Growth of single-crystalline cobalt silicide nanowires and their field emission property
© Lu et al.; licensee Springer. 2013
Received: 21 May 2013
Accepted: 27 June 2013
Published: 3 July 2013
In this work, cobalt silicide nanowires were synthesized by chemical vapor deposition processes on Si (100) substrates with anhydrous cobalt chloride (CoCl2) as precursors. Processing parameters, including the temperature of Si (100) substrates, the gas flow rate, and the pressure of reactions were varied and studied; additionally, the physical properties of the cobalt silicide nanowires were measured. It was found that single-crystal CoSi nanowires were grown at 850°C ~ 880°C and at a lower gas flow rate, while single-crystal Co2Si nanowires were grown at 880°C ~ 900°C. The crystal structure and growth direction were identified, and the growth mechanism was proposed as well. This study with field emission measurements demonstrates that CoSi nanowires are attractive choices for future applications in field emitters.
KeywordsCVD Cobalt silicide Nanowires Single crystalline Field emission
Possessing low resistivity and excellent compatibility with conventional silicon device processing, transition metal silicide nanowires have been widely studied [1–5]. Compared with silicon nanowires (NWs), fabricating free-standing silicide NWs is more complicated since metal silicides have lots of phases. In terms of methods, the synthesis of free-standing silicide NWs can be divided into four classifications, which are silicidation of silicon nanowires [6–11], delivery of silicon to metal films [12–16], reactions between transition metal sources and silicon substrates [17–22], and simultaneous metal and silicon delivery [23–25]. Cobalt silicide nanowires have many relatively good characteristics, including low resistivity, good thermal stability, appropriate work function, and compatibility with current processing of Si devices. There are three main methods for synthesizing CoSi NWs, including reactions of CoCl2 with silicon substrates by chemical vapor deposition (CVD) processes [26–28], cobalt silicide nanocables grown on Co films , and CVD with single-source precursors . In this work, we synthesized cobalt silicide nanowires through CVD processes and changed and studied the effects of several critical processing parameters. Additionally, we conducted scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analyses for identifying the structure and composition of the resultant products and investigating their growth mechanisms. Also, the electrical properties of the nanosilicides were measured and discussed for potential applications.
In our study, we synthesized cobalt silicide nanowires by CVD processes using single-crystal Si (100) wafers of native oxide as substrates, anhydrous cobalt chloride powders (97%) as precursors, and Ar gas (99.99%) with H2 gas (15%) as carrier gases. The metal sources were put in the upstream zone where the temperature was 610°C, while the silicon (100) substrates were put in the downstream zone, the temperature range of which was 750°C ~ 900°C. To understand the factors that influence the growth of cobalt silicide nanowires, we conducted experiments with different substrate temperatures, vapor pressures, and gas flow rates. SEM was utilized for the morphology of the nanowires, and TEM analysis was conducted for structure identification and atomic resolution imaging of the nanowires.
Results and discussion
In this study, using a CVD method, we have synthesized cobalt silicide nanowires of two different phases, which are CoSi NWs and Co2Si NWs, respectively. Effects of some processing parameters, including the temperature, gas flow rate, and pressure, were investigated; for example, the number of CoSi nanowires shows a decreasing trend with the increasing gas flow rate. Also, the growth mechanism has been proposed. Electrical measurements demonstrate that the CoSi nanowires are potential field-emitting materials.
KCL acknowledges the support from the National Science Council through grant 100-2628-E-006-025-MY2.
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