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Table 1 Characteristics of AFM anodic oxidation-fabricated oxide nanodots in the present work with comparisons to the results previously reported on the GaAs surface

From: Scanned Probe Oxidation onp-GaAs(100) Surface with an Atomic Force Microscopy

Probe type Substrate Oxide height (nm) Voltage type Relative humidity (%) AFM mode
Conventional Pt-coated Si probe p-GaAs ~6.3 DC 70 NC [23]
p-GaAs ~5.2 DC 55 NC [#]
n +-GaAs ~4.1 DC 40–50 C [24]
n +-GaAs ~5 AC 40–50 C [24]
p-GaAs ~3.4 AC 55 NC [#]
CNT-attached probe p-GaAs ~5.6 DC 55 NC [#]
p-GaAs ~6.4 AC 55 NC [#]
  1. C: Contact mode; NC: Noncontact mode
  2. [#]: The present work