Figure 9From: Electronic Structure of a Hydrogenic Acceptor Impurity in Semiconductor Nano-structuresThe binding energy as a function of the impurity position with the spherical QD radius of R 0 = 5 nm (a), with the cubic QD side length W = 10 nm (b), and the cylindrical QD radius and height W equal to 5 nm (c). The impurity positions of O, A, B and C in (b) and (c) are indicated on the inserted QD figure, respectivelyBack to article page