The fabrication of white light-emitting diodes using the n-ZnO/NiO/p-GaN heterojunction with enhanced luminescence
© Abbasi et al.; licensee Springer. 2013
Received: 10 April 2013
Accepted: 30 June 2013
Published: 13 July 2013
Cheap and efficient white light-emitting diodes (LEDs) are of great interest due to the energy crisis all over the world. Herein, we have developed heterojunction LEDs based on the well-aligned ZnO nanorods and nanotubes on the p-type GaN with the insertion of the NiO buffer layer that showed enhancement in the light emission. Scanning electron microscopy have well demonstrated the arrays of the ZnO nanorods and the proper etching into the nanotubes. X-ray diffraction study describes the wurtzite crystal structure array of ZnO nanorods with the involvement of GaN at the (002) peak. The cathodoluminescence spectra represent strong and broad visible emission peaks compared to the UV emission and a weak peak at 425 nm which is originated from GaN. Electroluminescence study has shown highly improved luminescence response for the LEDs fabricated with NiO buffer layer compared to that without NiO layer. Introducing a sandwich-thin layer of NiO between the n-type ZnO and the p-type GaN will possibly block the injection of electrons from the ZnO to the GaN. Moreover, the presence of NiO buffer layer might create the confinement effect.
KeywordsWhite light-emitting diode ZnO nanorods Nanotubes NiO buffer layer
Zinc oxide (ZnO) is very much popular among the researchers due its wide direct band gap (3.37 eV) and high exciton binding energy (60 meV) at room temperature. The wide band gap and high exciton binding energy provides a solid platform for the ZnO in the fabrication of optoelectronic nanodevices. Specifically, light-emitting diodes (LEDs) and laser diodes based on the applications of the ZnO material explored its usability, thus ZnO-based light-emitting diodes are considered as the next-generation light-emitting diodes due to their cheap fabrication process and enhanced optical properties . Several synthesis routes have been used for the fabrication of ZnO films and nanostructures, and the prepared ZnO material exhibits good crystalline and optical properties [2–4]. Recently, some ZnO p-n homojunction-based light-emitting diodes have been fabricated [5–7]. Due to the absence of a stable and reproducible p-type doped material with desired quality, ZnO-based light-emitting diodes are not considered up to the level of commercialization. Because of the lack of stable p-type ZnO, most ZnO heterojunctions are developed with the other existing p-type materials including p-type GaN [8–10], Si  and SiC (4H) . Gallium nitride (GaN) is used effectively in the fabrication of heterojunction with ZnO for the development of light-emitting diodes because both materials exhibit a similar crystal wurtzite structure and electronic properties and differ by 1.8% lattice mismatch. The ZnO material is accompanied by the deep-level photoluminescence and electroluminescence (EL) in addition to near-band gap UV emission [11–14]. The deep-level emission is a critical issue which is not yet clear, but it is generally accepted that the possible oxygen vacancies or zinc interstitials are responsible for deep-level emissions . The deep-level emission given by ZnO covers the wide range of visible spectrum, and theoretically, white emission can be obtained by hybridizing the deep-level emission of ZnO with the blue emission of GaN.
In order to improve the luminescence of ZnO-based light-emitting diodes, an interlayer of any other suitable material acting as a buffer medium is highly required for the significant improvement of the internal structure because the interlayer provides a stable charge environment during hole and electron injections in the light emitting part of the diode. Since the introduction of interlayers, such as TiO2, Ag, MoO3, WO3 or NiO interlayers, of different materials has improved the performance of polymer LEDs significantly, it has brought the change in the barriers for electrodes and also increases the hole injection which in result lowers the turn on and working voltage [16–20]. It is also reported that when a thin layer of NiO is deposited at the anode of ITO, then it has enhanced the optoelectronic working activity of double-sided emission devices using the thin-film-based heterojunction of p-NiO and n-ZnO materials . ZnO-based white light-emitting diodes have also been fabricated on GaN substrate by our group previously [22, 23].
Herein, we have developed n-ZnO/p-GaN heterojunctions with the presence and absence of a NiO buffer layer. The NiO buffer layer was deposited by the sol-gel method prior to the growth of the ZnO nanorods and nanotubes on GaN substrate. Four devices are prepared with ZnO nanorods and nanotubes on the GaN substrate: two with NiO buffer layer and the other two without. The devices were characterised by the X-ray diffraction (XRD), scanning electron microscopy (SEM), parameter analyser and the cathodoluminescence (CL) and EL techniques.
Commercially available p-type GaN substrate was used in the development of the present p-n heterojunction. Prior to the growth of the n-type ZnO nanorods, a NiO buffer layer was deposited by the following sol-gel method. A sol-gel of nickel acetate was prepared in the 2-methoxyethanol having a concentration of 0.35 M, and di-ethanolamine was added dropwise under vigorous stirring at 60°C for 2 h by keeping the 1:1 molar ratio of nickel acetate and di-ethanolamine constant. After the synthesis of the sol-gel, cleaned GaN substrate was spin coated with the prepared sol-gel three to five times for the deposition of a thin NiO buffer layer; consequently, the substrate was annealed at 180°C for 20 min. After the annealing, the sample was left in the preheated oven for 4 h at 450°C in order to have a pure phase of NiO. After the deposition of the NiO buffer layer, the substrates were spin coated two to three times with a seed layer of zinc acetate for the growth of the ZnO nanorods and likewise annealed at 120°C for 20 min. Then, the annealed substrates containing the NiO buffer layer were dipped vertically in an equimolar 0.075 M precursor's solution of zinc nitrate hexahydrate and hexamethylenetetramine for 4 to 6 h at 90°C. After the growth of the ZnO nanorods, the nanotubes were obtained by chemical etching using 5 M potassium chloride solution at 85°C for 14 to 16 h.
After the growth of the ZnO nanorods and nanotubes with and without a NiO buffer layer, SEM was used to investigate the morphology of the prepared samples. The X-ray diffraction technique was used for the study of crystal quality and elemental composition analysis. The heterojunction analysis was performed using a parameter semiconductor analyser. CL and EL studies were carried out for the investigation of luminescence response of the prepared devices.
For the device fabrication, the bottom contacts are deposited by the evaporation of the 20-nm thickness of nickel and the 40-nm thickness of gold layers, respectively. Insulating layer of Shipley 1805 photoresist (Marlborough, MA, USA) was spin coated for the filling of vacant spaces between the nanorods, nanotubes and the growth-free surface of the GaN substrate. Reactive ion etching was used for exposing the top surface of the ZnO nanorods and nanotubes for the top contact of aluminium.
Results and discussion
In this study, n-type ZnO/p-type GaN- and n-type ZnO/NiO/p-type GaN-based white light-emitting diodes are designed using two known morphologies of ZnO including nanorods and nanotubes. ZnO nanorods were well aligned and perpendicular to the GaN substrate, and some of the samples were almost fully chemically etched into nanotubes. XRD study shows the c-axis-oriented growth of the ZnO crystal structure with the possible involvement of GaN at (002) crystal plane. Both the CL and EL intensities were significantly increased by inserting a thin layer of NiO at the interface between the n-type ZnO and the p-type GaN due to possible blocking of electron injections from the ZnO to the GaN. Using the NiO buffer layer, the confinement is created which helps in the development of efficient LEDs based on n-type ZnO/NiO/p-type GaN heterojunctions.
We are grateful to the University of Sindh, Pakistan, NED University, Pakistan and Linköping University, Sweden for their financial support.
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