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Table 1 Values of C’s [19] and K’s (at 100 K) of zincblende InAs and GaAs bulk materials

From: Effects of Shape and Strain Distribution of Quantum Dots on Optical Transition in the Quantum Dot Infrared Photodetectors

  InAs GaAs
C 11(GPa) 83.29 122.1
C 12(GPa) 45.26 56.6
C 44(GPa) 39.59 60.0
K r (GPaÅ) 170.13 215.09
K Ω(GPaÅ) 9.59 15.41
K rr (GPaÅ) 59.315 74.85