Figure 4From: Ultrafast Carrier Relaxation in InN Nanowires Grown by Reactive Vapor TransportA schematic diagram of a model explaining femtosecond pulse excitation at 3.1 eV (see vertical arrow “a”) and subsequent relaxation of the photexcited carriers in the InN NWs. The vertical arrow “b” indicate the probing photon where coupling between the valence and occupied conduction band is established and thus state filling is observed. The vertical arrow “c” represents secondary excitations (PA) of the carriers by the probe pulseBack to article page