Figure 1From: Surface Localization of Buried III–V Semiconductor Nanostructures1 μm × 1 μm AFM images corresponding to: a the initial InAs QD formed into GaAs nanoholes fabricated by droplet epitaxy and b the GaAs surface that results after capping by 50 nm of GaAs the nanostructures shown in (a) at typical MBE growth conditions. Coalesced mounds elongated along the [1–10] GaAs direction are observedBack to article page