Retraction Note: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface

  • Amit Prakash,

    Affiliated with

    • Siddheswar Maikap,

      Affiliated with

      • Hsien-Chin Chiu,

        Affiliated with

        • Ta-Chang Tien and

          Affiliated with

          • Chao-Sung Lai

            Affiliated with

            Nanoscale Research Letters20138:419

            DOI: 10.1186/1556-276X-8-419

            Received: 9 October 2013

            Accepted: 9 October 2013

            Published: 22 October 2013

            The original article was published in Nanoscale Research Letters 2014 9:125

            Retraction

            This article is retracted.

            The journal editors would like to apologise for the early publication of the original article [1], which is being retracted as it was published prior to the completion of essential revisions.

            The revised version of this article has now been published, and is available online [2].

            Notes

            References

            1. Prakash A, Maikap S, Chiu HC, Tien TC, Lai CS: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface. Nanoscale Research Letters 2013, 9: 152.View Article
            2. Prakash A, Maikap S, Chiu HC, Tien TC, Lai CS: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface. Nanoscale Research Letters 2014, 9: 125. 10.1186/1556-276X-9-125View Article

            Copyright

            © Prakash et al.; licensee Springer. 2013

            This article is published under license to BioMed Central Ltd. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://​creativecommons.​org/​licenses/​by/​2.​0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.