Figure 3From: Femtosecond Carrier Dynamics in In2O3NanocrystalsTime-resolved differential absorption of In2O3nanocrystals excited with 325 nm and probe at 350 nm at different fluences. The inset shows the same measurements normalized which clearly indicate the effect Auger recombination with increasing fluences. The estimated number of carriers generated at the highest fluence within a single NC was ~107Back to article page