Figure 3From: Binding Energy of Hydrogen-Like Impurities in Quantum Well Wires of InSb/GaAs in a Magnetic FieldThe binding energy of the ground state of hydrogen-like impurity (in units of R *) as a function of B (1, 1′—y = 0.4; 2, 2′—y= 0.2), when impurity center is localized on the wire axis: 1,2—for the InSb/GaAs quantum wire; 1′,2′—for semiconductor wire with standard dispersion law GaAs/AlAsBack to article page