Field emission characteristics of zinc oxide nanowires synthesized by vapor-solid process
© Kuo and Lin; licensee Springer. 2014
Received: 23 December 2013
Accepted: 14 January 2014
Published: 11 February 2014
Vertically aligned ZnO nanowire (NW) arrays have been synthesized on silicon substrates by chemical vapor deposition. The growth of ZnO NWs may be dominated by vapor-solid nucleation mechanism. Morphological, structural, optical, and field emission characteristics can be modified by varying the growth time. For growth time that reaches 120 min, the length and diameter of ZnO NWs are 1.5 μm and 350 nm, respectively, and they also show preferential growth orientation along the c-axis. Room-temperature photoluminescence spectra exhibit a sharp UV emission and broad green emission, and the enhanced UV-to-green emission ratio with increasing growth time might originate from the reduced concentration of surface defects. Furthermore, strong alignment and uniform distribution of ZnO NWs can also effectively enhance the antireflection to reach the average reflectance of 5.7% in the visible region. The field emission measurement indicated that the growth time plays an important role in density- and morphology-controlled ZnO NWs, and thus, ZnO NWs are expected to be used in versatile optoelectronic devices.
KeywordsZnO nanowires 1D nanostructures Field emission Near band edge
Recently, semiconductor one-dimensional (1D) nanostructures have been attracting much attention in fundamental research and in potential applications for nanodevices. There are numerous studies on 1D nanostructures of Si, Ge, and III-V and also on oxide systems such as tin oxide (SnO2), silicon oxide (SiO2), indium tin oxide (ITO), zinc oxide (ZnO), and aluminum oxide (Al2O3). Among them, ZnO has been expected to be one of the most important optoelectronic materials with piezoelectricity, biocompatibility, wide bandgap (approximately 3.37 eV), and large exciton binding energy (approximately 60 meV) at room temperature [1, 2]. Due to their exceptional physical and chemical properties, 1D ZnO nanostructures, such as nanorods, nanowires (NWs), nanotubes, and nanoneedles, are very attractive as well. Arrays of vertically aligned ZnO nanostructures are considered to be a promising candidate for applications in blue UV light emitters, field emission devices, high-efficiency photonic devices, photovoltaic devices, and biosensors [3–10]. So far, various kinds of high-quality and well-aligned 1D ZnO nanostructures have been realized using vapor-phase transport, metal-organic vapor-phase epitaxy, pulsed laser deposition, and wet chemistry methods [11–15]. Vapor–liquid-solid (VLS) and vapor-solid (VS) processes have been employed by many researchers for the growth of 1D ZnO nanostructures because of its simple procedure and relatively low cost. The VLS model has been used to explain the growth mechanism at high temperatures, while the VS model dominates at low temperatures. From the viewpoint of applications, a high-temperature process might damage or deteriorate optoelectronic devices. A low-temperature VS process would be more suitable for the integration of 1D ZnO-based devices. Besides, the important characteristic of the field emission of ZnO NWs is rarely investigated, which could be a candidate for field electron emitters due to their high aspect ratios, negative electron affinity, and mechanical and chemical stability. In this paper, we report a simple synthesis of ZnO NWs on a silicon substrate using the VS process at a relatively low growth temperature (550°C).
ZnO NWs were synthesized in a horizontal tube furnace system equipped with a 90-cm-long quartz tube, three-zone heating system, gas inlet, and pump out. A 1 × 1 cm-sized, n-type Si(100) has been used as the deposited substrate. Before being loaded, the silicon substrate was etched using hydrofluoric acid and cleaned ultrasonically with ethanol and deionized water. After finishing substrate pretreatment, the silicon substrates were coated with 8-nm-thick Au films as buffer layer by a DC sputter. An alumina boat loaded with zinc powder (100 mesh, 99.99%) was placed at the center of the quartz tube, and the silicon substrates were placed a few centimeters downstream from the source. After loading, the quartz tube was heated up to 550°C under a constant high-purity Ar gas (150 sccm, 99.99%). The temperature was held at the peak temperature for 60, 90, 120 min, respectively. After evaporation, the system was naturally cooled down to room temperature under flowing argon gas.
The structure of as-grown samples was analyzed by X-ray diffraction (XRD; D5005, Siemens AG, Munich, Germany) using CuKα1 radiation. The morphology and microstructure were investigated by scanning electron microscopy (SEM; S-4300, Hitachi, Tokyo, Japan). Photoluminescence (PL) measurement was performed at room temperature using λ = 325 nm of excitation of a He-Cd laser source (IK3401R-F, Kimmon Koha Co., Ltd., Tokyo, Japan). Field emission was measured at room temperature in a vacuum ambient of 3.5 × 105 Torr. The distance between the anode and the tip of the ZnO NWs was 18 μm, and the emission current was monitored with a Keithley 237 electrometer (Cleveland, OH, USA) and recorded at 1.0-s intervals by applying a sweep step of 10 V.
Results and discussion
where J is the current density, V is the applied voltage, β is the work function, d is the emitting distance, β is the field enhancement factor, and a and b are the constants. As shown in the inset of Figure 5, factor β in the FN equation represents the degree of field emission enhancement. For a nanostructured emitter, the β value is related to its work function, morphology, crystallinity, conductivity, and density. By assuming 5.2 eV as the work function value for ZnO NWs, field enhancement factors were calculated to be 642, 492, 396 for growth times of 60, 90, and 120 min, respectively [19–21]. The field emission properties of ZnO NWs are expected to improve as their length is increased, which can be qualitatively explained by the increase in the field enhancement factor β for long NWs. However, our experimental results contradict the anticipation. The phenomenon can be ascribed to the compensation by the increase of their diameter. Based on our experimental results, the growth time plays an important role in density and morphology control of ZnO NWs and thus modifies the optoelectronic properties for versatile devices.
In summary, the vertical arrays of well-aligned c-axis orientation ZnO NWs have been synthesized on silicon substrate by VS growth mechanism at a relatively low growth temperature. By varying the growth time, we can adjust the areal density, length, and diameter of ZnO NWs and modify the structural and optoelectronic properties accordingly. PL spectra measured at room temperature exhibit a sharp UV peak and broad green band, corresponding to the NBE and defect-related emissions, respectively. When the growth time increased, the average diameter of NWs became larger and thus the surface-to-volume ratio became lower. Therefore, higher surface states of ZnO NWs with smaller diameters can be responsible for the origin of enhanced green emission. ZnO NWs with strong alignment and uniform distribution can also minimize the reflectance to 5.7% in the visible region. In addition, field emission features revealed that the growth time plays an important role in density- and morphology-controlled ZnO NWs. It is reasonable to expect that the ZnO NWs can be modified to meet the requirements for versatile optoelectronic devices.
Scanning electron microscopy
This work was supported by the Green Technology Research Center of Chang Gung University and the National Science Council (NSC) of Taiwan under contract numbers NSC100-2815-C-155-013-E, NSC100-2112-M-182-004, and NSC101-2112-M-182-003-MY3.
- Jiang CY, Sun XW, Lo GQ, Kwong DL, Wang JX: Improved dye-sensitized solar cells with a ZnO-nanoflower photoanode. Appl Phys Lett 2007, 90: 263501. 10.1063/1.2751588View ArticleGoogle Scholar
- Xu L, Shen H, Li X, Zhu R: Enhanced ultraviolet emission from ZnO thin film covered by TiO2 nanoparticles. Chin Opt Lett 2009, 7: 953–955. 10.3788/COL20090710.0953View ArticleGoogle Scholar
- Huang MH, Mao S, Feick H, Yan H, Wu Y, Kind H, Weber E, Russo R, Yang P: Room-temperature ultraviolet nanowire nanolasers. Science 1897, 2001: 292.Google Scholar
- Manoharan MP, Desai AV, Neely G, Haque MA: Synthesis and elastic characterization of zinc oxide nanowires. J Nanomater 2008, 2008: 849745.View ArticleGoogle Scholar
- Ng HT, Han J, Yamada T, Nguyen P, Chen YP, Meyyappan M: Single crystal nanowire vertical surround-gate field-effect transistor. Nano Lett 2004, 4: 1247. 10.1021/nl049461zView ArticleGoogle Scholar
- Heo YW, Tien LC, Kwon Y, Norton DP, Pearton SJ, Kang BS, Ren F: Depletion-mode ZnO nanowire field-effect transistor. Appl Phys Lett 2004, 85: 2274. 10.1063/1.1794351View ArticleGoogle Scholar
- Lee CH, Yoo J, Doh YJ, Yi GC: ZnO/Mg0.2Zn0.8O coaxial nanorod heterostructures for high-performance electronic nanodevice applications. Appl Phys Lett 2009, 94: 043504. 10.1063/1.3075606View ArticleGoogle Scholar
- Li QH, Liang YX, Wan Q, Wang TH: Oxygen sensing characteristics of individual ZnO nanowire transistors. Appl Phys Lett 2004, 85: 6389. 10.1063/1.1840116View ArticleGoogle Scholar
- Weissenberger D, Gerthsen D, Reiser A, Prinz GM, Feneberg M, Thonke K, Zhou H, Sartor J, Fallert J, Klingshirn C, Kalt H: Influence of the measurement procedure on the field-effect dependent conductivity of ZnO nanorods. Appl Phys Lett 2009, 94: 042107. 10.1063/1.3075849View ArticleGoogle Scholar
- Wang XD, Song JH, Liu J, Wang ZL: Direct-Current nanogenerator driven by ultrasonic waves. Science 2007, 316: 102. 10.1126/science.1139366View ArticleGoogle Scholar
- Pan ZW, Dai ZR, Wang ZL: Nanobelts of semiconducting oxides. Science 1947, 2001: 291.Google Scholar
- Wu JJ, Liu SC: Low-temperature growth of well-aligned ZnO nanorods by chemical vapor deposition. Adv Mater 2002, 14: 215. 10.1002/1521-4095(20020205)14:3<215::AID-ADMA215>3.0.CO;2-JView ArticleGoogle Scholar
- Park WI, Kim DH, Jung SW, Yi GC: Metalorganic vapor-phase epitaxial growth of vertically well-aligned ZnO nanorods. Appl Phys Lett 2002, 80: 4232. 10.1063/1.1482800View ArticleGoogle Scholar
- Hartanto AB, Ning X, Nakata Y, Okada T: Growth mechanism of ZnO nanorods from nanoparticles formed in a laser ablation plume. Appl Phys A 2004, 78: 299.View ArticleGoogle Scholar
- Vayssieres L, Keis K, Lindquist SE, Hagfeldt A: Purpose-built anisotropic metal oxide material: 3D highly oriented microrod array of ZnO. J Phys Chem B 2001, 105: 3350. 10.1021/jp010026sView ArticleGoogle Scholar
- Hu JW, Bando Y: Growth and optical properties of single-crystal tubular ZnO whiskers. Appl Phys Lett 2003, 82: 1401. 10.1063/1.1558899View ArticleGoogle Scholar
- Lee YJ, Ruby DS, Peters DW, McKenzie BB, Hsu JWP: ZnO nanostructures as efficient antireflection layers in solar cells. Nano Lett 2008, 8: 1501–1505. 10.1021/nl080659jView ArticleGoogle Scholar
- Lee C, Bae SY, Mobasser S, Manohara H: A novel silicon nanotips antireflection surface for the micro sun sensor. Nano Lett 2005, 5: 2438–2442. 10.1021/nl0517161View ArticleGoogle Scholar
- Bai XD, Wang EG, Gao PX, Wang ZL: Measuring the work function at a nanobelt tip and at a nanoparticle surface. Nano Lett 2003, 3: 1147. 10.1021/nl034342pView ArticleGoogle Scholar
- Hsu CL, Su CW, Hsueh TJ: Enhanced field emission of Al-doped ZnO nanowires grown on a flexible polyimide substrate with UV exposure. RSC Adv 2014, 4: 2980–2983. 10.1039/c3ra45201hView ArticleGoogle Scholar
- Mosquera E, Bernal J, Zarate RA, Mendoza F, Katiyar RS, Morell G: Growth and electron field-emission of single-crystalline ZnO nanowires. Mater Lett 2013, 93: 326–329.View ArticleGoogle Scholar
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