Annealing temperature effect on self-assembled Au droplets on Si (111)
© Sui et al.; licensee Springer. 2013
Received: 28 October 2013
Accepted: 12 November 2013
Published: 13 December 2013
We investigate the effect of annealing temperature on self-assembled Au droplets on Si (111). The annealing temperature is systematically varied while fixing other growth parameters such as deposition amount and annealing duration clearly to observe the annealing temperature effect. Self-assembled Au droplets are fabricated by annealing from 50°C to 850°C with 2-nm Au deposition for 30 s. With increased annealing temperatures, Au droplets show gradually increased height and diameter while the density of droplets progressively decreases. Self-assembled Au droplets with fine uniformity can be fabricated between 550°C and 800°C. While Au droplets become much larger with increased deposition amount, the extended annealing duration only mildly affects droplet size and density. The results are systematically analyzed with cross-sectional line profiles, Fourier filter transform power spectra, height histogram, surface area ratio, and size and density plots. This study can provide an aid point for the fabrication of nanowires on Si (111).
KeywordsAu droplets Annealing temperature Nanowires
Recently, nanoscale particles have drawn increasing attention. For example, gold particles, as a popular nanomaterial with outstanding optoelectronic properties, have been widely used in sensor applications by the enrichment of detection range and optimization and enhancement of sensitivity [1–4]. In addition, Au particles are also attractive based on their capacity to catalyze one-dimensional (1-D) nanostructures, namely nanopillars and nanowires with lots of remarkable properties via various epitaxial growth mechanisms [5–10]. Fabrications of diverse nanowires such as GaN, ZnO, InAs, GaAs, Si, and Ge have been demonstrated using Au droplets as catalyst [11–18]. Nonetheless, given the wide range of substrates utilized, Au droplets can be successfully utilized in the fabrication of the various nanowires and many elements utilized for substrates would diffuse into gold during the fabrications of nanowires [11–18]. The design and growth of nanowires including diameter, length, and density in many cases can be determined by the size, density, and configurations of Au droplets [17, 18]. From this point, the control of Au droplet is an essential step for designing desired nanowires [19–24]. As discussed, the properties of Au droplets and approaches to the fabrication of nanowires have been widely studied; however, up to date, the systematic study on the control of Au droplets is still rarely to be studied.
In this work, gold droplets were synthesized on Si (111) substrates by the systematic variation of annealing temperature in a pulsed laser deposition (PLD) system under a chamber vacuum of 1 × 10−4 Torr. To investigate the annealing temperature effect on the fabrication of self-assembled Au droplets, each growth was performed at 50°C, 100°C, 150°C, 250°C, 350°C, 550°C, 700°C, 800°C, 850°C, 900°C, and 950°C, respectively. Initially, 1-mm-thick singular 4-in. p-type Si (111) wafers were 1 × 1 cm2 diced by a wire-sawing machine and treated with a conventional RCA clean. Each sample is degassed at 850°C for 15 min under a chamber vacuum of 1 × 10−4 Torr, and subsequently, 2-nm-thick gold films were deposited in a plasma ion-coater chamber under a pressure of 1 × 10−1 Torr at a rate of 0.05 nm/s with 3-mA ionization current. For a systematic annealing, a computer-operated recipe was run and the ramping-up rate was at 2.3°C/s under 1 × 10−4 Torr. After reaching each target annealing temperature, 30 s of annealing time was given for each sample, and finally, the temperature was quenched down immediately after finishing each growth to minimize Ostwald ripening [19, 25]. The quenching process was kept identical for all samples. An atomic force microscope (AFM) was utilized for the surface morphology characterization, and XEI software was used for analyzing the obtained data.
Results and discussion
RMS surface roughness ( R q ) of self-assembled Au droplets at corresponding annealing temperature
In brief, the annealing temperature effect on the fabrication of self-assembled Au droplets on Si (111) was studied in terms of size, density, and uniformity with AFM images, line profiles, FFT power spectra, and histograms. In general, the dimensions of Au droplets including the average height and diameter were gradually increased with the increased annealing temperature. The expansion of dimensions was accompanied by the reduction in the average density. The Au droplets fabricated below 500°C showed somewhat poor uniformities as evidenced by the FFT spectra, and the uniformity was improved between 550°C and 800°C likely due to favorable surface diffusion of adatoms induced by sufficient thermal energy. At above 850°C, the Au droplets began melting due to the lower eutectic point of Au-Si alloy, and the melting got severe as temperature was increased. With an increased deposition amount, the size of Au droplets grew much larger and the density was significantly decreased. Meanwhile, the increased annealing duration showed minor effects on the droplet size and density. This study can find applications in the fabrication of nanowires on Si (111).
This work was supported by the National Research Foundation (NRF) of Korea (no. 2011-0030821 and 2013R1A1A1007118). This research was in part supported by the research grant of Kwangwoon University in 2013.
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