Figure 3From: Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers P–I–V characteristics of a 2 × 2,000 μm² RWG InAs QD laser in CW operation. The output power is obtained from the front as-cleaved facet. Inset shows the lasing spectrum from an InAs QD laser (50 × 5,000 μm2). The laser showed ground state lasing from 25 °C up to 100 °C with the injection current up to 1 ABack to article page