Figure 4From: Low Temperature Growth of In2O3and InN Nanocrystals on Si(111) via Chemical Vapour Deposition Based on the Sublimation of NH4Cl in In(a) In2O3NCs as small as 200 nm were grown on Si(111) at 600 °C via the reaction of In and NH4Cl. The large pyramids have a base almost equal to 2000 nm (b) Coalescence of In2O3NCs into small flower like structures at 500 °CBack to article page