Skip to main content
Account

Table 1 Values of C’s [19] and K’s (at 100 K) of zincblende InAs and GaAs bulk materials

From: Effects of Shape and Strain Distribution of Quantum Dots on Optical Transition in the Quantum Dot Infrared Photodetectors

 

InAs

GaAs

C 11(GPa)

83.29

122.1

C 12(GPa)

45.26

56.6

C 44(GPa)

39.59

60.0

K r (GPaÅ)

170.13

215.09

K Ω(GPaÅ)

9.59

15.41

K rr (GPaÅ)

59.315

74.85

Navigation