PZ received his BS degree in Physics and his PhD degree in optics from Fudan University, Shanghai, China, in 2000 and 2005, respectively. He is currently an associate professor in the School of Microelectronics, Fudan University. His research interests include fabrication and characterization of advanced metal-oxide-semiconductor field-effect transistors, advanced memory devices, and graphene device. LY received his BS degree and the MS degree in microelectronics from Fudan University, Shanghai, China, in 2009 and 2012, respectively. He is currently a 28-nm Graphics Design Engineer in Huali Microelectronics Corporation, Shanghai. His research interests include low-power circuit, memory and device design, and fabrication for the cutting edge integrated circuit technology. QQS received his BS degree in Physics and his MS degree in microelectronics and solid state electronics from Fudan University, Shanghai, China, in 2004 and 2009, respectively. He is currently an associate professor in the School of Microelectronics, Fudan University. His research interests include fabrication and characterization of advanced metal-oxide-semiconductor field-effect transistors, mainly high-k dielectric-based devices. He is also interested in design, fabrication, and characterization of advanced memory devices, such as resistive switching memory devices and Flash. PFW received his BS and MS degrees from Fudan University, Shanghai, China, in 1998 and 2001, respectively, and his Ph.D. degree from the Technical University of Munich, München, Germany, in 2003. Until 2004, he was with the Memory Division of the Infineon Technologies in Germany on the development and the process integration of novel memory devices. Since 2009, he has been a professor ins Fudan University. His research interests include design and fabrication of semiconductor devices and development of semiconductor fabrication technologies such as high-k gate dielectrics and copper/low-k integration. AQJ is presently with a professor in the School of Microelectronics, Fudan University. He received his Ph.D. degree in 1999 in Studies of the Nanostructural Materials from the Institute of Solid State Physics, Chinese Academy of Sciences (Hefei). Later, he started his postdoctoral researches in the Institute of Physics (Beijing) (1999 to 2000) and Cambridge University (2001 to 2006). His main researches include nanotechnologies of nonvolative random access memories, such as ferroelectric memory (FeRAM), phase-change memory (PCRAM), resistor memory (RRAM), and Flash memory on the basis of CMOS, as well as the relevant device physics, especially about ferroelectric and semiconductor theories. SJD is a professor in the School of Microelectronics, Fudan University. He received his Ph.D. degree in Microelectronic and Solid State Electronics from Fudan University in July, 2001. From October 2001 to November 2002, he was a Research Fellow of Alexander von Humboldt Foundation with the Department of Materials Science and Engineering, Kiel University in Germany. From February 2003 to December 2004, he was a Research Fellow with the Silicon Nano Device Lab, National University of Singapore. DWZ received his BS, MSc, and Ph.D. degrees in Electrical Engineering from Xi’an Jiaotong University, Xi’an, China, in 1988, 1991, and 1995, respectively. In 1997, he was an associate professor in Fudan University, Shanghai, China, where he has been a full professor since 1999 and is currently the dean of the Department of Microelectronics and the director of the Fudan–Novellus Interconnect Research Center. He has authored more than 200 referred archival publications and is the holder of 15 patents. More than 50 students have received their MSc or Ph.D. degrees under his supervision. His research interests include integrated circuit processing and technology, such as copper interconnect technology, atomic layer deposition of high-k materials, semiconductor materials and thin-film technology; new structure dynamic random access memory (RAM), Flash memory, and resistive RAM; and metal-oxide-semiconductor FET based on nanowire and nanotube and tunneling FET.