Figure 30From: Wettability Switching Techniques on Superhydrophobic SurfacesSEM images of silicon nanowires grown on a silicon wafer coated with a thin gold layer (4 nm) at 500 °C (a) P = 0.1 T, (b) P = 0.4 T. The silane flow is of 40 sccm, the time of growth is 60 minBack to article page