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Table 2 Magnetic properties of the different samples measured at 4 K and 300 K

From: Continuous and Localized Mn Implantation of ZnO

 

C1

C2

M1

T(K)

4.2

300

4.2

300

4.2

300

Hc(Oe)

123

77

109

75

269

121

Mr/Ms

0.22

0.11

0.15

0.15

0.27

0.11

Ms(μB/Mn)

1.6

1.15

1.3

0.8

2.2

0.7

  1. Hcis the mean coercive field,Mris the remance field, andMsis the saturation magnetic moment.M stands for magnetization.MrandMshave been normalized to the total amount of implanted Mn atoms. Note the number of implanted atoms in M1 is different from the other cases
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