Transient Photoinduced Absorption in Ultrathin As-grown Nanocrystalline Silicon Films

Table 1 Fitting parameters obtained from the experimental data of Fig. 2 using a three exponential decay relaxation model

	450 nm	550 nm	650 nm	980 nm
5-nm film
A	0.12	0.42	0.61	0.72
τ₁	3.15	2.42	1.02	0.72
B	0.43	0.20	0.24	0.24
τ₂	27.20	17.54	9.22	3.78
C	0.44	0.38	0.15	0.04
τ₃	439.55	398.5	330.58	255.48
15-nm film
A	0.39	0.38	0.33	0.36
τ₁	6.97	1.09	0.44	0.70
B	0.15	0.23	0.46	0.56
τ₂	47.59	21.81	8.66	7.61
C	0.46	0.39	0.21	0.08
τ₃	981.40	709.59	542.46	237.27
30-nm film
A	0.12	0.27	0.35	0.57
τ₁	137.57	0.45	0.41	0.68
B	0.34	0.25	0.38	0.34
τ₂	1998.83	16.39	8.05	7.27
C	0.54	0.48	0.27	0.09
τ₃	2258.35	968.06	816.28	336.30