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Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation

Abstract

Self-assembled GaInNAs quantum dots (QDs) were grown on GaAs (001) substrate using solid-source molecular-beam epitaxy (SSMBE) equipped with a radio-frequency nitrogen plasma source. The GaInNAs QD growth characteristics were extensively investigated using atomic-force microscopy (AFM), photoluminescence (PL), and transmission electron microscopy (TEM) measurements. Self-assembled GaInNAs/GaAsN single layer QD lasers grown using SSMBE have been fabricated and characterized. The laser worked under continuous wave (CW) operation at room temperature (RT) with emission wavelength of 1175.86 nm. Temperature-dependent measurements have been carried out on the GaInNAs QD lasers. The lowest obtained threshold current density in this work is 1.05 kA/cm2from a GaInNAs QD laser (50 × 1,700 µm2) at 10 °C. High-temperature operation up to 65 °C was demonstrated from an unbonded GaInNAs QD laser (50 × 1,060 µm2), with high characteristic temperature of 79.4 K in the temperature range of 10–60 °C.

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References

  1. 1.

    Dutta NK, Nelson RJ: Appl. Phys. Lett. 1981, 38: 407. COI number [1:CAS:528:DyaL3MXitVSnt78%3D] 10.1063/1.92380

    Article  Google Scholar 

  2. 2.

    Yablonovitch E, Kane OE: Lightwave J. Technol. 1986, 4: 504. 10.1109/JLT.1986.1074751

    Article  Google Scholar 

  3. 3.

    Kondow M, Uomi K, Niwa A, Kitatani T, Watahiki S, Yazawa Y: Jpn. J. Appl. Phys. 1996, 35: 1273. COI number [1:CAS:528:DyaK28XisFSqtbg%3D] 10.1143/JJAP.35.1273

    Article  Google Scholar 

  4. 4.

    Kondow M, Kitatani T, Nakatsuka S, Larson MC, Nakahara K, Yazawa Y, Okai M, Uomi K: IEEE J. Sel. Top. Quantum Electron. 1997, 3: 719. COI number [1:CAS:528:DyaK2sXntVKntr0%3D] 10.1109/2944.640627

    Article  Google Scholar 

  5. 5.

    Harris JS: IEEE J. Sel. Top. Quantum Electron. 2000, 6: 1145. COI number [1:CAS:528:DC%2BD3MXhs12rurk%3D] 10.1109/2944.902163

    Article  Google Scholar 

  6. 6.

    Harris JS: Semicond. Sci. Technol. 2002, 17: 880. COI number [1:CAS:528:DC%2BD38Xms1yqu74%3D] 10.1088/0268-1242/17/8/317

    Article  Google Scholar 

  7. 7.

    Ha W, Gambin V, Wistey M, Bank S, Kim S, Harris JS: IEEE Photon. Technol. Lett. 2002, 14: 591. 10.1109/68.998694

    Article  Google Scholar 

  8. 8.

    Fehse R, Tomic S, Adams AR, Sweeney SJ, O’Reilly EP, Andreev A, Riechert H: IEEE J. Sel. Top. Quantum Electron. 2002, 8: 801. COI number [1:CAS:528:DC%2BD38XotVGltLk%3D] 10.1109/JSTQE.2002.801684

    Article  Google Scholar 

  9. 9.

    Kovsh AR, Wang JS, Hsiao RS, Chen LP, Livshits DA, Lin G, Ustinov VM, Chi JY: Electron. Lett. 2003, 39: 1276. COI number [1:CAS:528:DC%2BD3sXhtVSqsrrJ] 10.1049/el:20031085

    Article  Google Scholar 

  10. 10.

    Gollub D, Moses S, Forchel A: IEEE J. Quantum Electron. 2004, 40: 337. COI number [1:CAS:528:DC%2BD2cXivFCnu74%3D] 10.1109/JQE.2004.825112

    Article  Google Scholar 

  11. 11.

    Wang SM, Wei YQ, Wang XD, Zhao QX, Sadeghi M, Larsson A: J. Cryst. Growth. 2005, 278: 734. COI number [1:CAS:528:DC%2BD2MXjsVeksbs%3D] 10.1016/j.jcrysgro.2004.12.150

    Article  Google Scholar 

  12. 12.

    Hierro A, Ulloa JM, Calleja E, Damilano B, Barjon J, Duboz J-Y, Massies J: IEEE Photon. Technol. Lett. 2005, 17: 1142. COI number [1:CAS:528:DC%2BD2MXpsVWgtbk%3D] 10.1109/LPT.2005.846567

    Article  Google Scholar 

  13. 13.

    Dagens B, Martinez A, Make D, Gouezigou OL, Provost JG, Sallet V, Merghem K, Harmand JC, Ramdane A, Thedrez B: IEEE Photon. Technol. Lett. 2005, 17: 971. COI number [1:CAS:528:DC%2BD2MXpsVagsLo%3D] 10.1109/LPT.2005.845718

    Article  Google Scholar 

  14. 14.

    Tansu N, Yeh J-Y, Mawst LJ: IEEE J. Select. Top. Quantum Electron. 2003, 9: 1220. COI number [1:CAS:528:DC%2BD2cXhsFaktrg%3D] 10.1109/JSTQE.2003.820911

    Article  Google Scholar 

  15. 15.

    Yeh JY, Tansu N, Mawst LJ: IEEE Photon. Technol. Lett. 2004, 16: 741. COI number [1:CAS:528:DC%2BD2MXpsVWit7s%3D] 10.1109/LPT.2004.823715

    Article  Google Scholar 

  16. 16.

    Liu CY, Yoon SF, Wang SZ, Fan WJ, Qu Y, Yuan S: IEEE Photon. Technol. Lett. 2004, 16: 2409. COI number [1:CAS:528:DC%2BD2MXovV2gtrg%3D] 10.1109/LPT.2004.835214

    Article  Google Scholar 

  17. 17.

    Liu CY, Qu Y, Yuan S, Yoon SF: Appl. Phys. Lett. 2004, 85: 4594. COI number [1:CAS:528:DC%2BD2cXhtVSlsLbF] 10.1063/1.1824180

    Article  Google Scholar 

  18. 18.

    Tansu N, Mawst LJ: J. Appl. Phys. 2005, 97: 054502. COI number [1:CAS:528:DC%2BD2MXislehs7s%3D] 10.1063/1.1852697

    Article  Google Scholar 

  19. 19.

    Yamada M, Anan T, Hatakeyama H, Tokutome K, Suzuki N, Nakamura T, Nishi K: IEEE Photon. Technol. Lett. 2005, 17: 950. COI number [1:CAS:528:DC%2BD2MXpsVags7o%3D] 10.1109/LPT.2005.844325

    Article  Google Scholar 

  20. 20.

    Arakawa Y, Sakaki H: Appl. Phys. Lett. 1982, 40: 939. COI number [1:CAS:528:DyaL38XkvVansrg%3D] 10.1063/1.92959

    Article  Google Scholar 

  21. 21.

    Asada M, Miyamato Y, Suematsu Y: IEEE J. Quantum Electron. 1986, 22: 1915. 10.1109/JQE.1986.1073149

    Article  Google Scholar 

  22. 22.

    Miyamoto T, Makino S, Ikenaga Y, Ohta M, Koyama F: IEE Proce. Optoelectr. 2003, 150: 59. COI number [1:CAS:528:DC%2BD3sXjsVymu7o%3D] 10.1049/ip-opt:20030038

    Article  Google Scholar 

  23. 23.

    Sopanen M, Xin HP, Tu CW: Appl. Phys. Lett. 2000, 76: 994. COI number [1:CAS:528:DC%2BD3cXhtlShsrc%3D] 10.1063/1.125917

    Article  Google Scholar 

  24. 24.

    Volovik BV, Kovsh AR, Passenberg W, Kuenzel H, Grote N, Cherkashin NA, Musikhin YG, ledentsov NN, Bimberg D, Ustinov VM: Semicond. Sci. Technol. 2001, 16: 186. COI number [1:CAS:528:DC%2BD3MXisVyisb0%3D] 10.1088/0268-1242/16/3/312

    Article  Google Scholar 

  25. 25.

    Sun ZZ, Yoon SF, Yew KC, Loke WK, Wang SZ, Ng TK: J. Gryst. Growth. 2002, 242: 109. COI number [1:CAS:528:DC%2BD38XksFKgtrs%3D] 10.1016/S0022-0248(02)01373-8

    Article  Google Scholar 

  26. 26.

    Nishikawa A, Hong YG, Tu CW: Phys. Stat. Solidi B. 2003, 240: 310. COI number [1:CAS:528:DC%2BD3sXpsFahur8%3D] 10.1002/pssb.200303258

    Article  Google Scholar 

  27. 27.

    Yew KC, Yoon SF, Sun ZZ, Wang SZ: J. Cryst. Growth. 2003, 247: 279. COI number [1:CAS:528:DC%2BD38XptlWhtbo%3D] 10.1016/S0022-0248(02)01987-5

    Article  Google Scholar 

  28. 28.

    Sun ZZ, Yoon SF, Yew KC: J. Cryst. Growth. 2003, 259: 40. COI number [1:CAS:528:DC%2BD3sXotVCnt7k%3D] 10.1016/S0022-0248(03)01580-X

    Article  Google Scholar 

  29. 29.

    Yew KC, Yoon SF, Sun ZZ: J. Vac. Sci. Technol. B. 2003, 21: 2428. COI number [1:CAS:528:DC%2BD2cXptFGntQ%3D%3D] 10.1116/1.1627335

    Article  Google Scholar 

  30. 30.

    Sun ZZ, Yoon SF, Yew KC, Bo BX, Du AY, Tung CH: Appl. Phys. Lett. 2004, 85: 1469. COI number [1:CAS:528:DC%2BD2cXntVKmtrc%3D] 10.1063/1.1789236

    Article  Google Scholar 

  31. 31.

    Makino S, Miyamoto T, Kageyama T, Nishiyama N, Koyama F, Iga K: Cryst J. Growth. 2000, 221: 561. COI number [1:CAS:528:DC%2BD3cXovFentrs%3D] 10.1016/S0022-0248(00)00778-8

    Article  Google Scholar 

  32. 32.

    Miyamoto T, Kageyama T, Makino S, Ikenaga Y, Koyama F, Iga K: Proce. SPIE Int. Soc. Optical Eng. 2001, 4283: 24. COI number [1:CAS:528:DC%2BD3MXmvVOls7c%3D]

    Google Scholar 

  33. 33.

    Makino S, Miyamoto T, Kageyama T, Ikenaga Y, Koyama F, Iga K: Jpn. J. Appl. Phys. 2002, 41: 953. COI number [1:CAS:528:DC%2BD38Xit1CqtL4%3D] 10.1143/JJAP.41.953

    Article  Google Scholar 

  34. 34.

    Makino S, Miyamoto T, Ohta M, Kageyama T, Ikenaga Y, Koyama F, Iga K: J. Cryst. Growth. 2003, 251: 372. COI number [1:CAS:528:DC%2BD3sXitlWlsb0%3D] 10.1016/S0022-0248(02)02181-4

    Article  Google Scholar 

  35. 35.

    Hakkarainen T, Toivonen J, Sopanen M, Lipsanen H: Appl. Phys. Lett. 2001, 79: 3932. COI number [1:CAS:528:DC%2BD3MXoslKgu7s%3D] 10.1063/1.1425082

    Article  Google Scholar 

  36. 36.

    Daniltsev VM, Drozdov MN, Drozdov YuN, Gaponova DM, Khrykin OI, Murel AV, Shashkin VI, Vostrokov NV: J. Cryst. Growth. 2003, 248: 343. COI number [1:CAS:528:DC%2BD38XpslShur4%3D] 10.1016/S0022-0248(02)01923-1

    Article  Google Scholar 

  37. 37.

    Jang YD, Yim JS, Lee UH, Lee D, Jang JW, Park KH, Jeong WG, Lee JH, Oh DK: Phys. E. 2003, 17: 127. COI number [1:CAS:528:DC%2BD3sXivVyjur4%3D] 10.1016/S1386-9477(02)00744-0

    Article  Google Scholar 

  38. 38.

    Gao Q, Buda M, Tan HH, Jagadish C: Electrochem. Solid-State Lett. 2005, 8: G57. COI number [1:CAS:528:DC%2BD2MXkslejug%3D%3D] 10.1149/1.1848293

    Article  Google Scholar 

  39. 39.

    Wessels BW, Vac J: Sci. Technol. B. 1997, 15: 1056. COI number [1:CAS:528:DyaK2sXlsVymsLg%3D] 10.1116/1.589392

    Article  Google Scholar 

  40. 40.

    Petroff PM, DenBaars SP: Superlattices Microst. 1994, 15: 15. COI number [1:CAS:528:DyaK2MXjt1Gjsrc%3D] 10.1006/spmi.1994.1004

    Article  Google Scholar 

  41. 41.

    Z.Z. Sun, S.F. Yoon, K.C. Yew, B.X. Bo, Mat. Res. Soc. Symp. Proc. 794 T3.31.1, Boston (2003)

    Article  Google Scholar 

  42. 42.

    Xin HP, Kavanagh KL, Zhu ZQ, Tu CW: Appl. Phys. Lett. 1999, 74: 2337. COI number [1:CAS:528:DyaK1MXit1yiu7w%3D] 10.1063/1.123843

    Article  Google Scholar 

  43. 43.

    Ballet P, Gilet P, Grenouillet L, Duvaut P, Feuillet G, Million A: Mat. Res. Soc. Symp. Proc. 2001, 642: J3.33.

    Google Scholar 

  44. 44.

    Nishikawa A, Hong YG, Tu CW: Physica Status Solidi B. 2003, 240: 310. COI number [1:CAS:528:DC%2BD3sXpsFahur8%3D] 10.1002/pssb.200303258

    Article  Google Scholar 

  45. 45.

    A. Nishikawa, Y.G. Hong, C.W. Tu, 2003 International Conference Indium Phosphide and Related Materials. Conference Proceedings, ThB 1. 7, 359 (2003)

    Google Scholar 

  46. 46.

    Nishi K, Saito H, Sugou S, Lee JS: Appl. Phys. Lett. 1999, 74: 1112. 10.1063/1.123459

    Article  Google Scholar 

  47. 47.

    Ahopelto J, Lipsanen H, Sopanen M, Koljonen T, Niemi HE-M: Appl. Phys. Lett. 1994, 65: 1662. 10.1063/1.112903

    Article  Google Scholar 

  48. 48.

    White JK, Moloney JV: IEEE J. Select. Top. Quantum Electron. 2003, 9: 816. COI number [1:CAS:528:DC%2BD3sXpslSit78%3D] 10.1109/JSTQE.2003.819409

    Article  Google Scholar 

  49. 49.

    Huffaker DL, Park G, Zou Z, Shchekin OB, Deppe DG: Appl. Phys. Lett. 1998, 73: 2564. COI number [1:CAS:528:DyaK1cXmvVSis7Y%3D] 10.1063/1.122534

    Article  Google Scholar 

  50. 50.

    Park G, Huffaker DL, Zou Z, Shckekin OB, Deppe DG: IEEE Photon. Technol. Lett. 1999, 11: 301. 10.1109/68.748215

    Article  Google Scholar 

  51. 51.

    Mukai K, Nakata Y, Otsubo K, Sugawara M, Yokoyama N, Ishikawa H: IEEE J. Quantum Electron. 2000, 36: 472. COI number [1:CAS:528:DC%2BD3cXisVSntrk%3D] 10.1109/3.831025

    Article  Google Scholar 

  52. 52.

    Shchekin OB, Deppe DG: IEEE Photon. Technol. Lett. 2002, 14: 1231. 10.1109/LPT.2002.801597

    Article  Google Scholar 

  53. 53.

    Kovsh AR, Maleev NA, Zhukov AE, Mikhrin SS, Vasilev AR, Shemyakov YM, Maximov MV, Livshits DA, Ustinov V, Alferov ZhI, Ledentsov NN, Bimberg D: Electron. Lett. 2002, 38: 1104. COI number [1:CAS:528:DC%2BD38XoslWjtLw%3D] 10.1049/el:20020793

    Article  Google Scholar 

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Acknowledgments

The authors are grateful to A*STAR for providing financial support in this research through the ONFIG-II program. TEM support from Tung Chih-Hang, Du An Yan and Doan My The of the Institute of Microelectronics, Singapore, as well as discussions with Prof. B.X. Bo of Changchun University of Science and Technology, Dr Mei Ting, Nie Dong, and Dr Tong Cunzhu of the School of Electrical and Electronic Engineering, Nanyang Technological University, is acknowledged.

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Correspondence to S. F. Yoon.

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Yoon, S.F., Liu, C.Y., Sun, Z.Z. et al. Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation. Nanoscale Res Lett 1, 20 (2006). https://doi.org/10.1007/s11671-006-9009-5

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Keywords

  • GaInNAs
  • Quantum dot
  • Laser diodes
  • Molecular beam epitaxy (MBE)