Analysis of the 3D distribution of stacked self-assembled quantum dots by electron tomography
© Hernández-Saz et al.; licensee Springer. 2012
Received: 23 October 2012
Accepted: 12 December 2012
Published: 18 December 2012
The 3D distribution of self-assembled stacked quantum dots (QDs) is a key parameter to obtain the highest performance in a variety of optoelectronic devices. In this work, we have measured this distribution in 3D using a combined procedure of needle-shaped specimen preparation and electron tomography. We show that conventional 2D measurements of the distribution of QDs are not reliable, and only 3D analysis allows an accurate correlation between the growth design and the structural characteristics.
KeywordsFocused ion beam Electron tomography Needle-shaped samples Quantum dots Semiconductor transmission electron microscopy High angle annular dark field 81.05.Ea 81.07.Ta 68.37.Ma
Most optoelectronic devices based in quantum dots (QDs) such as optical amplifiers, infrared detectors, or lasers require stacking of multiple QDs layers to enhance properties as the number of photons emitted or absorbed per unit area. For small spacer layers, QDs tend to align vertically because of the strain fields caused by the buried dots[4, 5]. These strain fields have a strong effect in the size and shape of the QDs and consequently, in the optoelectronic properties of the corresponding devices[6–11]. The vertical distribution of the QDs has a direct effect in its electronic structure due to a possible electron tunneling between layers, and it has also been found to influence optical properties such as the photoluminescence emission of the structure. Because of this, understanding the 3D distribution of stacked QDs is essential to understand and optimize the functional properties of a wide range of devices.
Although various techniques have been used to assess the vertical distribution of QDs[14–16], one of the most powerful techniques for this purpose is transmission electron microscopy (TEM) because it gives direct evidence of the location of the QDs. However, the vertical alignment of the stacking of QDs is often analyzed by TEM from 2D projections of the volume of the sample in one or several directions[17, 18], losing 3D information and therefore, making the complete correlation with the optical characteristics unfeasible. To solve this problem, electron tomography is the most appropriate technique. An accurate 3D reconstruction in electron tomography needs the accomplishment of some requirements, the most important one being that the input 2D images must be the true projections of the original 3D object. This condition can be met by using high-angle annular dark field (HAADF) scanning transmission electron microscopy (STEM) images for the tilting series, given that the diffraction effects present in conventional bright field TEM images are minimized.
On the other hand and regarding the specimen, it is required that the electron beam crosses a constant thickness of the electron-transparent foil when traveling through the sample during the tilting series. This is not accomplished by the thin foils prepared by the conventional method of specimen preparation, and only cylindrical or conical-shaped specimens with the symmetry axis parallel to the tilting axis would meet this requirement. The fabrication of these specimens in the form of needles has been recently accomplished with the use of a dual beam scanning electron microscopy-focused ion beam instrument (FIB), and it has been applied to atom probe analyses, electron tomography studies, and 3D-STEM observations.
In this paper, we have analyzed the vertical alignment of InAs/GaAs stacked QDs grown between GaP strain compensation layers by electron tomography with HAADF images, using a needle-shaped specimen fabricated by FIB. Contrary to what is derived from a 2D conventional analysis, we have observed a considerable deviation of the vertical stacking from the growth direction, which is a key finding for the future interpretation of its functional properties.
The sample studied in this work consists of a stack of 50 layers of self-assembled InAs QDs grown by molecular beam epitaxy at 510°C on GaAs (001). For each layer, 1 ML of GaP have been deposited 1.53 nm below and 12.6 nm above the InAs layer (2 ML of InAs) in order to compensate the strain. Further details about the growth of this sample are included in Alonso-Alvarez et al.. FIB sample preparation has been carried out using a dual-beam FEI Quanta200 3D FIB (FEI Company, Eindhoven, Netherlands) instrument equipped with an in situ Omniprobe micromanipulator (Dallas, TX, USA), where the ion acceleration voltage ranges from 5 to 30 kV.
Sixty-one HAADF-STEM images have been obtained over an angular range of 120° with a tilting step of 2° in a JEOL JEM 2010F electron microscope (JEOL Ltd., Tokyo, Japan) with a field emission gun working at 200 kV using a Fischione tomography holder (model 2030) (Fischione Instruments, 9003 Corporate Circle Export, PA, USA). The tilt series has been accurately aligned using the Inspect 3D software of FEI Company with the cross-correlation method in combination with the least-squares alignment mode with the AMIRA software (Amira, Merignac Cedex, France). The 3D reconstruction has been carried out using the simultaneous iterative reconstruction technique and is visualized with the software AMIRA. Because of the high contrast of the InAs QDs in the HAADF-STEM images, manual segmentation of the tomogram was carried out in order to locate the QDs. The position of the QDs has been considered as the geometric center of the QDs in the tomogram.
FIB sample preparation method
Needle-shaped specimens fabricated for electron tomography need to meet specific requirements, often more strictly than for other applications as atom probe tomography, such as reduced needle diameter and minimized surface amorphous layer. We have previously reported in detail the procedure to fabricate such needles from semiconductor materials. In short, the method consists on protecting the surface of the bulk material by depositing a Pt layer, followed by milling a 1- to 2-μm-thick lamella using the in situ lift-out method and then sculpting a needle using annular patterns of variable diameter. In Hernández-Saz et al., the sample consisted of one layer of InAs QDs grown on InP. However, in the present study, the sample consists of a larger number of InAs QDs layers (50) and grown on a different substrate (GaAs). The fabrication of needles from this sample requires some modifications in the preparation method in order to optimize the structural characteristics of the specimen, which are explained below.
With regard to the substrate, GaAs has a lower sputter yield than InP which means that for a given ion beam current and voltage, the time required for a specific milling step will be higher. In this case, attention should be paid to a possible spatial drift of the sample with time, as its effects on the final geometry of the specimen will be more pronounced.
Parameters used in each step of the annular milling process to fabricate GaAs needles with a reduced diameter along a large range
Inner diameter (nm)
Outer diameter (nm)
Results and discussion
In this image, the InAs QDs can be clearly observed as they exhibit brighter contrast than the GaAs matrix because of the higher average Z number. However, in HAADF images, the static atomic displacements of the atoms, because of the strain in the epitaxial layers, also play an important role in the observed contrast[26, 27]. Because of the rounded shape of the QDs, they are not expected to show sharp upper interfaces when observed by HAADF but with diffused boundaries, in which the contrast is gradually reduced at the edge, as it is shown in the image. Regarding the vertical stacking of the QDs, it is worth mentioning that we have not found a stacking running across all the 50 layers as expected, but only up to approximately 12 to 15 QDs. This could be detrimental to the functional properties of this structure, and it is a consequence of the strain fields in the structure.
About the vertical alignment of the QDs, from the micrograph in the inset of Figure1 (a) it seems to be parallel to the growth direction. In many cases, this is the expected distribution of the QDs since the non-perfect alignment of the QDs has been reported to influence the electron wavefunction and to reduce the exchange energy between electronic states. However, it should be highlighted that TEM cross section images are 2D projections of the sample and therefore, the volume information is lost; this should be taken into account to avoid the misinterpretation of the images. In this regard, (b) and (c) in Figure1 show HAADF images of the same needle-shaped specimen as in (a) in Figure1 but taken at different rotation angles, 90° apart from each other, and −10° and 80° from the micrograph in (a) in Figure1, respectively. The unusual geometry of the needle-shaped specimen fabricated by FIB in this study allowed us to obtain a higher number of projections than possible from the conventional thin foils, providing interesting additional information of the sample. As it can be observed, at these rotation angles, the stacking of QDs is not vertically aligned anymore. Instead, deviation angles of 5° and 11° with respect to the growth direction have been measured. Other values for the vertical alignment of the QDs have been measured from different rotation angles. These experimental results to evidence that the conclusions obtained from the conventional 2D analysis of the stacking of QDs often found in the literature are not reliable and would mislead the interpretation of the functional properties of these nanostructures, being the 3D analysis of the sample as an essential step.
It is worth mentioning that often the 3D information obtained from tomography analyses suffers from the missing wedge artifact due to a lack of information for high rotation angles. This causes an elongation of the features in the sample along the microscope optical axis (in our case, parallel to the wetting layers). Figure2c shows an axial slice through the reconstructed needle, where this elongation is observed. We have superimposed a circle along the surface of the needle to evidence this elongation more clearly. From this figure, we have calculated an elongation percentage due to the missing wedge of 1.14%. We have measured the vertical alignment of the dots using the location of the center of each dot and because of the calculated elongation, this position will be displaced from its real location. The maximum error in the location of the QDs would occur for dots placed close to the surface of the needle, and where the QDs alignment has a component parallel to the optical axis of the microscope. In this case, the error in the angle between the QDs vertical alignment and the growth direction would be of 3.5°. This error could be minimized using needle-shaped specimens in combination with last generation tomography holders that allow a full tilting range. On the other hand, for QDs stacking included in a plane perpendicular to the microscope optical axis located in the center of the needle (as shown in Figure2c), there would be no error in the measurement of the angle. In our case, the vertical alignment of the dots is closer to this second case. In Figure2c we have included the position of the upper QD in the stacking with a white dotted line, and of the lower QD with a black dotted line. As it can be observed, both dots are very close to the center of the needle, and the vertical alignment forms an angle close to 90° with the optical axis; therefore, the error in the measurement of the QDs vertical alignment is near to 1°.
The observed deviation from the growth direction of the stacking of QDs is caused by the elastic interactions with the buried dots and by chemical composition fluctuations[16, 30]. However, other parameters such as the specific shape of the QDs[4, 5, 31], elastic anisotropy of the material[4, 5, 30, 31], or the spacer layer thickness[4, 5, 30] need to be considered as well to predict the vertical distribution of the QDs. Understanding these complex systems needs both a strong theoretical model and precise experimental measurements to compare the obtained results. Our work provides these experimental data. The correlation of these results with the growth design and with the functional properties of these structures will allow closing the loop to optimize the performance of devices based in stacking of QDs.
In summary, we have analyzed the 3D distribution of InAs/GaP/GaAs stacked QDs by electron tomography using HAADF images. For this, we have optimized the needle-shaped specimen fabrication procedure by FIB for samples with multiple layers of QDs. We have found that contrary to what could be derived from a 2D conventional TEM analysis, the QDs do not follow a vertical alignment, but there is a deviation angle of 10° ± 1°. The unambiguous determination of the 3D distribution of QDs is a key for the interpretation of the optoelectronic properties of devices based in stacking of QDs.
JHS is a PhD student at the Universidad de Cádiz. MH is an associate professor at the Departamento de Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica, Universidad de Cádiz. DAA holds a postdoctoral position as Research Associate in the School of Engineering and Physical Sciences at Heriot-Watt University and the Scottish Institute for Solar Energy Research (SISER). SIM is a full professor at the Departamento de Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica, Universidad de Cádiz.
Focused ion beam
High angle annular dark field
Scanning transmission electron microscopy
Transmission electron microscopy.
This work was supported by the Spanish MINECO (projects TEC2011-29120-C05-03 and Consolider Ingenio 2010 CSD2009-00013) and the Junta de Andalucía (PAI research group TEP-946 INNANOMAT). TEM measurements were carried out at DME-SCCYT-UCA.
- Wegert M, Majer N, Ludge K, Dommers-Volkel S, Gomis-Bresco J, Knorr A, Woggon U, Scholl E: Nonlinear gain dynamics of quantum dot optical amplifiers. Semicond Sci Technol 2011, 26: 014008. 10.1088/0268-1242/26/1/014008View Article
- Bhattacharya P, Mi Z, Yang J, Basu D, Saha D: Quantum dot lasers: from promise to high-performance devices. J Cryst Growth 2009, 311: 1625–1631. 10.1016/j.jcrysgro.2008.09.035View Article
- Gong Q, Chen P, Li SG, Lao YF, Cao CF, Xu CF, Zhang YG, Feng SL, Ma CH, Wang HL: Quantum dot lasers grown by gas source molecular-beam epitaxy. J Cryst Growth 2011, 323: 450–453. 10.1016/j.jcrysgro.2010.12.014View Article
- Tersoff J, Teichert C, Lagally MG: Self-organization in growth of quantum dot superlattices. Phys Rev Lett 1996, 76: 1675–1678. 10.1103/PhysRevLett.76.1675View Article
- Wang ZM, Holmes K, Mazur Yu I, Salamo GJ: Fabrication of (In, Ga)As quantum-dot chains on GaAs(100). Appl Phys Lett 2004, 84: 1931–1933. 10.1063/1.1669064View Article
- Wang Zh M, Seydmohamadi S, Lee JH, Salamo GJ: Surface ordering of (In, Ga)As quantum dots controlled by GaAs substrate indexes. Appl Phys Lett 2004, 85: 5031–5033. 10.1063/1.1823590View Article
- Zhi D, Davock H, Murray R, Roberts C, Jones TS, Pashley DW, Goodhew PJ, Joyce BA: Quantitative compositional analysis of InAs/GaAs quantum dots by scanning transmission electron microscopy. J Appl Phys 2001, 89: 2079–2083. 10.1063/1.1337921View Article
- Barker JA, O’Reilly EP: Theoretical analysis of electron–hole alignment in InAs-GaAs quantum dots. Physical Review B 2000, 61: 13840–13851. 10.1103/PhysRevB.61.13840View Article
- Rosenauer A, Oberst W, Litvinov D, Gerthsen D, Forster A, Schmidt R: Structural and chemical investigation of In(0.6)Ga(0.3)As Stranski-Krastanow layers buried in GaAs by transmission electron microscopy. Physical Review B 2000, 61: 8276–8288. 10.1103/PhysRevB.61.8276View Article
- Fry PW, Itskevich IE, Mowbray DJ, Skolnick MS, Finley JJ, Barker JA, O’Reilly EP, Wilson LR, Larkin IA, Maksym PA, Hopkinson M, Al-Khafaji M, David JPR, Cullis AG, Hill G, Clark JC: Inverted electron–hole alignment in InAs-GaAs self-assembled quantum dots. Phys Rev Lett 2000, 84: 733–736. 10.1103/PhysRevLett.84.733View Article
- Nuntawong N, Tatebayashi J, Wong PS, Huffaker DL: Localized strain reduction in strain-compensated InAs/GaAs stacked quantum dot structures. Appl Phys Lett 2007, 90: 163121. 10.1063/1.2730732View Article
- Alonso-Alvarez D, Taboada AG, Ripalda JM, Alen B, Gonzalez Y, Gonzalez L, Garcia JM, Briones F, Marti A, Luque A, Sánchez AM, Molina SI: Carrier recombination effects in strain compensated quantum dot stacks embedded in solar cells. Appl Phys Lett 2008, 93: 123114. 10.1063/1.2978243View Article
- Jin-Phillipp NY, Phillipp F: Strain distribution in self-assembled InP/GaInP quantum dots. J Appl Phys 2000, 88: 710–715. 10.1063/1.373726View Article
- Srinivasan T, Singh SN, Tiwari U, Sharma RK, Muralidharan R, Rao DVS, Balamuralikrishnan R, Muraleedharan K: Structural and photoluminescence characteristics of molecular beam epitaxy-grown vertically aligned In0.33Ga0.67As/GaAs quantum dots. J Cryst Growth 2005, 280: 378–384. 10.1016/j.jcrysgro.2005.04.010View Article
- Ouattara L, Ulloa JM, Mikkelsen A, Lundgren E, Koenraad PM, Borgstrom M, Samuelson L, Seifert W: Correlation lengths in stacked InAs quantum dot systems studied by cross-sectional scanning tunnelling microscopy. Nanotechnology 2007, 18: 145403. 10.1088/0957-4484/18/14/145403View Article
- Molina SI, Ben T, Sales DL, Pizarro J, Galindo PL, Varela M, Pennycook SJ, Fuster D, Gonzalez Y, Gonzalez L: Determination of the strain generated in InAs/InP quantum wires: prediction of nucleation sites. Nanotechnology 2006, 17: 5652–5658. 10.1088/0957-4484/17/22/020View Article
- Shoji Y, Oshima R, Takata A, Okada Y: The effect of spacer layer thickness on vertical alignment of InGaAs/GaNAs quantum dots grown on GaAs(3 1 1)B substrate. Physica E 2010, 42: 2768–2771. 10.1016/j.physe.2009.11.095View Article
- Gutierrez M, Herrera M, Gonzalez D, Garcia R, Hopkinson M: Role of elastic anisotropy in the vertical alignment of In(Ga)As quantum dot superlattices. Appl Phys Lett 2006, 88: 193118. 10.1063/1.2202190View Article
- Radon J: Ueber die Bestimmung von Funktionen durch ihre integralwerte laengs gewisser Mannigfaltigkeiten. Math-Phys Kl 1917, 69: 262–277.
- Lozano-Perez S: A guide on FIB preparation of samples containing stress corrosion crack tips for TEM and atom-probe analysis. Micron 2008, 39: 320–328. 10.1016/j.micron.2007.12.003View Article
- Ke XX, Bals S, Cott D, Hantschel T, Bender H, Van Tendeloo G: Three-dimensional analysis of carbon nanotube networks in interconnects by electron tomography without missing wedge artifacts. Microsc Microanal 2010, 16: 210–217.View Article
- Ozasa K, Aoyagi Y, Iwaki M, Hara M, Maeda M: Nanofabrication of cylindrical STEM specimen of InGaAs/GaAs quantum dots for 3D-STEM observation. Ultramicroscopy 2004, 101: 55–61. 10.1016/j.ultramic.2004.04.001View Article
- Hernandez-Saz J, Herrera M, Molina SI: A methodology for the fabrication by FIB of needle-shape specimens around sub-surface features at the nanometre scale. Micron 2012, 43: 643–650. 10.1016/j.micron.2011.11.011View Article
- Langford RM, Rogers M: In situ lift-out: steps to improve yield and a comparison with other FIB TEM sample preparation techniques. Micron 2008, 39: 1325–1330. 10.1016/j.micron.2008.02.006View Article
- Menzel R, Bachmann T, Wesch W: Physical sputtering of III-V-semiconductors with a focused Ga+−beam. Nucl Instrum Methods Phys Res Sect B-Beam Interact Mater Atoms 1999, 148: 450–453. 10.1016/S0168-583X(98)00861-1View Article
- Herrera M, Ramasse QM, Morgan DG, Gonzalez D, Pizarro J, Yanez A, Galindo P, Garcia R, Du MH, Zhang SB, Hopkinson M, Browning ND: Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs. Phys Rev B 2009, 80: 125211.View Article
- Grillo V, Carlino E, Glas F: Influence of the static atomic displacement on atomic resolution Z-contrast imaging. Phys Rev B 2008, 77: 054103.View Article
- Jia BY, Yu ZY, Liu YM, Han LH, Yao WJ, Feng H, Ye H: Electronic structures of stacked layers quantum dots: influence of the non-perfect alignment and the applied electric field. Chin Phys B 2011, 20: 027302. 10.1088/1674-1056/20/2/027302View Article
- Nowak MP, Szafran B, Peeters FM: Manipulation of two-electron states by the electric field in stacked self-assembled dots. J Phys-Condes Matter 2008, 20: 395225. 10.1088/0953-8984/20/39/395225View Article
- Springholz G: Three-dimensional stacking of self-assembled quantum dots in multilayer structures. C R Phys 2005, 6: 89–103. 10.1016/j.crhy.2004.11.001View Article
- Kunert R, Scholla E: Strain-controlled correlation effects in self-assembled quantum dot stacks. Appl Phys Lett 2006, 89: 153103. 10.1063/1.2354476View Article
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