Figure 3From: Surface-Related States in Oxidized Silicon Nanocrystals Enhance Carrier Relaxation and Inhibit Auger RecombinationTransient PA measurements for the Si-NCs at different excitation photon energies (a) 4.13 eV, (b) 3.5 eV, and (c) 3.1 eV. The Si-NC sample was probed with a super continuum white light with photon energies ranging between 2.75 and 1.26 eVBack to article page