Figure 4From: First-Principles Study of the Band Gap Structure of Oxygen-Passivated Silicon NanonetsBand gap structure of silicon nanonets with the same parameters but different passivation conditionsa 110D3B4W2P13H (VBM: M or G, CBM: X, Eg: 0.96 eV),b 110D3B4W2P13OH (VBM: M, CBM: X, Eg: 0.98 eV),c 110D3B4W2P13O (VBM: G, CBM: G, Eg: 0.86 eV)Back to article page