Figure 4From: Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers P–I characteristics of a 2 × 2,000 μm² RWG InAs QD laser in pulsed operation (1μs, duty cycle = 1%) at 20 °C. Inset shows the lateral far-field pattern at different injection current levels in pulsed mode (1 μs, duty cycle = 1%) at 20 °CBack to article page