conductance fluctuations in IrO2 nanowires
© Lin et al.; licensee Springer. 2012
Received: 21 September 2012
Accepted: 4 December 2012
Published: 13 December 2012
Single-crystalline iridium dioxide nanowires show the time-dependent universal conductance fluctuations (TUCFs) at cryogenic temperatures. The conductance fluctuations persist up to temperature T as high as nearly 10 K. The root-mean-square TUCF magnitudes increase with decreasing T, reaching approximately 0.1 e2 / h at 1.7 K. We ascribe these conductance fluctuations to originating from the conduction electrons scattering upon mobile defects (moving scattering centers). Our measured TUCF characteristics are satisfactorily explained in terms of the existing TUCF theory in its three-dimensional form. The extracted electron dephasing length L φ (1.7 K) ≃90 nm is smaller than the diameter (≈ 180 nm) of our nanowires.
KeywordsQuantum-interference effect Universal conductance fluctuation Mobile defect Iridium dioxide nanowire Rutile structure
Quantum-interference effects often manifest in the electronic transport properties of miniature conductors at cryogenic temperatures[1, 2]. The recent development in nanoscale material synthesis methods has made the fabrications of quasi-one-dimensional (Q1D) nanowires widely accessible. One of the experimental realizations of the marked quantum-interference effects is the observation of the universal conductance fluctuations (UCFs)[1–3] in Q1D metallic[4, 5] and heavily doped semiconductor[6, 7] nanowires. In sharp contrast to the classical thermal noise, the UCF magnitudes increase with reducing temperature T[8–11], owing to the inherent quantum nature of the electron waves traversing in a weakly random potential. In the limit of T→0, the root-mean-square UCF magnitudes are theoretically predicted to reach a universal value of C e2 / h, where the constant C depends on sample dimensionality and is of order unity in one, two and three dimensions. A weakly random potential realized in a given sample corresponds to a specific impurity configuration. In the case of the presence of static defects alone, magnetic-field (and Fermi-energy, via a back-gate voltage) dependent UCFs can be observed. This kind of aperiodic UCF ‘magneto-fingerprints’ are largely reproducible if the sample is constantly kept at low temperatures and thus, the impurity configuration remains unaltered during the course of the measurement. Such magnetic-field dependent UCFs have been commonly observed in the past three decades[12–15]. The second kind of conductance fluctuations is the time-dependent UCFs (TUCFs) which have rarely been seen in experiments using conventional lithographic metal mesoscopic structures[16–18]. Recently, two of the authors have observed pronounced TUCFs in single-crystalline RuO2 nanowires grown by the thermal evaporation method. The TUCF signals persisted up to as high as T > 10 K. The measured TUCFs were ascribed to originating from the scattering of conduction electrons with mobile defects, i.e., moving scattering centers. A quantitative comparison with the existing theoretical predictions[20, 21] was satisfactory and, in particular, the number of mobile defects in a phase-coherent volume had been inferred. The mobile defects were proposed to be associated with certain point defects (e.g., oxygen vacancies) which were contained in the as-grown nanowires.
In this paper, we would like to show that notable TUCFs also exist in single-crystalline iridium dioxide (IrO2) nanowires grown by the distinctly different metal-organic chemical vapor deposition (MOCVD) method. Taking together the results obtained in these two complimentary RuO2 and IrO2 nanowire experiments, we demonstrate that mobile defects are common and rich in conducting metal oxide nanowires with rutile structure, regardless of how the nanowires are synthesized. This observation could have important bearing on the fundamental understanding and future applications of nanoscale metallic oxide materials. We would like to mention that TUCFs in conventional metal mesoscopic structures fabricated by physical deposition in conjunction with lithographic method only occur at sub-kelvin temperatures[16–18].
Values of relevant parameters for two IrO 2 nanowire devices
L (μ m)
ρ(300 K) (μΩ cm)
ρ(10 K) (μΩ cm)
Results and discussion
The inset of Figure1 shows the temperature dependence of resistance for the NW1 device from room temperature down to 1.7 K. This figure clearly reveals that the overall electrical transport property of this single-crystalline nanowire is metallic, as previously established theoretically and experimentally[22, 24]. At temperature T below about 50 K, the resistance increases slightly with further reduction of T, suggesting that this nanowire lies in the weakly disordered regime of kFl > 1, where kF is the Fermi wavenumber, and l is the electron mean free path (kFl ≈ 6 in this particular nanowire). The small relative resistance increase of R(1.7 K) / R(50 K) ≃1.014 can arise from the contributions of the weak localization and electron-electron interaction effects[2, 25] (and possibly also from other effects such as the two-level tunneling systems[4, 26]).
The main panel of Figure1 plots the normalized resistance, R(T) / R(30 K), as a function of temperature for T < 60 K. The nanowire resistance was recorded while the temperature was decreased relatively slowly. What is most interesting in this figure is the notably increased resistance distribution at a fixed T as the temperature is lowered to approximately below 6 K. As shown in the previous studies[4, 16–18], this increased resistance distribution with decreasing temperature directly manifests the TUCF behavior whose origin is the existence of moving scattering centers in this particular nanowire. As a consequence, the measured resistance is a function of time at a given temperature. This observation comprises the central theme of this paper. This resistance distribution reflects the presence of the TUCF phenomenon. Thus, we shall argue in our succeeding discussion that a small fraction of the point defects contained in our as-grown nanowires must be the mobile defects. It should be noted that the TUCFs are originated from an inherent quantum-interference mechanism. Contrary to the thermal noise, the fluctuation magnitudes of the TUCFs progressively diminish as the temperature increases.
where L (>L φ ) is the nanowire sample length. In the theory, the so-called saturated regime refers to the regime with the parameter β ≫ (ℓ/L φ )2, where β stands for the ratio of the number of mobile defects to the number of total (static and mobile) defects.
We have carried out least-squares fits of our measured δ Grms(T) to the predictions of Equation 1, using as the sole adjustable parameter, where D is the electron diffusion constant, and τ φ is the T dependent electron dephasing time. Explicitly, in a 3D weakly disordered conductor, the total electron dephasing rate is essentially given by two contributions[28, 29]:, where the first contribution is a constant or a very weakly T-dependent term[30, 31], and the second contribution denotes the electron-phonon relaxation rate, with Aep being the electron-phonon coupling strength, and p being an exponent of temperature. In general, the value of p depends on the measurement temperature interval as well as the degree of disorder in the sample. Typically, 2 ≤ p ≤ 4 in 3D metals[30–32].
Values of fitted parameters for the electron dephasing rate in NW1 device
Aep (K−p s −1)
Our extracted L φ values at different temperatures between 1.7 and 10 K are plotted in the inset of Figure4. We obtain a relatively short L φ (1.7 K) ≈ 90 nm in the NW1 device. Moreover, L φ decreases rapidly with increasing T , reaching a small size of L φ (8 K) ≈ 10 nm. The extracted relatively short L φ values may partly arise from non-negligible experimental uncertainties. First, our measured TUCF magnitudes are small, which render large uncertainties in the separation and evaluations of δ Grms from the background instrumental noise (experimentally, our TUCF signals become hardly distinguished from the instrumental noise as T ≳ 8K). Second, our nanowires with diameters of 180 nm may fall close to the 1D-to-3D crossover regime with regards to the quantum-interference effects, instead of falling deep in the 3D regime. Therefore, Equation 1 is probably only about to become fully valid (however, we would like to remind that our data definitely cannot be described by the 1D form of TUCF theory). Third, the determination of the relevant sample volume L d2 is subject to some uncertainties. In any case, note that we obtain L φ < d over our measurement T range; hence, the 3D TUCF phenomenon in this NW1 device is more or less justified.
We have observed TUCFs at cryogenic temperatures in metallic single-crystalline IrO2 nanowires grown by the MOCVD method. The TUCFs originate from the scattering of conduction electrons upon mobile defects. Our measured TUCF magnitudes as a function of temperature are satisfactorily described by the existing theory in the three-dimensional regime. Taken together with our previous observations in single-crystalline RuO2 nanowires grown by the distinctly different thermal evaporation method, the present study indicates that moving scattering centers may be common to the conducting metal oxide rutile nanostructures, regardless of how they are synthesized. Our observations could have important bearing on the fundamental research and technological applications of synthetic metal oxide nanoelectronic devices.
The authors are grateful to YS Huang for providing us with the IrO2 nanowires used in this study. This work was supported by Taiwan National Science Council through Grant No. 101-2120-M-009-005 and by the MOE ATU Program (for JJL).
- Akkermans E, Montambaux G: Mesoscopic Physics with Electrons and Photons. Cambridge: Cambridge University Press; 2007.View Article
- Al’tshuler BL, Lee PA, Webb RA: Mesoscopic Phenomena in Solids. New York: Elsevier; 1991.
- Washburn S, Webb RA: Aharonov-Bohm effect in normal metal: quantum coherence and transport. Adv Phys 1986, 35: 375. 10.1080/00018738600101921View Article
- Lien AS, Wang LY, Chu CS, Lin JJ: Temporal universal conductance fluctuations in RuO2 nanowires due to mobile defects. Phys Rev B 2011, 84: 155432.View Article
- Yang PY, Wang LY, Hsu YW, Lin JJ: Universal conductance fluctuations in indium tin oxide nanowires. Phys Rev B 2012, 85: 085423.View Article
- Estévez Hernández S, Akabori M, Sladek K, Volk Ch, Alagha S, Hardtdegen H, Pala MG, Demarina N, Grützmacher D, Schäpers Th: Spin-orbit coupling and phase coherence in InAs nanowires. Phys Rev B 2010, 82: 235303.View Article
- Alagha S, Estévez Hernández S, Blömers C, Stoica T, Calarco R, Schäpers Th: Universal conductance fluctuations and localization effects in InN nanowires connected in parallel. J Appl Phys 2010, 108: 113704. 10.1063/1.3516216View Article
- Al’tshuler BL: Fluctuations in the extrinsic conductivity of disordered conductors. JETP Lett 1985, 41: 648.
- Al’tshuler BL, Khmel’Nitskiı̆ DE: Fluctuation properties of small conductors. JETP Lett 1986, 42: 359.
- Lee PA, Stone AD: Universal conductance fluctuations in metals. Phys Rev Lett 1985, 55: 1622. 10.1103/PhysRevLett.55.1622View Article
- Lee PA, Stone AD, Fukuyama H: Universal conductance fluctuations in metals: effects of finite temperature, interactions, and magnetic field. Phys Rev B 1987, 35: 1039. 10.1103/PhysRevB.35.1039View Article
- Umbach CP, Washburn S, Laibowitz RB, Webb RA: Magnetoresistance of small, quasi-one-dimensional, normal-metal rings and lines. Phys Rev B 1984, 30: 4048. 10.1103/PhysRevB.30.4048View Article
- Licini JC, Bishop DJ, Kastner MA, Melngailis J: Aperiodic magnetoresistance oscillations in narrow inversion layers in Si. Phys Rev Lett 2987, 55: 1985.
- Skocpol WJ, Mankiewich PM, Howard RE, Jackel LD, Tennant DM, Stone AD: Universal conductance fluctuations in silicon inversion-layer nanostructures. Phys Rev Lett 2865, 56: 1986.
- Thornton TJ, Pepper M, Ahmed H, Davies GJ, Andrews D: Universal conductance fluctuations and electron coherence lengths in a narrow two-dimensional electron gas. Phys Rev B 1987, 36: 4514. 10.1103/PhysRevB.36.4514View Article
- Beutler DE, Meisenheimer TL, Giordano N: Resistance fluctuations in thin Bi wires and films. Phys Rev Lett 1987, 58: 1240. 10.1103/PhysRevLett.58.1240View Article
- Meisenheimer TL, Giordano N: Conductance fluctuations in thin silver films. Phys Rev B 1989, 39: 9929. 10.1103/PhysRevB.39.9929View Article
- Meisenheimer TL, Beutler DE, Giordano N: Conductance fluctuations in thin metal films. Jpn J Appl Phys 1987, 26: 695. 10.1143/JJAP.26.695View Article
- Giordano N: Conductance fluctuations and low-frequency noise in small disordered systems: experiment. In Mesoscopic Phenomena in Solids. Edited by: Al’tshuler BL, Lee PA, Webb RA. Elsevier, New York; 1991:131–131.View Article
- Feng S, Lee PA, Stone AD: Sensitivity of the conductance of a disordered metal to the motion of a single atom: implications for 1/f noise. Phys Rev Lett 1986, 56: 1960. A published erratum appears in Phys Rev Lett 1986, 56:2772 A published erratum appears in Phys Rev Lett 1986, 56:2772 10.1103/PhysRevLett.56.1960View Article
- Feng S: Conductance fluctuations and 1/f noise magnitudes in small disordered structures: theory. In Mesoscopic Phenomena in Solids. Edited by: Al’tshuler BL, Lee PA, Webb RA. New York: Elsevier; 1991:107–107.View Article
- Lin YH, Sun YC, Jian WB, Chang HM, Huang YS, Lin JJ: Electrical transport studies of individual IrO2 nanorods and their nanorod contacts. Nanotechnology 2008, 19: 045711. 10.1088/0957-4484/19/04/045711View Article
- Mattheiss LF: Electronic structure of RuO2, OsO2, and IrO2. Phys Rev B 2433, 13: 1976.
- Lin JJ, Huang SM, Lin YH, Lee TC, Liu H, Zhang XX, Chen RS, Huang YS: Low temperature electrical transport properties of RuO2 and IrO2 single crystals. J Phys: Condens Matter 2004, 16: 8035. 10.1088/0953-8984/16/45/025
- Al’tshuler BL, Aronov AG, Gershenson ME, Sharvin Yu V: Quantum effects in disordered metal films. Sov Sci Rev Sect A: Phys Rev 1987, 9: 223.
- Chiu SP, Chung HF, Lin YH, Kai JJ, Chen FR, Lin JJ: Four-probe electrical-transport measurements on single indium tin oxide nanowires between 1.5 and 300 K. Nanotechnology 2009, 20: 105203. 10.1088/0957-4484/20/10/105203View Article
- Ralls KS, Skocpol WJ, Jackel LD, Howard RE, Fetter LA, Epworth RW, Tennant DM: Discrete resistance switching in submicrometer silicon inversion layers: individual interface traps and low-frequency (1/f?) noise. Phys Rev Lett 1984, 52: 228. 10.1103/PhysRevLett.52.228View Article
- Zhong YL, Lin JJ: Observation of a linear mean-free-path dependence of the electron-phonon scattering rate in thick AuPd films. Phys Rev Lett 1998, 80: 588. 10.1103/PhysRevLett.80.588View Article
- Zhong YL, Sergeev A, Chen CD, Lin JJ: Direct observation of electron dephasing due to inelastic scattering from defects in weakly disordered AuPd wires. Phys Rev Lett 2010, 104: 206803.View Article
- Lin JJ, Bird JP: Recent experimental studies of electron dephasing in metal and semiconductor mesoscopic structures. J Phys: Condens Matter 2002, 14: R501. 10.1088/0953-8984/14/18/201
- Lin JJ, Li TJ, Zhong YL: Electron dephasing near zero temperature: an experimental review. J Phys Soc Jpn 2003, 72(Suppl. A):7.View Article
- Sergeev A, Mitin V: Electron-phonon interaction in disordered conductors: static and vibrating scattering potentials. Phys Rev B 2000, 61: 6041. 10.1103/PhysRevB.61.6041View Article
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