Investigation of electronic properties of graphene/Si field-effect transistor
© Ma et al.; licensee Springer. 2012
Received: 12 October 2012
Accepted: 1 December 2012
Published: 17 December 2012
We report a high-performance graphene/Si field-effect transistor fabricated via rapid chemical vapor deposition. Oligolayered graphene with a large uniform surface acts as the local gate of the graphene transistors. The scaled transconductance, gm, of the graphene transistors exceeds 3 mS/μm, and the ratio of the current switch, Ion/Ioff, is up to 100. Moreover, the output properties of the graphene transistor show significant current saturation, and the graphene transistor can be modulated using the local graphene gate. These results clearly show that the device is well suited for analog applications.
KeywordsGraphene/Si field-effect transistor CVD Current saturation Local graphene gate
Graphene is a single-atom-thick carbon film[1, 2] that has a very high carrier mobility (2 × 105 cm2 V−1 s−1), a high saturation velocity, large current density, and thermal conductivity; as a result, it has attracted significant attention for use in high-speed applications and flexible electronics and as a candidate for next-generation technologies that enhance transistor performance beyond dimensional scaling[3, 4]. To date, graphene-based electronics, including graphene field-effect transistors (GFETs)[5, 6], nanoelectromechanical systems, molecular sensors, graphene-based luminescent diodes, and solar cells[10, 11], have been reported. The simplest and most common approach for the fabrication of GFETs is to borrow mature microelectronic technology. This technology requires the deposition of large and uniform graphene thin films on a Si substrate in order to form a back gate. However, it is a challenge to synthesize low-defect and structurally continuous graphene mono- or oligolayers; this represents a major limitation for the rapid adoption of high-quality GFET applications. Graphene can be deposited on Si using the widely studied stripped method, cut-and-choose transfer printing, the epitaxial method[6, 14], chemical vapor deposition (CVD), and other methods[16, 17]. The former two methods are very complex and increase the risk of impurities, which negatively affect transistor performance. Herein, for the rapid preparation of high-quality graphene films and GFETs, we adopt a low-pressure, rapid CVD technology. The surface morphology, structure, carrier concentration, and carrier mobility of the resultant graphene films are systemically studied. In addition, the transport properties of the GFET, such as transconductance, g m , ratio of current switch, Ion/Ioff, and current saturation characteristics, are analyzed. Finally, the carrier transport mechanism in the GFET is discussed.
Results and discussion
High-performance graphene/Si transistors were fabricated by rapid chemical vapor deposition. The electron mobility of the graphene film is 5.1 × 104 cm2 V−1 s−1, the scaled transconductance of the graphene transistors exceeds 3 mS/μm, and the ratio of the current switch, Ion/Ioff, is as high as 100. The fabricated GFET shows current saturation characteristics which demonstrate that two-dimensional graphene devices can be used for analog and radio-frequency circuit applications without the need for bandgap engineering.
XM is a professor and PhD degree holder specializing in semiconductor materials and devices, specially expert in nanoscaled optical-electronic materials and optoelectronic devices. WG is a graduate student major in fabrication of new semiconductor nanometer materials. JS is a lecturer and PhD degree holder specializing in semiconductor devices. YT is an engineer specializing in optoelectronic measurements.
This work was supported in part by the National Natural Science Foundation of China (no. 60976071) and the Scientific Project Program of Suzhou City (no. SYG201121).
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