Open Access

Retraction Note: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface

  • Amit Prakash,
  • Siddheswar Maikap,
  • Hsien-Chin Chiu,
  • Ta-Chang Tien and
  • Chao-Sung Lai
Nanoscale Research Letters20138:419

DOI: 10.1186/1556-276X-8-419

Received: 9 October 2013

Accepted: 9 October 2013

Published: 22 October 2013

The Nano Express to this article has been published in Nanoscale Research Letters 2014 9:125

Retraction

This article is retracted.

The journal editors would like to apologise for the early publication of the original article [1], which is being retracted as it was published prior to the completion of essential revisions.

The revised version of this article has now been published, and is available online [2].

Notes

References

  1. Prakash A, Maikap S, Chiu HC, Tien TC, Lai CS: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface. Nanoscale Research Letters 2013, 9: 152.View Article
  2. Prakash A, Maikap S, Chiu HC, Tien TC, Lai CS: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface. Nanoscale Research Letters 2014, 9: 125. 10.1186/1556-276X-9-125View Article

Copyright

© Prakash et al.; licensee Springer. 2013

This article is published under license to BioMed Central Ltd. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.