Figure 11
From: Strategies for Controlled Placement of Nanoscale Building Blocks
Charge writing and sensing with nanoscale resolution. (A) Schematic of the experimental setup. (B) KFM images of high areal density (∼500 Gbit/in2) charge bits injected into an NOS (30 Å Si3N4/22Å SiO2/Si) ultrathin film. The darker and brighter regions were injected with electrons and holes, respectively. (C) KFM image and cross-sectional KFM line profile of charge bits. (Reprinted with permission from Reference [139]. Copyright 2006 Wiley-VCH.)