Open Access

Retraction Note: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface

  • Amit Prakash,
  • Siddheswar Maikap,
  • Hsien-Chin Chiu,
  • Ta-Chang Tien and
  • Chao-Sung Lai
Nanoscale Research Letters20138:419

DOI: 10.1186/1556-276X-8-419

Received: 9 October 2013

Accepted: 9 October 2013

Published: 22 October 2013

We’re sorry, something doesn't seem to be working properly.

Please try refreshing the page. If that doesn't work, please contact us so we can address the problem.

Retraction

This article is retracted.

The journal editors would like to apologise for the early publication of the original article [1], which is being retracted as it was published prior to the completion of essential revisions.

The revised version of this article has now been published, and is available online [2].

Notes

References

  1. Prakash A, Maikap S, Chiu HC, Tien TC, Lai CS: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface. Nanoscale Research Letters 2013, 9: 152.View ArticleGoogle Scholar
  2. Prakash A, Maikap S, Chiu HC, Tien TC, Lai CS: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface. Nanoscale Research Letters 2014, 9: 125. 10.1186/1556-276X-9-125View ArticleGoogle Scholar

Copyright

© Prakash et al.; licensee Springer. 2013

This article is published under license to BioMed Central Ltd. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.