Scanned Probe Oxidation onp-GaAs(100) Surface with an Atomic Force Microscopy

Table 1 Characteristics of AFM anodic oxidation-fabricated oxide nanodots in the present work with comparisons to the results previously reported on the GaAs surface

Probe type	Substrate	Oxide height (nm)	Voltage type	Relative humidity (%)	AFM mode
Conventional Pt-coated Si probe	p-GaAs	~6.3	DC	70	NC [23]
	p-GaAs	~5.2	DC	55	NC [#]
	n ⁺-GaAs	~4.1	DC	40–50	C [24]
	n ⁺-GaAs	~5	AC	40–50	C [24]
	p-GaAs	~3.4	AC	55	NC [#]
CNT-attached probe	p-GaAs	~5.6	DC	55	NC [#]
CNT-attached probe	p-GaAs	~6.4	AC	55	NC [#]