Table 1 Data used in calculations for determining quantities presented in Figs. 3–5
From: Deep Level Transient Spectroscopy in Quantum Dot Characterization
Average binding energy,s- electrons | 125 meV |
Standard deviation | 13 meV |
Average binding energy,p-electrons | 90 meV |
Standard deviation | 9 meV |
Capture cross sections,s- electrons | 10−13 cm2 |
Capture cross sections,p-electrons with one electron ins- shell | 10−10 cm2 |
Capture cross section,p-electron with no electron ins-shell | 5 × 10−10 cm2 |
Time forp tos electron relaxation (t r ) | 10−12 s |
GaAs doping level in depletion region | 1.4 × 1016 cm−3 |