In-plane optical anisotropy of InAs/GaSb superlattices with alternate interfaces
© Wu et al.; licensee Springer. 2013
Received: 26 April 2013
Accepted: 16 June 2013
Published: 25 June 2013
78.67.Pt, 78.66.Fd, 78.40.Fy
CP energies (in eV) of bulk InAs, GaSb, GaAs, and InSb measured by S.Adachi []
E0 + Δ0
The InAs/GaSb SLs were grown on GaSb buffer layer, which is deposited on non-intentional doping GaSb (001) substrates by molecular beam epitaxy (MBE). The GaAs-like IFs were generated by employing As soaking after GaSb is deposited. The InSb-like IFs were formed by InSb deposition. Two samples have the same structure as 100 periods InAs (10 ML)/GaSb (8 ML) without capping layer. The difference of the two examples is only the thickness of InSb layer, 0.43 ML (sample A) and 1.29 ML (sample B), respectively. We used a Bede D1 high-resolution X-ray diffractometer to characterize structural quality of the samples. The lattice mismatch and one-period thickness can be predicted.
Here, α and β are complicated functions of four refractive indices and the wavelength of light. Both the real and imaginary part of Δ r/r are linear combinations of real and imaginary part of Δ ε. The degree of polarization (DOP) is defined as (M110 is the transition probability when light is polarized along  direction). Im(Δ ε) is proportional to Δ M, and Im(ε) is proportional to M. It can be deduced from the imaginary part of Δ ε and the imaginary part of ε: .
Results and discussion
X-ray diffraction (XRD) results indicate that the range of 0th peak of sample A and the substrate is 0.367° and 0.151° for sample B. The full width at half maximum (FWHM) of the first satellite peak is 34 arcsec for sample A and 43 aresec for sample B. Both of the samples show compression strain. The calculated strain is -0.0054 for sample A and -0.0023 for sample B. Increasing the thickness of InSb-like IF layers can reduce the average compression strain. We predicted one-period thickness from the spacing between the satellites. Each period thickness of sample A is 55.9 Å and 56.8 Å for sample B.
Varshni parameters for temperature-dependence fitting CPs of samples A and B
E 0 (eV)
α 10−4 (eVK−1)
The IPOA of InAs/GaSb SLs with InAs-like and GaSb-like alternate IFs were observed by RDS. The main mechanism can attribute to the symmetry reduction to C2v. The increasing of InSb IFs’ thickness release the mismatch between the SL layer and substrate. The red shift of CP energies was observed. Meanwhile, the holes are further localized in the InSb IFs, leading to the intensities of IPOA further increased.
In-plane optical anisotropy
Reflectance difference spectroscopy
No common atom
Molecular beam epitaxy
Degree of polarization.
This work was supported by the 973 Program (2013CB632805, 2012CB921304 and 2010CB327602) and the National Natural Science Foundation of China (No. 60990313, No. 61176014, and No. 61290303).
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