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Figure 4 | Nanoscale Research Letters

Figure 4

From: Surface-Related States in Oxidized Silicon Nanocrystals Enhance Carrier Relaxation and Inhibit Auger Recombination

Figure 4

Transient PA intensity measurements for the Si-NCs at 4.13 eV excitation and probe at 2.75 eV. The measurements were taken at 250, 125, 25, and 12.5 μJ/cm2corresponding to an estimation of 20, 10, 2, and 1 carriers/NC. The inset shows the normalized data depicting the same temporal behavior for all intensities as well as the linear behavior of the maximum absorption changes

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