Synthesis and characterization of nanoparticle thin films of a-(PbSe)100−xCdx lead chalcogenides
© Alvi and Khan; licensee Springer. 2013
Received: 10 October 2012
Accepted: 12 February 2013
Published: 2 April 2013
We report the synthesis of amorphous (PbSe)100−xCdx (x = 5, 10, 15, and 20) nanoparticle thin films using thermal evaporation method under argon gas atmosphere. Thin films with a thickness of 20 nm have been deposited on glass substrates at room temperature under a continuous flow (50 sccm) of argon. X-ray diffraction patterns suggest the amorphous nature of these thin films. From the field emission scanning electron microscopy images, it is observed that these thin films contain quite spherical nanoparticles with an average diameter of approximately 20 nm. Raman spectra of these a-(PbSe)100−xCdx nanoparticles show a wavelength shift in the peak position as compared with earlier reported values on PbSe. This shift in peak position may be due to the addition of Cd in PbSe. The optical properties of these nanoparticles include the studies on photoluminescence and optical constants. On the basis of optical absorption measurements, a direct optical bandgap is observed, and the value of the bandgap decreases with the increase in metal (Cd) contents in PbSe. Both extinction coefficient (k) and refractive index (n) show an increasing trend with the increase in Cd concentration. On the basis of temperature dependence of direct current conductivity, the activation energy and pre-exponential factor of these thin films have been estimated. These calculated values of activation energy and pre-exponential factor suggest that the conduction is due to thermally assisted tunneling of the carriers.
KeywordsAmorphous lead chalcogenides Nanoparticle thin films Raman spectra Photoluminescence Optical bandgap dc conductivity
Metal chalcogenides, especially zinc, cadmium, and lead, have a lot of potential as efficient absorbers of electromagnetic radiation [1–3]. In recent years, there has been considerable interest in lead chalcogenides and their alloys due to their demanding applications as detectors of infrared radiation, photoresistors, lasers, solar cells, optoelectronic devices, thermoelectric devices, and more recently, as infrared emitters and solar control coatings [4–6]. A lot of work has also been focused on the fundamental issues of these materials possessing interesting physical properties including high refractive index [6–8].
There have been many theoretical and experimental studies on lead chalcogenides (PbS, PbSe, and PbTe) [9, 10]. These chalcogenides are narrow, direct bandgap semiconductors (IV-VI groups) and crystallized at ambient condition in the cubic NaCl structure. They possess ten valence electrons instead of eight for common zinc blende and wurtzite III-V and II-VI compounds. They also exhibit some unusual physical properties, such as anomalous order of bandgaps, high carrier mobility, and high dielectric constants. All these unique properties of these semiconductors have inculcated great interest in the fundamental studies of these materials. Thin film semiconductor compounds, especially lead chalcogenide, and their alloys have drawn a lot of attention due to their technological importance and future prospects in various electronic and optoelectronic devices [11–13].
Nano-chalcogenides continue to attract the attention of researchers and engineers as a very large group of interesting solids in which unusual physical and chemical phenomena are revealed and as the materials that open new roads in science and technology. The nonlinear optical properties of these materials have attracted much attention because of their large optical nonlinearity and short response time. The size, shape, and surface characteristics have a strong influence on the physical properties of nanomaterials. Therefore, much attention has been paid in controlling these parameters to manipulate the physical properties of nanomaterials. Nanostructure formation has been explored for many kinds of materials, and this leads to an interesting topic also for lead chalcogenides. Lead chalcogenide possesses unique characteristics which are different from those in oxide and halide glasses, i.e., molecular structures and semiconductor properties. However, studies on lead chalcogenides at nanoscale are still at their early stages, and accordingly, overall features of these nanostructures have not been discovered.
Several workers reported the electrical and optical properties of PbSe in bulk form [14–17]. Many studies on PbSe films synthesized by chemical techniques are available in the literature [18–22]. There are also few reports on PbSe films and PbSe nanostructured thin films deposited by thermal evaporation technique [23–26]. Ma et al.  deposited polycrystalline PbSe thin films on Si substrates by thermal reduction method with carbon as the reducing agent. Kumar et al.  have studied the electrical, optical, and structural properties of PbSe1−xTex thin films prepared by vacuum evaporation technique. Lin et al.  reported the fabrication and characterization of IV-VI semiconductor Pb1−xSnxSe thin films on gold substrate by electrochemical atomic layer deposition method at room temperature. Pei et al.  studied the electrical and thermal transport properties of lead-based chalcogenides (PbTe, PbSe, and PbS) with special emphasis on the lattice and the bipolar thermal conductivity. Gad et al.  have studied the optical and photoconductive properties of Pb0.9Sn0.1Se nanostructured thin films deposited by thermal vacuum evaporation and pulse laser technique.
Recently, in a joint article from one of us , the structural, optical, and electrical properties of polycrystalline cadmium-doped lead chalcogenide (PbSe) thin films are reported. They also studied the optical bandgap, optical constants, and temperature dependence of direct current (dc) conductivity of these thin films in polycrystalline form. In the present work, we have synthesized the materials, i.e., (PbSe)100−xCdx in amorphous form using melt quenching technique and the prepared thin films containing nanoparticles using thermal evaporation method. Here, all the calculated experimental parameters are reported on the amorphous thin films containing nanoparticles of (PbSe)100−xCdx.
The source material (PbSe)100−xCdx with x = 5, 10, 15, and 20 were synthesized by direct reaction of high purity (99.999%) elemental Pb, Se, and Cd using melt quenching technique. The desired amounts of the constituent elements were weighed according to their atomic percentage and then sealed in quartz ampoules under a vacuum of 10−6 Torr. The bulk samples of (PbSe)100−xCdx were prepared in steps. Initially, we have prepared PbSe in amorphous form, then doped with cadmium, and finally synthesized the (PbSe)100−xCdx in amorphous form using melt quenching. The sealed ampoules containing the samples PbSe and Cd were kept inside a programmable furnace, where the temperature was raised up to 923 K at the rate of 4 K/min and then maintained for 12 h. During the melt process, the ampoules were agitated frequently in order to intermix the constituents to ensure homogenization of the melt. The melt was then quenched rapidly in ice water.
Thin films of (PbSe)100−xCdx with a thickness of 20 nm were deposited on glass substrates at room temperature under argon pressure of 2 Torr using an Edward Coating Unit E-306 (Island Scientific, Ltd., Isle of Wight, England, UK). The thickness of the films was measured using a quartz crystal monitor (Edward model FTM 7). The earthed face of the crystal monitor was facing the source and was placed at the same height as the substrate. Evaporation was controlled using the same FTM 7 quartz crystal monitor.
The surface morphology of these thin films was studied by field emission scanning electron microscopy (FESEM). We have dispersed these samples in acetone solution, and a drop of solution is dispersed on carbon tape. The morphology of these dispersed particles was also studied. This suggested that the dispersed nanoparticles are aggregated with the average diameter of 20 nm. The X-ray diffraction (XRD) patterns of (PbSe)100−xCdx chalcogenide thin films were recorded using an X-ray diffractometer (Ultima-IV, Rigaku Corporation, Tokyo, Japan). The copper target (Cu-Kα, λ = 1.5406 Å) was used as a source of X-rays. These measurements are undertaken at a scan speed of 2°/min for the scanning angle ranging from 10° to 70°. Thin films composed of nanoparticles were used for measuring optical and electrical parameters. For optical studies, we recorded the Raman spectra, photoluminescence, optical absorption, reflection, and transmission of these thin films containing nanoparticles. Optical absorption and reflection of these thin films were measured by UV–vis spectrophotometer (UV-1620PC, Shimadzu Corporation, Nakagyo-ku, Kyoto, Japan). Raman spectrum is recorded by a Raman spectrophotometer (DXR, Thermo Fisher Scientific, Waltham, MA, USA), and photoluminescence had been measured by a spectro-fluorophotometer (RF-5301PC, Shimadzu). To study the electrical transport properties, dc conductivity of these thin films was measured as a function of temperature. The resistance of these nanoparticle thin films was measured for a temperature range of 293 to 473 K. To measure the resistance, two silver thick electrodes were pasted on these thin films using silver paste. All these measurements were performed in a specially designed I-V measurement setup (4200 Keithley, Keithley Instruments Inc., Cleveland, OH, USA), which was evacuated to a vacuum of 10−6 Torr using a turbo molecular pump. In this setup, thin film was mounted on the sample holder with a small heater fitted below, and the temperature dependence of dc conductivity was studied.
Results and discussion
The understanding of optical and electrical processes in lead chalcogenide materials in nanoscale is of great interest for both fundamental and technological points of view. In recent years, owing to their very interesting physical properties, this particular material has raised a considerable deal of research interest followed by technological applications in the field of micro/optoelectronics. Significant research efforts have been focused to the study of the optical and electrical properties of this compound in thin film formation because the optimization of device performance requires a well-established knowledge of these properties of PbSe and metal-doped PbSe thin films. Here, we have studied the optical absorption, reflection, and transmission of amorphous thin films of (PbSe)100−xCdx nanoparticles as a function of the incident wavelength in the range of 400 to 1–200 nm.
where OD is the optical density measured at a given layer thickness (t).
where A is a constant of the order of unity, ν is the frequency of the incident beam (ω = 2πν), ν0 is the constant corresponding to the lowest excitonic frequency, kB is the Boltzmann constant, and T is the absolute temperature.
Electrical and optical parameters in (PbSe) 100−x Cd x nanoparticle thin films
σdc(Ω−1cm−1) at 380 K
n at 590 nm
k at 590 nm
3.21 × 10-6
2.69 × 108
1.85 × 10-6
3.61 × 106
2.64 × 10-5
8.62 × 106
6.69 × 10-5
2.21 × 107
where B is a constant, Eg is the optical bandgap, and m is a parameter that depends on both the type of transition (direct or indirect) and the profile of the electron density in the valence and conduction bands. The values of m can be assumed to be 1/2, 3/2, 2, and 3, depending on the nature of electronic transition responsible for the absorption: m = 1/2 for allowed direct transition, m = 3/2 for forbidden direct transition, m = 2 for allowed indirect transition, and m = 3 for forbidden indirect transition.
with λ is the wavelength.
For the study of electrical transport in amorphous semiconductors, especially chalcogenide glasses, dc conductivity is one of the important parameters. The dc conductivity of chalcogenide glasses depends on the combination of starting components, synthesis conditions, rate of melt annealing, purity of starting components, thermal treatment, and on some other important factors. The electrical conduction process in amorphous semiconductors is generally governed by the three mechanisms namely (1) the transfer of charge carriers between delocalized states in the conduction band (E > Ec) and valence band (E < Ev), (2) transitions of charge carriers in the band tails, and (3) the hopping of charge carriers between delocalized states in bands near the Fermi level (EF). To explain the conduction mechanism in amorphous semiconductors, studies on temperature dependence of conductivity is reported by various workers [54–57]. It is understood that conduction in chalcogenide glasses is intrinsic [58, 59] and that the Fermi level is close to the midway of the energy gap. Intrinsic conduction of amorphous semiconductors is determined by carrier hopping from the states close to the edge of the valence band to localized states near the Fermi level or from the state near the Fermi level to the conduction band. The suitable conduction mechanism is decided depending on the predominant process. In the case of chalcogenide glasses, the Fermi level is somewhat shifted from the middle of the energy gap toward the valence band .
In the present work, we have also studied the temperature dependence of dc conductivity of thin films of a-(PbSe)100−xCdx nanoparticles over the temperature range of 297 to 400 K. From the variations of dc conductivity with temperature, it is found that the experimental data for the entire temperature range is fitted well with the thermally activated process model. To elucidate the conduction mechanism in the present sample of a-(PbSe)100−xCdx nanoparticles, we have applied the thermally activated process for the temperature region of 297 to 400 K.
Using the slope and intercept of Figure 8, we have calculated the value of ΔEc and σ0, respectively. The calculated values of ΔEc and σ0 for different compositions of cadmium in a-(PbSe)100−xCdx nanoparticle thin films are shown in Table 1. On the basis of these calculated values, it may be suggested that the conduction is due to the thermally assisted tunneling of charge carriers in the extended states for the temperature range of 297 to 400 K of our sample a-(PbSe)100−xCdx nanoparticles. However, it is important to mention that activation energy alone does not provide any information as to whether conduction takes place in the extended states above the mobility edge or by hopping in the localized states. This is due to the fact that both of these conduction mechanisms may take place simultaneously. The activation energy in the former case represents the energy difference between mobility edge and the Fermi level, Ec − EF or EF − EV, and in the latter case, it represents the sum of the energy separation between the occupied localized states and the separation between the Fermi level and the mobility edge. It is evident from Table 1 that dc conductivity increases as the concentration of Cd increases, whereas the value of activation energy decreases with the increase in Cd contents in our lead chalcogenide nanoparticles. An increase in dc conductivity with a corresponding decrease in activation energy is found to be associated with a shift of the Fermi level for the impurity-doped chalcogenide [46, 61]. It also shows that the Fermi level changes after the incorporation of Cd. However, it has also been pointed out that the increase in conductivity could be caused by the increase in the portion of hopping conduction through defect states associated with the impurity atoms .
A clear distinction between these two conduction mechanisms can be made on the basis of the pre-exponential factor value. For conduction in extended states, the value of σ0 reported for a-Se and other Se alloys in thin films is of the order 104 Ω−1 cm−1. In the present sample of a-(PbSe)100−xCdx nanoparticles, the value of σ0 is of the order 107 Ω−1 cm−1. Therefore, extended state conduction is most likely to take place. An overall decrease in the value of σ0 is observed with the increase in Cd contents in the PbSe system, which may be explained using the shift of Fermi level on adding Cd impurity. Therefore, the decrease in the value of σ0 may be due to the change in Fermi level on adding Cd in the PbSe System.
Thin films of amorphous (PbSe)100−xCdx nanoparticles have been synthesized using thermal evaporation technique. The average diameter of these nanoparticles is approximately 20 nm. Raman spectra of these a-(PbSe)100−xCdx nanoparticles revealed the presence of PbSe phases in as-synthesized thin films, and the observed wavelength shift in the peak position as compared with that of reported values on PbSe may be due to the addition of Cd impurity. PL spectra suggest that the peaks show a shift to the lower wavelength side as the metal (Cd) concentration increases, which may be attributed to the narrowing of the bandgap of a-(PbSe)100−xCdx nanoparticles with the increase in cadmium concentration. A direct optical bandgap is observed, which decreases on increasing cadmium concentration. This may also be due to the increase in the density of defect states, which results in the extension of tailing of bands. The value of refraction index and extinction coefficient increases with increasing photon energy for all samples of a-(PbSe)100−xCdx. From temperature dependence of dc conductivity measurements, it may be concluded that conduction is taking place through the thermally activated process over the entire range of investigation. The pre-exponential factor shows an overall decreasing trend with increasing Cd content. The decrease in σ0 may be due to the change in the Fermi level on the addition of Cd in the lead chalcogenide system. Finally, the suitability of these nanoparticles of lead chalcogenides for various applications especially in solar cells can be understood on the basis of these properties.
This paper was funded by the Deanship of Scientific Research (DSR), King Abdulaziz University, Jeddah, under grant number (80-130-D1432). The authors, therefore, acknowledge with thanks DSR technical and financial support.
- Mahapatra PK, Roy CB: Photoelectrochemical cells with mixed polycrystalline n-type CdS-PbS and CdS-CdSe electrodes. Electrochem Acta 1984, 29: 1435. 10.1016/0013-4686(84)87023-1View ArticleGoogle Scholar
- Kenawy MA, Zayed HA, Ibrahim AM: Structural, electrical and optical properties of ternary CdS x Se 1−x thin films. Indian J Pure & Appl Phys 1991, 29: 624.Google Scholar
- Deshmukh LP, More BM, Holikatti SG: Preparation and properties of (CdS) x -(PbS) 1−x thin-film composites. Bull Mater Sci 1994, 17: 455. 10.1007/BF02757889View ArticleGoogle Scholar
- Al-Ghamdi AA, Al-Heniti S, Khan SA: Structural, optical and electrical characterization of Ag doped lead chalcogenide (PbSe) thin films. J Luminescence 2013, 135: 295.View ArticleGoogle Scholar
- Nair PK, Garcia VM, Hernandez AB, Nair MTS: Photoaccelerated chemical deposition of PbS thin films: novel applications in decorative coatings and imaging techniques. J Phys D: Appl Phys 1991, 24: 1466. 10.1088/0022-3727/24/8/036View ArticleGoogle Scholar
- Schluter M, Martinez G, Cohen ML: Pressure and temperature dependence of electronic energy levels in PbSe and PbTe. Phys Rev B 1975, 12: 650. 10.1103/PhysRevB.12.650View ArticleGoogle Scholar
- Yuan S, Krenn H, Springholz G, Bauer G: Dispersion of absorption and refractive index of PbTe and Pb 1−x Eu x Te ( x < 0.05) below and above the fundamental gap. Phys Rev B 1993, 47: 7213. 10.1103/PhysRevB.47.7213View ArticleGoogle Scholar
- Nimtz G, Schlicht B: Narrow-gap lead salts. In Narrow-Gap Semiconductors. New York: Springer-Verlag; 1983:98.Google Scholar
- Chesnokova DB, Moshnikov VA, Gamarts AE, Maraeva EV, Aleksandrova OA, Kuznetsov VV: Structural characteristics and photoluminescence of Pb 1−x Cd x Se ( х = 0–0.20) layers. J Non-Crystt Solids 2010, 356: 2010. 10.1016/j.jnoncrysol.2010.05.025View ArticleGoogle Scholar
- Bencherif Y, Boukra A, Zaoui A, Ferhat M: Lattice dynamics study of lead chalcogenides. Infrared Phys Tech 2011, 54: 39. 10.1016/j.infrared.2010.11.001View ArticleGoogle Scholar
- Henini M, Rodgers PJ, Crump PA, Gallagher BL, Hill G: Growth and electrical transport properties of very high mobility two‐dimensional hole gases displaying persistent photoconductivity. Appl Phys Lett 2054, 1994: 65.Google Scholar
- Zogg H, Alchalabi K, Zimin D, Kellermann K: Electrical and optical properties of PbTe p-n junction infrared sensors. Infrared Phys Technol 2002, 43: 251. 10.1016/S1350-4495(02)00148-2View ArticleGoogle Scholar
- Kumar S, Lal B, Aghamkar P, Husain M: Influence of sulfur, selenium and tellurium doping on optical, electrical and structural properties of thin films of lead salts. J Alloys Compd 2009, 488: 334. 10.1016/j.jallcom.2009.08.126View ArticleGoogle Scholar
- Volkov BA, Ryabova LI, Khokhlov DR: Mixed-valence impurities in lead telluride-based solid solutions. Physics-Uspekhi 2002, 45(8):819. 10.1070/PU2002v045n08ABEH001146View ArticleGoogle Scholar
- Rogacheva EI, Krivulkin IM, Nashchekina ON, Sipatov AY, Volobuev VV, Dresselhaus MS: Effect of oxidation on the thermoelectric properties of PbTe and PbS epitaxial films. Appl Phys Lett 2001, 78: 1661. 10.1063/1.1355995View ArticleGoogle Scholar
- Humprey JN, Prtriz RL: Photoconductivity of lead selenide: theory of the mechanism of sensitization. Phys Rev 1957, 105: 1736. 10.1103/PhysRev.105.1736View ArticleGoogle Scholar
- Vurgaftman I, Meyer JR, Ram-Mohan LR: Band parameters for III–V compound semiconductors and their alloys. J Appl Phys 2001, 89: 5815. 10.1063/1.1368156View ArticleGoogle Scholar
- Streltsov EA, Osipovich NP, Ivashkevich LS, Layakhov AS, Sviridov VV: Electrochemical deposition of PbSe films. Electrochim Acta 1998, 43: 869.View ArticleGoogle Scholar
- Biro LP, Candea RM, Borodi G, Darabont A, Fitori P, Bratu I: Amorphous PbSe films: growth and properties. Thin Solid Films 1988, 165: 303. 10.1016/0040-6090(88)90701-8View ArticleGoogle Scholar
- Hankare PP, Delekar SD, Bhuse VM, Garadkar KM, Sabane SD, Gavali LV: Synthesis and characterization of chemically deposited PbSe thin films. Mater Chem Phys 2003, 82: 505. 10.1016/S0254-0584(03)00375-4View ArticleGoogle Scholar
- Grozdanov I, Najdoski M, Dey SK: A simple solution growth technique for PbSe thin films. Mater Letts 1999, 38: 28. 10.1016/S0167-577X(98)00127-XView ArticleGoogle Scholar
- Molin AN, Dikusar AI: Electrochemical deposition of PbSe thin films from aqueous solutions. Thin Solid Films 1995, 265: 3. 10.1016/0040-6090(95)06548-2View ArticleGoogle Scholar
- Munoz A, Melendez J, Torquemada MC, Rodrigo MT, Cebrian J, De Castro AJ: PbSe photodetector arrays for IR sensors. Thin Solid Films 1998, 317: 425. 10.1016/S0040-6090(97)00576-2View ArticleGoogle Scholar
- Shandalova M, Dashevsky Z, Golana Y: Microstructure related transport phenomena in chemically deposited PbSe films. Mater Chem Phys 2008, 112: 132. 10.1016/j.matchemphys.2008.05.040View ArticleGoogle Scholar
- Kumar S, Khan ZH, Khan MAM, Husain M: Studies on thin films of lead chalcogenides. Curr Appl Phys 2005, 5: 561. 10.1016/j.cap.2004.07.001View ArticleGoogle Scholar
- Li JQ, Li SP, Wang QB, Wang L, Liu FS, Ao WQ: Synthesis and thermoelectric properties of the PbSe 1−x Te x alloys. J Alloys and Compds 2011, 509: 4516. 10.1016/j.jallcom.2011.01.033View ArticleGoogle Scholar
- Ma DW, Cheng C: Preparations and characterizations of polycrystalline PbSe thin films by a thermal reduction method. J Alloys Compds 2011, 509: 6595. 10.1016/j.jallcom.2011.03.100View ArticleGoogle Scholar
- Kumar S, Husain M, Sherma TP, Husain M: Characterization of PbSe 1−x Te x thin films. J Phys Chem Solids 2003, 64: 367. 10.1016/S0022-3697(01)00252-9View ArticleGoogle Scholar
- Lin S, Zhang X, Shi X, Wei J, Lu D, Zhang Y, Kou H, Wang C: Nanoscale semiconductor Pb 1−x Sn x Se ( x = 0.2) thin films synthesized by electrochemical atomic layer deposition. Appl Surf Sci 2011, 257: 5803. 10.1016/j.apsusc.2011.01.108View ArticleGoogle Scholar
- Pei YL, Liu Y: Electrical and thermal transport properties of Pb-based chalcogenides: PbTe, PbSe, and PbS. J Alloys and Compds 2012, 514: 40.View ArticleGoogle Scholar
- Gad S, Rafea MA, Badr Y: Optical and photoconductive properties of Pb0.9Sn0.1Se nano-structured thin films deposited by thermal vacuum evaporation and pulsed laser deposition. J Alloys and Compds 2012, 515: 101.View ArticleGoogle Scholar
- Khan SA, Khan ZH, El-Sebaii AA, Al-Marzouki FM, Al-Ghamdi AA: Structural, optical and electrical properties of cadmium-doped lead chalcogenide (PbSe) thin films. Physica B 2010, 405: 3384. 10.1016/j.physb.2010.05.009View ArticleGoogle Scholar
- Murali KR, Ramanathan P: Characteristics of slurry coated lead selenide films. Chalcogenide Letts 2009, 6(3):91.Google Scholar
- Manciu FS, Sahoo Y, Carreto F, Prasad PN: Size-dependent Raman and infrared studies of PbSe nanoparticles. J Raman Spectrosc 2008, 39: 1135. 10.1002/jrs.1946View ArticleGoogle Scholar
- Li KW, Meng XT, Liang X, Wang , Yan H: Electrodeposition and characterization of PbSe films on indium tin oxide glass substrates. J Solid State Electrochem 2006, 10: 48. 10.1007/s10008-005-0660-zView ArticleGoogle Scholar
- Appel J: Polarons. Solid State Physics, Advances in Research and Applications 1968, 21: 193.Google Scholar
- Ichimura M, Takeuchi K, Nakamura A, Arai E: Photochemical deposition of Se and CdSe films from aqueous solutions. Thin Solid Films 2001, 384: 157. 10.1016/S0040-6090(00)01826-5View ArticleGoogle Scholar
- Fomin VM, Pokatilov EP, Devreese JT, Klimin SN, Gladilin VN, Balaban SN: Multiphonon photoluminescence and Raman scattering in semiconductor quantum dots. Solid State Electron 1998, 42: 1309. 10.1016/S0038-1101(98)00022-7View ArticleGoogle Scholar
- Arivazhagan V, Parvathi MM, Rajesh S: Impact of thickness on vacuum deposited PbSe thin films. Vacuum 2012, 86(8):1092. 10.1016/j.vacuum.2011.10.008View ArticleGoogle Scholar
- Li Z, Wu C, Liu Y, Liu T, Zheng J, Wu M: Preparation of PbSe nanoparticles by electron beam irradiation method. Bulletin of Materials Sciences 2008, 31: 825. 10.1007/s12034-008-0131-0View ArticleGoogle Scholar
- Tauc J: Optical properties of amorphous semiconductors. In Amorphous and Liquid Semiconductors. Edited by: Tauc J. London: Plenum Press; 1974:159.View ArticleGoogle Scholar
- Urbach F: The long-wavelength edge of photographic sensitivity and of the electronic absorption of solids. Phys Rev 1953, 92: 1324.View ArticleGoogle Scholar
- Ilyas M, Zulfequar M, Husain M: Optical investigation of a-Ga x Se 100−x thin films. J Modern Optics 2000, 47: 663.Google Scholar
- Maan AS, Goyal DR, Sharma SK, Sharma TP: Investigation of electrical conductivity and optical absorption in amorphous In X Se 100−x alloys. J Physique III 1994, 4: 493. 10.1051/jp3:1994141View ArticleGoogle Scholar
- Mott NF, Davis EA: Optical properties of amorphous arsenic and the density of states in the bands. In Electronics Processes in Non-Crystalline Materials. Oxford: Clarendon; 1979:426.Google Scholar
- Theye ML: Proceedings of the 5th International Conference on Amorphous and Liquid Semiconductors. 1st edition. Germany: Garmisch-Partenkirchen; 1973.Google Scholar
- Al-Agel FA, Khan SA, Khan ZH, Zulfequar M: Influence of laser-irradiation on structural and optical properties of phase change Ga25Se 75−x Te x thin films. Mat Lett 2012, 92: 424–426.View ArticleGoogle Scholar
- Khan ZH, Zulfequar M, Sharma TP, Husain M: Optical properties of a-Ga20Se 80−x Sb x thin films. J Opt Mater 1996, 6: 139. 10.1016/0925-3467(96)00044-4View ArticleGoogle Scholar
- Khan ZH, Khan SA, Salah N, Habib S: Effect of composition on electrical and optical properties of thin films of amorphous Ga x Se 100−x nanorods. Nanoscale Res Letters 2010, 5: 1512. 10.1007/s11671-010-9671-5View ArticleGoogle Scholar
- Khan ZH, Husain M: Electrical and optical properties of thin film of a-Se70Te30 nanorods. J Alloy and Compd 2009, 486: 774. 10.1016/j.jallcom.2009.07.049View ArticleGoogle Scholar
- Khan ZH, Khan SA, Salah N, Habib S, Al-Ghamdi AA: Electrical and optical properties of a-Se x Te 100–x thin films. Optics & Laser Tech 2012, 44: 6. 10.1016/j.optlastec.2011.05.001View ArticleGoogle Scholar
- Khan ZH, Al-Ghamdi AA, Khan SA, Habib S, Salah N: Morphology and optical properties of thin films of Ga x Se 100−x nanoparticles. Nanoscience and Nanotechnology Letts 2011, 3: 319–323. 10.1166/nnl.2011.1188View ArticleGoogle Scholar
- Al-Hazmi FS: Optical changes induced by laser–irradiation on thin films of Se75S15Ag10 chalcogenide. Chalcogenide Letters 2009, 6: 63.Google Scholar
- Khan ZH, Zulfeqaur M, Ilyas M, Husain M: Non-isothermal electrical conductivity and thermo-electric power of a-Se 80−x Ga20Te x thin films. Acta Physica Polonica (A) 2000, 98: 93.Google Scholar
- Khan ZH, Khan SA, Salah N, Al-Ghamdi AA, Habib S: Electrical properties of thin films of a-Ga x Te 100−x composed of nanoparticles. Phil Mag Letts 2011, 93: 207.View ArticleGoogle Scholar
- Khan ZH, Zulfequar M, Malik MM, Husain M: Effect on Sb on transport properties of a-Se 80−x Ga20Sb x thin films. Jap J Applied Physics 1998, 37: 23. 10.1143/JJAP.37.23View ArticleGoogle Scholar
- Khan ZH, Salah N, Habib S: Electrical transport of a-Se87Te13 nanorods. J Experimental Nanoscience 2011, 6: 337. 10.1080/17458080.2010.497946View ArticleGoogle Scholar
- Minaev VS: Vitreous Semiconducting Alloys. Moscow: Metallurgiya (in Russian); 1991.Google Scholar
- Kostylev SA, Shkut VA, Himinets VV: Structure, physico-chemical properties and applications of non-crystalline semiconductors. Proc Int Conf Amorph Semic 1980, 80: 277.Google Scholar
- Feltz A: Amorphous and Glassy Inorganic Solids (in Russian). Moscow: Mir Publishers, [original German edition: Amorphe und glasartige anorganische Festko¨rper. Berlin: Akademie-Verlag; 1983]; 1986.Google Scholar
- Kolomiets BT, Lebedev EA, Taksami IA: Mechanism of the breakdown in films of glassy chalcogenide semiconductors. Sov Phys Semicond 1969, 3: 267.Google Scholar
- Okano S, Suzuki M, Imura K, Fukada N, Hiraki A: Impurity effects of some metals on electrical properties of amorphous As2Se1Te2 films. J Non-Crys Solids 1983, 59–60: 969.View ArticleGoogle Scholar
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