Table 1 Growth conditions of silicon nanowires (Q = 40 sccm, T = 500 °C)
From: Wettability Switching Techniques on Superhydrophobic Surfaces
No. | Time (min) | Pressure (T) | Length (μm) |
|---|---|---|---|
1 | 10 | 0.1 | 1 |
2 | 10 | 0.4 | 1 |
3 | 20 | 0.1 | 2.5 |
4 | 20 | 0.4 | 15 |
5 | 40 | 0.1 | 8 |
6 | 40 | 0.4 | 35 |
7 | 60 | 0.1 | 7 |
8 | 60 | 0.4 | 30 |